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(1981, December) Japanese Journal of Applied Physics Vol. 20 (12) Japan Society of Applied Physics

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Reference TypeJournal (issue)
JournalJapanese Journal of Applied Physics
Year1981 (December)Volume20
Issue<   12
PublisherJapan Society of Applied Physics
Mindat Ref. ID14984739Long-form Identifiermindat:1:5:14984739:3
GUID0
Full Reference(1981, December) Japanese Journal of Applied Physics Vol. 20 (12) Japan Society of Applied Physics
Plain Text(1981, December) Japanese Journal of Applied Physics Vol. 20 (12) Japan Society of Applied Physics
In(1981) Japanese Journal of Applied Physics Vol. 20. Japan Society of Applied Physics

Contains

Gotoh, Yoshihiko, Chauvet, Agathe, Manneville, Michel, Kern, Raymond (1981) The Effect of Impurity on the Formation of the $ \sqrt{3}\times \sqrt{3}$ (R30°) Surface Phase of the Ag-Si(111) System. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l853
Munakata, Chusuke, Honma, Noriaki (1981) Non-Destructive Method for Measuring Cut-Off Frequency of a p-n Junction with a Chopped Photon Beam. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l856
Störmer, H. L. (1981) Comment on “Magnetoconductance Investigations of AlxGa1-xAs/GaAs Heterojunction FET in Strong Magnetic Fields”. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l859
Narita, Shin-ichiro, Takeyama, Shojiro, Luo, Wen Bin, Hiyamizu, Satoshi, Nanbu, Kazuo, Hashimoto, Hisao (1981) Reply to the Comment by H. L. Störmer. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l861
Hiramatsu, Tomoyasu, Minami, Yoichiro, Takayama, Satoshi, Kimata, Morihiko (1981) Energy-Band Bend Shifts at an N-Type GaAs(100) Surface Exposed to O2and Electron-Irradiated as Detected by UPS. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l863
Murakami, Kouichi, Takita, Kôki, Masuda, Kohzoh (1981) Measurement of Lattice Temperature during Pulsed-Laser Annealing by Time-Dependent Optical Reflectivity. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l867
Kondo, Katsumi, Sato, Yuzuru, Takezoe, Hideo, Fukuda, Atsuo, Kuze, Eiichi (1981) Anomalous Electric Field Dependence of Helical Pitches in Ferroelectric Sm C*at Temperatures Close to the Phase Transition to Sm A. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l871
Tanaka, Keiji, Kawakami, Nobuaki, Odajima, Akira (1981) Photoinduced Elastic Changes in Amorphous As2S3Films. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l874
Tanimoto, Mitsumori, Yaoita, Akira, Matsumoto, Yuji, Koyama, Kazuyoshi (1981) Laser Power Multiplication in a Parametric Frequency Converter with a Cavity Dumper. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l877
Moriwaki, Kazuyuki, Aritome, Hiroaki, Namba, Susumu, Karapiperis, Leonidas (1981) Fabrication of 80 nm-Wide Lines in FPM Resist by H+Beam Exposure. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l881
Otsuka, Eizo, Ohyama, Tyuzi, Fujii, Kenichi (1981) Screening of Hot Electron Energy Relaxation in a Semiconductor by Shallow Impurities. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l885
Fujita, Shigeo, Matsuda, Ken-ichi, Sasaki, Akio (1981) Cd-Doping in InxGa1-xAsyP1-yMixed Semiconductors Grown by Liquid-Phase Epitaxy. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l889
Gotoh, Hideki, Sasamoto, Kiyoshi, Kuroda, Shigeru, Yamamoto, Tohru, Tamamura, Kohshi, Fukushima, Masayuki, Kimata, Morihiko (1981) S-Doping of MBE-GaSb with H2S Gas. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l893
Horikoshi, Yoshiji, Kawashima, Minoru, Saito, Hisao (1981) Low Threshold PbSnSeTe-PbSeTe Lattice-Matched Double-Heterostructure Lasers. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l897
Koyanagi, Masao, Endo, Tadashi, Nakamura, Akira (1981) Punchthrough Effect Observed in the dcI-VCurves of a Josephson Tunnel Junction with Microwave Radiation. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l901
