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Okano, Haruo, Horiike, Yasuhiro (1981) Si Etch Rate and Etch Yield with Ar+/Cl2System. Japanese Journal of Applied Physics, 20 (12) 2429-2430 doi:10.1143/jjap.20.2429

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Reference TypeJournal (article/letter/editorial)
TitleSi Etch Rate and Etch Yield with Ar+/Cl2System
JournalJapanese Journal of Applied Physics
AuthorsOkano, HaruoAuthor
Horiike, YasuhiroAuthor
Year1981 (December)Volume20
Issue12
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.2429Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984767Long-form Identifiermindat:1:5:14984767:6
GUID0
Full ReferenceOkano, Haruo, Horiike, Yasuhiro (1981) Si Etch Rate and Etch Yield with Ar+/Cl2System. Japanese Journal of Applied Physics, 20 (12) 2429-2430 doi:10.1143/jjap.20.2429
Plain TextOkano, Haruo, Horiike, Yasuhiro (1981) Si Etch Rate and Etch Yield with Ar+/Cl2System. Japanese Journal of Applied Physics, 20 (12) 2429-2430 doi:10.1143/jjap.20.2429
In(1981, December) Japanese Journal of Applied Physics Vol. 20 (12) Japan Society of Applied Physics

See Also

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Horiike, Yasuhiro, Okano, Haruo, Yamazaki, Takashi, Horie, Hiromichi (1981) High-Rate Reactive Ion Etching of SiO2Using a Magnetron Discharge. Japanese Journal of Applied Physics, 20 (11) doi:10.1143/jjap.20.l817
Horiike, Yasuhiro, Sugawara, Takuji, Okano, Haruo, Shibagaki, Masahiro, Ueda, Yoshiya (1981) Cl2/Ar Plasma Etching of a Contaminated Layer on Si Induced by Fluorocarbon Gas Plasma. Japanese Journal of Applied Physics, 20 (4) 803-804 doi:10.1143/jjap.20.803
Shindo, Haruo, Hashimoto, Tetsuro, Amasaki, Fumitake, Horiike, Yasuhiro (1990) High Etch Rate Modes in Microwave Plasma Etching of Silicon in High Magnetic Fields. Japanese Journal of Applied Physics, 29. 2641-2643 doi:10.1143/jjap.29.2641
Okano, Haruo, Horiike, Yasuhiro (1982) Reactive Ion Beam Etching of SiO2and Poly-Si Employing C2F6, SiF4and BF3Gases. Japanese Journal of Applied Physics, 21. 696-701 doi:10.1143/jjap.21.696
Okano, Haruo, Horiike, Yasuhiro, Yamazaki, Takashi, Tokura, Tsunemasa (1984) Etching Characteristics of n+Poly-Si and Al Employing a Magnetron Plasma. Japanese Journal of Applied Physics, 23. 482-486 doi:10.1143/jjap.23.482
Arikado, Tsunetoshi, Horioka, Keiji, Sekine, Makoto, Okano, Haruo, Horiike, Yasuhiro (1988) Single Silicon Etching Profile Simulation. Japanese Journal of Applied Physics, 27. 95-99 doi:10.1143/jjap.27.95
Okano, Haruo, Horiike, Yasuhiro, Sekine, Makoto (1985) Photo-Excited Etching of Poly-Crystalline and Single-Crystalline Silicon in Cl2Atmosphere. Japanese Journal of Applied Physics, 24. 68-74 doi:10.1143/jjap.24.68
Sekine, Makoto, Okano, Haruo, Horiike, Yasuhiro (1986) Excimer Laser Photochemical Directional Etching of Phosphorous Doped Poly-Crystalline Silicon. Japanese Journal of Applied Physics, 25. 1944-1947 doi:10.1143/jjap.25.1944
Tsuji, Masaharu, Okano, Shinji, Tanaka, Atsushi, Nishimura, Yukio (2001) Enhancement of Etch Rate by the Addition of O2and Ar in Chemical Dry Etching of Si Using a Discharge Flow of Ar/CF4and CF4/O2Gas Mixtures. Japanese Journal of Applied Physics, 40. 2440-2446 doi:10.1143/jjap.40.2440
Fukasawa, Takayuki, Nakamura, Akihiro, Shindo, Haruo, Horiike, Yasuhiro (1994) High Rate and Highly SelectiveSiO2Etching Employing Inductively Coupled Plasma. Japanese Journal of Applied Physics, 33. 2139-2144 doi:10.1143/jjap.33.2139
Sekine, Makoto, Okano, Haruo, Yamabe, Kikuo, Hayasaka, Nobuo, Horiike, Yasuhiro (1986) Radiation Damage Evaluation in Excimer Laser Beam Irradiation and Reactive Ion Etching. Japanese Journal of Applied Physics, 25. 1111-1114 doi:10.1143/jjap.25.1111
 
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