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Mukai, Seiji, Matsuzaki, Masatoshi, Shimada, Jun'ichi (1980) LPE Growth and Luminescence of In1-xGaxPyAs1-yon (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤Eg≤1.893 eV. Japanese Journal of Applied Physics, 19 (9) doi:10.1143/jjap.19.l505

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Reference TypeJournal (article/letter/editorial)
TitleLPE Growth and Luminescence of In1-xGaxPyAs1-yon (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤Eg≤1.893 eV
JournalJapanese Journal of Applied Physics
AuthorsMukai, SeijiAuthor
Matsuzaki, MasatoshiAuthor
Shimada, Jun'ichiAuthor
Year1980 (September)Volume19
Issue9
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.19.l505Search in ResearchGate
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Mindat Ref. ID14984308Long-form Identifiermindat:1:5:14984308:1
GUID0
Full ReferenceMukai, Seiji, Matsuzaki, Masatoshi, Shimada, Jun'ichi (1980) LPE Growth and Luminescence of In1-xGaxPyAs1-yon (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤Eg≤1.893 eV. Japanese Journal of Applied Physics, 19 (9) doi:10.1143/jjap.19.l505
Plain TextMukai, Seiji, Matsuzaki, Masatoshi, Shimada, Jun'ichi (1980) LPE Growth and Luminescence of In1-xGaxPyAs1-yon (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤Eg≤1.893 eV. Japanese Journal of Applied Physics, 19 (9) doi:10.1143/jjap.19.l505
In(1980, September) Japanese Journal of Applied Physics Vol. 19 (9) Japan Society of Applied Physics

See Also

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Mukai, Seiji, Matsuzaki, Masatoshi, Shimada, Jun'ichi (1981) LPE Growth of In1-xGaxP1-zAsz(z≦0.01) on (1 0 0) GaAs Substrates and Its Lattice Constants and Photoluminescence. Japanese Journal of Applied Physics, 20 (2) 321-327 doi:10.1143/jjap.20.321
Mukai, Seiji, Shimada, Jun'ichi (1980) LPE Growth and Luminescence of InGaAsP Lattice-Matched to (1, 0, 0) GaAs Substrates. Japanese Journal of Applied Physics, 19. 321 doi:10.7567/jjaps.19s3.321
Mukai, Seiji, Yajima, Hiroyoshi, Shimada, Jun'ichi (1981) Surface Decomposition of GaAs Substrates in LPE Growth of InGaAsP and Its Effect on Crystal Quality. Japanese Journal of Applied Physics, 20 (5) 1001-1002 doi:10.1143/jjap.20.1001
Suzuki, Akira, Kyuragi, Hakaru, Matsumura, Shigeo, Matsunami, Hiroyuki (1980) Lattice-Matched LPE Growth of In1-xGaxP1-yAsyLayers on (100) GaAs Substrates. Japanese Journal of Applied Physics, 19 (4) doi:10.1143/jjap.19.l207
Tajima, Michio, Iino, Takayuki, Ishida, Koichi (1987) Above Band-Gap Excitation Process of the 0.6 eV Luminescence Band in GaAs. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1060
Mukai, Seiji, Gonda, Shun'ichi, Shindo, Masanari, Yamashita, Tsukasa, Fujimoto, Akira (1980) An LPE Growth Method to Reduce Thermal Degradation of Substrates. Japanese Journal of Applied Physics, 19 (8) 1571-1572 doi:10.1143/jjap.19.1571
Kasai, Akinari, Ohishi, Kazuo (1980) Photoelectric Emission from KCl in the Photon Energy Region from 1.0 to 6.0 eV. Japanese Journal of Applied Physics, 19 (8) 1459-1462 doi:10.1143/jjap.19.1459
Mukai, Seiji, Yajima, Hiroyoshi, Shimada, Jun'ichi (1981) Fabrication and Visible-Light-Emission Characteristics of Room-Temperature-Operated InGaPAs DH Diode Lasers Grown on GaAs Substrates. Japanese Journal of Applied Physics, 20 (10) doi:10.1143/jjap.20.l729
Mukai, Seiji (1982) Zn, Te and Se Doping of LPE InGaPAs0.01Grown on (100) GaAs Substrates. Japanese Journal of Applied Physics, 21. 1141-1148 doi:10.1143/jjap.21.1141
Mukai, Seiji, Watanabe, Masanobu, Itoh, Hideo, Yajima, Hiroyoshi, Yano, Tomomi, Woo, Jong-Chun (1989) LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1725
Tajima, Michio (1984) Fatigue and Recovery Effects of the 0.65-eV Emission Band in GaAs. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l690
 
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