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Mukai, Seiji, Yajima, Hiroyoshi, Shimada, Jun'ichi (1981) Surface Decomposition of GaAs Substrates in LPE Growth of InGaAsP and Its Effect on Crystal Quality. Japanese Journal of Applied Physics, 20 (5) 1001-1002 doi:10.1143/jjap.20.1001

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Reference TypeJournal (article/letter/editorial)
TitleSurface Decomposition of GaAs Substrates in LPE Growth of InGaAsP and Its Effect on Crystal Quality
JournalJapanese Journal of Applied Physics
AuthorsMukai, SeijiAuthor
Yajima, HiroyoshiAuthor
Shimada, Jun'ichiAuthor
Year1981 (May)Volume20
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.1001Search in ResearchGate
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Mindat Ref. ID14984964Long-form Identifiermindat:1:5:14984964:9
GUID0
Full ReferenceMukai, Seiji, Yajima, Hiroyoshi, Shimada, Jun'ichi (1981) Surface Decomposition of GaAs Substrates in LPE Growth of InGaAsP and Its Effect on Crystal Quality. Japanese Journal of Applied Physics, 20 (5) 1001-1002 doi:10.1143/jjap.20.1001
Plain TextMukai, Seiji, Yajima, Hiroyoshi, Shimada, Jun'ichi (1981) Surface Decomposition of GaAs Substrates in LPE Growth of InGaAsP and Its Effect on Crystal Quality. Japanese Journal of Applied Physics, 20 (5) 1001-1002 doi:10.1143/jjap.20.1001
In(1981, May) Japanese Journal of Applied Physics Vol. 20 (5) Japan Society of Applied Physics

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Mukai, Seiji, Yajima, Hiroyoshi, Shimada, Jun'ichi (1981) Fabrication and Visible-Light-Emission Characteristics of Room-Temperature-Operated InGaPAs DH Diode Lasers Grown on GaAs Substrates. Japanese Journal of Applied Physics, 20 (10) doi:10.1143/jjap.20.l729
Mukai, Seiji, Matsuzaki, Masatoshi, Shimada, Jun'ichi (1981) LPE Growth of In1-xGaxP1-zAsz(z≦0.01) on (1 0 0) GaAs Substrates and Its Lattice Constants and Photoluminescence. Japanese Journal of Applied Physics, 20 (2) 321-327 doi:10.1143/jjap.20.321
Mukai, Seiji, Shimada, Jun'ichi (1980) LPE Growth and Luminescence of InGaAsP Lattice-Matched to (1, 0, 0) GaAs Substrates. Japanese Journal of Applied Physics, 19. 321 doi:10.7567/jjaps.19s3.321
Mukai, Seiji, Watanabe, Masanobu, Itoh, Hideo, Yajima, Hiroyoshi, Yano, Tomomi, Woo, Jong-Chun (1989) LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1725
Mukai, Seiji, Matsuzaki, Masatoshi, Shimada, Jun'ichi (1980) LPE Growth and Luminescence of In1-xGaxPyAs1-yon (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤Eg≤1.893 eV. Japanese Journal of Applied Physics, 19 (9) doi:10.1143/jjap.19.l505
Mukai, Seiji (1982) Zn, Te and Se Doping of LPE InGaPAs0.01Grown on (100) GaAs Substrates. Japanese Journal of Applied Physics, 21. 1141-1148 doi:10.1143/jjap.21.1141
Itoh, Hideo, Mukai, Seiji, Watanabe, Masanobu, Mori, Masahiko, Yajima, Hiroyoshi (1990) Beam Scanning Binary Logic. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1268
Mukai, Seiji, Gonda, Shun'ichi, Shindo, Masanari, Yamashita, Tsukasa, Fujimoto, Akira (1980) An LPE Growth Method to Reduce Thermal Degradation of Substrates. Japanese Journal of Applied Physics, 19 (8) 1571-1572 doi:10.1143/jjap.19.1571
Mukai, Seiji, Kaneko, Yasuyuki, Nukui, Toru, Mori, Masahiko, Watanabe, Masanobu, Itoh, Hideo, Yajima, Hiroyoshi (1989) Diffusion Properties of Mg in AlxGa1-xAs. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1
Watanabe, Masanobu, Mukai, Seiji, Itoh, Hideo, Yajima, Hiroyoshi (1990) Implementation of Optical Ternary Logic Operations Using a Twin-Stripe Laser Diode. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1536
Shindo, Masanari, Mukai, Seiji, Gonda, Shun-ichi (1977) The Effect of Doping on Interface Morphology in LPE AlxGa1-xAs. Japanese Journal of Applied Physics, 16 (8) 1485-1486 doi:10.1143/jjap.16.1485
 
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