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Okano, Shuichi, Suzuki, Makoto, Suzuki, Masakuni (1981) Contact Effects of Metals on Chalcogenide Semiconductor Films. Japanese Journal of Applied Physics, 20 (3) 677-678 doi:10.1143/jjap.20.677

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Reference TypeJournal (article/letter/editorial)
TitleContact Effects of Metals on Chalcogenide Semiconductor Films
JournalJapanese Journal of Applied Physics
AuthorsOkano, ShuichiAuthor
Suzuki, MakotoAuthor
Suzuki, MasakuniAuthor
Year1981 (March)Volume20
Issue3
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.677Search in ResearchGate
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Mindat Ref. ID14984889Long-form Identifiermindat:1:5:14984889:5
GUID0
Full ReferenceOkano, Shuichi, Suzuki, Makoto, Suzuki, Masakuni (1981) Contact Effects of Metals on Chalcogenide Semiconductor Films. Japanese Journal of Applied Physics, 20 (3) 677-678 doi:10.1143/jjap.20.677
Plain TextOkano, Shuichi, Suzuki, Makoto, Suzuki, Masakuni (1981) Contact Effects of Metals on Chalcogenide Semiconductor Films. Japanese Journal of Applied Physics, 20 (3) 677-678 doi:10.1143/jjap.20.677
In(1981, March) Japanese Journal of Applied Physics Vol. 20 (3) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Okano, Shuichi, Suzuki, Makoto, Suzuki, Masakuni (1981) Electrical Contact Properties of Metal-Chalcogenide Amorphous Semiconductor Systems. Japanese Journal of Applied Physics, 20 (9) 1635-1640 doi:10.1143/jjap.20.1635
Okano, Shuichi, Suzuki, Masakuni, Imura, Takeshi, Hiraki, Akio (1985) Chalcogenide Amorphous Semiconductor Diodes. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l445
Suzuki, Masakuni, Maekawa, Toshikazu, Okano, Shuichi, Bandow, Tsutomu (1981) Effects of rf-Bias on Properties of Sputtered Silicon Films. Japanese Journal of Applied Physics, 20 (7) doi:10.1143/jjap.20.l485
Okano, Shuichi, Yamakawa, Hiroshi, Suzuki, Masakuni, Hiraki, Akio (1987) Fabrication of Chalcogenide Amorphous Semiconductor Diodes Using Low Temperature Thermal Diffusion Techniques. Japanese Journal of Applied Physics, 26. 1102-1106 doi:10.1143/jjap.26.1102
Okano, Shuichi, Suzuki, Masakuni, Fukada, Noboru, Imura, Takeshi, Hiraki, Akio (1984) Diffusion Profile of Some Metal Ions in Chalcogenide Amorphous Semiconductors. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l651
Okano, Shuichi, Kawachi, Ryuichi, Yamazaki, Ryoichi, Kakimoto, Yoshio, Suzuki, Masakuni (1982) Conductivity Control and Photovoltaic Effects in Chalcogenide Amorphous Semiconductor. Japanese Journal of Applied Physics, 21. 185 doi:10.7567/jjaps.21s2.185
Okano, Shuichi, Nishijima, Kouichi, Suzuki, Masakuni (1980) A Study on the Rectifying Contacts in Metal(I)/As2Se1Te2/Metal(II) Structures. Japanese Journal of Applied Physics, 19 (4) doi:10.1143/jjap.19.l193
Gosain, Dharam Pal, Nakamura, Minoru, Shimizu, Tomoyasu, Suzuki, Masakuni, Okano, Shuichi (1989) Nonvolatile Memory Based on Reversible Phase Transition Phenomena in Telluride Glasses. Japanese Journal of Applied Physics, 28. 1013-1018 doi:10.1143/jjap.28.1013
Suzuki, Masakuni, Suzuki, Makoto, Kanada, Matahiko, Kakimoto, Yoshio (1982) Thermal Stability of Pure a-Si Films Prepared by rf-Bias Sputtering. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l89
Okano, Shuichi, Suzuki, Akio, Fukada, Noboru, Imura, Takeshi, Hiraki, Akio (1984) Impurity Effects in Chalcogenide Amorphous Semiconductors by Low-Temperature Diffusion of Metal Ions. Japanese Journal of Applied Physics, 23. 1320-1324 doi:10.1143/jjap.23.1320
Ishii, Kiyoshi, Naoe, Masahiko, Yamanaka, Shun'ichi, Okano, Shuichi, Suzuki, Masakuni (1979) Electrical Properties of Oxygenated Amorphous Si Prepared by Ion-Beam Sputtering. Japanese Journal of Applied Physics, 18 (7) 1395-1396 doi:10.1143/jjap.18.1395
 
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