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Okano, Shuichi, Nishijima, Kouichi, Suzuki, Masakuni (1980) A Study on the Rectifying Contacts in Metal(I)/As2Se1Te2/Metal(II) Structures. Japanese Journal of Applied Physics, 19 (4) doi:10.1143/jjap.19.l193

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Reference TypeJournal (article/letter/editorial)
TitleA Study on the Rectifying Contacts in Metal(I)/As2Se1Te2/Metal(II) Structures
JournalJapanese Journal of Applied Physics
AuthorsOkano, ShuichiAuthor
Nishijima, KouichiAuthor
Suzuki, MasakuniAuthor
Year1980 (April)Volume19
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.19.l193Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984025Long-form Identifiermindat:1:5:14984025:7
GUID0
Full ReferenceOkano, Shuichi, Nishijima, Kouichi, Suzuki, Masakuni (1980) A Study on the Rectifying Contacts in Metal(I)/As2Se1Te2/Metal(II) Structures. Japanese Journal of Applied Physics, 19 (4) doi:10.1143/jjap.19.l193
Plain TextOkano, Shuichi, Nishijima, Kouichi, Suzuki, Masakuni (1980) A Study on the Rectifying Contacts in Metal(I)/As2Se1Te2/Metal(II) Structures. Japanese Journal of Applied Physics, 19 (4) doi:10.1143/jjap.19.l193
In(1980, April) Japanese Journal of Applied Physics Vol. 19 (4) Japan Society of Applied Physics

See Also

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Okano, Shuichi, Suzuki, Makoto, Suzuki, Masakuni (1981) Electrical Contact Properties of Metal-Chalcogenide Amorphous Semiconductor Systems. Japanese Journal of Applied Physics, 20 (9) 1635-1640 doi:10.1143/jjap.20.1635
Okano, Shuichi, Suzuki, Masakuni, Fukada, Noboru, Imura, Takeshi, Hiraki, Akio (1984) Diffusion Profile of Some Metal Ions in Chalcogenide Amorphous Semiconductors. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l651
Okano, Shuichi, Suzuki, Makoto, Suzuki, Masakuni (1981) Contact Effects of Metals on Chalcogenide Semiconductor Films. Japanese Journal of Applied Physics, 20 (3) 677-678 doi:10.1143/jjap.20.677
Okano, Shuichi, Suzuki, Masakuni, Imura, Takeshi, Hiraki, Akio (1985) Chalcogenide Amorphous Semiconductor Diodes. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l445
Suzuki, Masakuni, Maekawa, Toshikazu, Okano, Shuichi, Bandow, Tsutomu (1981) Effects of rf-Bias on Properties of Sputtered Silicon Films. Japanese Journal of Applied Physics, 20 (7) doi:10.1143/jjap.20.l485
Gosain, Dharam Pal, Nakamura, Minoru, Shimizu, Tomoyasu, Suzuki, Masakuni, Okano, Shuichi (1989) Nonvolatile Memory Based on Reversible Phase Transition Phenomena in Telluride Glasses. Japanese Journal of Applied Physics, 28. 1013-1018 doi:10.1143/jjap.28.1013
Okano, Shuichi, Yamakawa, Hiroshi, Suzuki, Masakuni, Hiraki, Akio (1987) Fabrication of Chalcogenide Amorphous Semiconductor Diodes Using Low Temperature Thermal Diffusion Techniques. Japanese Journal of Applied Physics, 26. 1102-1106 doi:10.1143/jjap.26.1102
Ishii, Kiyoshi, Naoe, Masahiko, Yamanaka, Shun'ichi, Okano, Shuichi, Suzuki, Masakuni (1979) Electrical Properties of Oxygenated Amorphous Si Prepared by Ion-Beam Sputtering. Japanese Journal of Applied Physics, 18 (7) 1395-1396 doi:10.1143/jjap.18.1395
Okano, Shuichi, Suzuki, Akio, Fukada, Noboru, Imura, Takeshi, Hiraki, Akio (1984) Impurity Effects in Chalcogenide Amorphous Semiconductors by Low-Temperature Diffusion of Metal Ions. Japanese Journal of Applied Physics, 23. 1320-1324 doi:10.1143/jjap.23.1320
Maeno, Masaki, Suzuki, Norio, Yamamoto, Takumi, Fujisawa, Noboru (1980) Metal Impurity Reduction by Working Gas Injection in a Tokamak. Japanese Journal of Applied Physics, 19 (8) 1509-1514 doi:10.1143/jjap.19.1509
Suzuki, Minoru, Murakami, Toshiaki, Inamura, Takahiro (1980) Superconductivity in Ba1-xSrxPb0.75Bi0.25O3. Japanese Journal of Applied Physics, 19 (2) doi:10.1143/jjap.19.l72
 
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