Mori, Hidefumi (1981) 2-D Grating Graphoepitaxy of Silicon Films from Silicon-Gold Supersaturated Solution. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l905
Irita, Yukio, Kunii, Yasuo, Takahashi, Mitsutoshi, Kajiyama, Kenji (1981) Multiple SOI Structure Fabricate by High Dose Oxygen Implantation and Epitaxial Growth. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l909
Morkoç, H., Drummond, T. J., Thorne, R. E., Kopp, W. (1981) Mobility Enhancement in Inverted AlxGa1-xAs/GaAs Modulation Doped Structures and Its Dependence on Donor-Electron Separation. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l913
Hirotsu, Shunsuke, Miyamoto, Masaaki, Yamamoto, Ikuo (1981) Elastic Softening at the Order-Disorder Phase Transition in a Plastic Crystal RbNO2. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l917
Ishii, Nobuhiko, Kumeda, Minoru, Shimizu, Tatsuo (1981) Theg-Values of Defects in Amorphous C, Si and Ge. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l920
Hasama, Toshifumi, Onishi, Yoshihiko, Uchiike, Masamitsu, Fukuda, Kuniya (1981) Extreme Ultraviolet Spectra of Emission from Plasma Focus. I. Fe Ion Lines from 70 to 210 Å. Japanese Journal of Applied Physics, 20 (12) 2269-2279 doi:10.1143/jjap.20.2269
Nakatani, Noriyuki, Hirota, Minoru (1981) Alignment of Nematic MBBA on the Cleavage Surface of Ferroelectric TGS. Japanese Journal of Applied Physics, 20 (12) 2281-2285 doi:10.1143/jjap.20.2281
Shimomura, Yoshiharu, Kitagawa, Kunihiko, Moritaki, Yoshiziro (1981) On the Important Effect of Water Vapor in the Atmosphere on Void Formation in Quenched Pure Aluminum. Japanese Journal of Applied Physics, 20 (12) 2287-2293 doi:10.1143/jjap.20.2287
Kimura, Kenji, Nannami, Michi-hiko (1981) Determination of Distribution of Misfit Dislocations in PbS/PbSe Bi-Crystals by Channelling of Energetic He Ions. Japanese Journal of Applied Physics, 20 (12) 2295-2300 doi:10.1143/jjap.20.2295
Kobayashi, Naoki, Horikoshi, Yoshiji (1981) Liquid Phase Epitaxial Growth of InAs1-x-yPxSbyon InAs Substrate. Japanese Journal of Applied Physics, 20 (12) 2301-2305 doi:10.1143/jjap.20.2301
Kikuma, Isao, Furukoshi, Mitsuo (1981) Growth and Electrical Properties of Highly-Conductive As-Grown Zinc Selenide Crystals Grown from the Melt. Japanese Journal of Applied Physics, 20 (12) 2307-2311 doi:10.1143/jjap.20.2307
Okajima, Yoshiaki (1981) Measurement of Sputtering Rate for 10 keV O2+Ions with Ion Microanalyzer. Japanese Journal of Applied Physics, 20 (12) 2313-2317 doi:10.1143/jjap.20.2313
Takai, Yoshiaki, Itoh, Tomimasa, Mizutani, Teruyoshi, Ieda, Masayuki (1981) Carrier Traps in Poly-p-Xylylene Thin Films. Japanese Journal of Applied Physics, 20 (12) 2319-2323 doi:10.1143/jjap.20.2319
Miyairi, Keiichi (1981) Influence of Water on the Electric Breakdown of Polyethylene Terephthalate Films. Japanese Journal of Applied Physics, 20 (12) 2325-2328 doi:10.1143/jjap.20.2325
Unoki, Hiromi, Oka, Kunihiko, Nakamura, Akira (1981) Measurements of Dielectric Constants in Lead Monoxide Single Crystals. Japanese Journal of Applied Physics, 20 (12) 2329-2335 doi:10.1143/jjap.20.2329
Hirata, Shoji, Akahane, Tadashi, Tako, Toshiharu (1981) Coloring Properties of Cholesteric Liquid Crystals with Large Pitch. Japanese Journal of Applied Physics, 20 (12) 2337-2341 doi:10.1143/jjap.20.2337
Schairer, W., Marshall, A. J., Gillessen, K. (1981) Long Term Stability of Zn-Diffused Green Emitting TGS Grown GaP LED's. Japanese Journal of Applied Physics, 20 (12) 2343-2346 doi:10.1143/jjap.20.2343
Inoue, Masasi, Oshima, Hisato, Yagi, Hisao, Tatsukawa, Toshiaki (1981) Effect of Isothermal Annealing on Magnetic Properties of Sn1-xCrxTe Crystals. Japanese Journal of Applied Physics, 20 (12) 2347-2349 doi:10.1143/jjap.20.2347
Seino, Shoichi (1981) Interferometric Measurement of the Diameters of Fused Quartz Spheres. Japanese Journal of Applied Physics, 20 (12) 2351-2357 doi:10.1143/jjap.20.2351
Shizukuishi, Makoto, Shimizu, Isamu, Inoue, Eiichi (1981) Application of Amorphous Silicon to WO3Photoelectrochromic Device. Japanese Journal of Applied Physics, 20 (12) 2359-2363 doi:10.1143/jjap.20.2359
Nakamura, Kenichi, Kuroiwa, Masao, Nishitani, Akito, Iwanari, Yoshiyuki (1981) Effects of Device Parameters on a Photoelectrophoretic Display System. Japanese Journal of Applied Physics, 20 (12) 2365-2372 doi:10.1143/jjap.20.2365
Minemoto, Takumi, Toda, Toshihiro (1981) Effect of Electron-Hole Recombination on the Performance of Bi12SiO20Optical Image Converter. Japanese Journal of Applied Physics, 20 (12) 2373-2381 doi:10.1143/jjap.20.2373
Huang, Zhen-Guo, Namba, Kazumi (1981) High Power Efficient Dye Laser Pumped by a Copper Vapor Laser. Japanese Journal of Applied Physics, 20 (12) 2383-2387 doi:10.1143/jjap.20.2383
Yoshida, Zensho, Kikuchi, Mitsuru, Mori, Masahiro, Miyata, Kenji, Okano, Kunihiko, Nakanishi, Masahiro, Kobata, Tadasuke, Inoue, Nobuyuki, Uchida, Taijiro (1981) Optimization Studies on the Plasma Position Control System in TORIUT-4 Tokamak. Japanese Journal of Applied Physics, 20 (12) 2389-2396 doi:10.1143/jjap.20.2389
Kubota, Yūsuke, Kodaira, Jun-ichi, Miyahara, Akira (1981) Study of the Rectangular-Like Output Waveforms of a 720 kV Coaxial Marx Generator. Japanese Journal of Applied Physics, 20 (12) 2397-2400 doi:10.1143/jjap.20.2397
Mitsuhashi, Toshiyuki (1981) An Easily-Constructed Rotating Tungsten Anode. Japanese Journal of Applied Physics, 20 (12) 2401-2402 doi:10.1143/jjap.20.2401
Sato, Katsuaki (1981) Measurement of Magneto-Optical Kerr Effect Using Piezo-Birefringent Modulator. Japanese Journal of Applied Physics, 20 (12) 2403-2409 doi:10.1143/jjap.20.2403
Oota, Akio, Kamatani, Yasuhiro, Noguchi, Seiichiro (1981) Electrical Resistivity of C-15 Compounds Zr1-xTaxV2. Japanese Journal of Applied Physics, 20 (12) 2411-2417 doi:10.1143/jjap.20.2411
Aoki, Sadao, Sakayanagi, Yoshimi (1981) A High-Brilliance Microfocus X-Ray Source with an LaB6Cathode. Japanese Journal of Applied Physics, 20 (12) 2419-2420 doi:10.1143/jjap.20.2419
Enokizono, Masato, Narita, Kenji (1981) Preparation of 6.5% Si-Fe Powder by Spark Erosion. Japanese Journal of Applied Physics, 20 (12) 2421-2422 doi:10.1143/jjap.20.2421
Ohyama, Tyuzi (1981) New Laser Emission from D2O Vapor. Japanese Journal of Applied Physics, 20 (12) 2423-2424 doi:10.1143/jjap.20.2423
Baba, Motoyoshi (1981) Observation of Saturated Absorption of Methane at 3.39 µm in Two Spatially-Separated Antiparallel Traveling Wave Beams. Japanese Journal of Applied Physics, 20 (12) 2425-2426 doi:10.1143/jjap.20.2425
Yoshida, Harumasa, Ohshita, Akinori, Tomita, Hiroshi (1981) Determination of Spatial and Temporal Coherence Functions from a Single Astigmatic Image. Japanese Journal of Applied Physics, 20 (12) 2427-2428 doi:10.1143/jjap.20.2427
Okano, Haruo, Horiike, Yasuhiro (1981) Si Etch Rate and Etch Yield with Ar+/Cl2System. Japanese Journal of Applied Physics, 20 (12) 2429-2430 doi:10.1143/jjap.20.2429
Mori, Koshiro, Kitagawa, Masatoshi, Hirao, Takashi, Ishihara, Shinichiro, Ohno, Masaharu (1981) Preparation of High-Conductivity p-Type a-Si:H Films by Penning Discharge. Japanese Journal of Applied Physics, 20 (12) 2431-2432 doi:10.1143/jjap.20.2431
Nishijima, Masayuki, Ema, Yoshinori, Hayashi, Toshiya (1981) Properties of Thin Films Prepared by Co-Evaporation of CdS and S. Japanese Journal of Applied Physics, 20 (12) 2433-2434 doi:10.1143/jjap.20.2433
Iwamura, Yasuo, Moriyama, Makoto (1981) Composition Dependence of Energy Gap of (CdTe)1-x(In2Te3)xwithx<0.02. Japanese Journal of Applied Physics, 20 (12) 2435-2436 doi:10.1143/jjap.20.2435
Isoda, Seiji, Ohara, Masayoshi, Tsuji, Masaki, Katayama, Ken-ichi (1981) A Practical Method for Correcting Astigmatism in a High-Voltage Electron Microscope. Japanese Journal of Applied Physics, 20 (12) 2437-2438 doi:10.1143/jjap.20.2437
Srivastava, J. P., Shrivastava, S. K., Srivastava, A. P. (1981) Thermally Stimulated Discharge Currents from Unpoled Iodine Doped Polyvinylacetate. Japanese Journal of Applied Physics, 20 (12) 2439 doi:10.1143/jjap.20.2439

See Also

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