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Gotoh, Hideki, Sasamoto, Kiyoshi, Kuroda, Shigeru, Yamamoto, Tohru, Tamamura, Kohshi, Fukushima, Masayuki, Kimata, Morihiko (1981) S-Doping of MBE-GaSb with H2S Gas. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l893

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Reference TypeJournal (article/letter/editorial)
TitleS-Doping of MBE-GaSb with H2S Gas
JournalJapanese Journal of Applied Physics
AuthorsGotoh, HidekiAuthor
Sasamoto, KiyoshiAuthor
Kuroda, ShigeruAuthor
Yamamoto, TohruAuthor
Tamamura, KohshiAuthor
Fukushima, MasayukiAuthor
Kimata, MorihikoAuthor
Year1981 (December)Volume20
Issue12
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.l893Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984785Long-form Identifiermindat:1:5:14984785:0
GUID0
Full ReferenceGotoh, Hideki, Sasamoto, Kiyoshi, Kuroda, Shigeru, Yamamoto, Tohru, Tamamura, Kohshi, Fukushima, Masayuki, Kimata, Morihiko (1981) S-Doping of MBE-GaSb with H2S Gas. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l893
Plain TextGotoh, Hideki, Sasamoto, Kiyoshi, Kuroda, Shigeru, Yamamoto, Tohru, Tamamura, Kohshi, Fukushima, Masayuki, Kimata, Morihiko (1981) S-Doping of MBE-GaSb with H2S Gas. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l893
In(1981, December) Japanese Journal of Applied Physics Vol. 20 (12) Japan Society of Applied Physics

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Gotoh, Hideki, Yamamoto, Tohru, Kimata, Morihiko (1982) Molecular Beam Epitaxy of In0.2Ga0.8Sb. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l767
Gotoh, Hideki, Suga, Toru, Suzuki, Hideo, Kimata, Morihiko (1981) Low Temperature Growth of Gallium Nitride. Japanese Journal of Applied Physics, 20 (7) doi:10.1143/jjap.20.l545
Hiramatsu, Tomoyasu, Kuroda, Shigeru, Goto, Hideki, Kimata, Morihiko (1980) Interface Properties of a Vacuum-Evaporated-SiOx(1∼2)/GaAs System Detected by Surface Acoustic Wave. Japanese Journal of Applied Physics, 19 (4) 757-758 doi:10.1143/jjap.19.757
Villaflor, Antonio Basanes, Yoshizawa, Masamitsu, Kimata, Morihiko (1989) Strain Accommodation in GaSb/AlSb Superlattices on (001) GaSb Substrates with AlSb Buffers. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l166
Hiramatsu, Tomoyasu, Minami, Yoichiro, Takayama, Satoshi, Kimata, Morihiko (1981) Energy-Band Bend Shifts at an N-Type GaAs(100) Surface Exposed to O2and Electron-Irradiated as Detected by UPS. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l863
Yano, Mitsuaki, Suzuki, Yukio, Ishii, Tetsuo, Matsushima, Yuichi, Kimata, Morihiko (1978) Molecular Beam Epitaxy of GaSb and GaSbxAs1-x. Japanese Journal of Applied Physics, 17 (12) 2091-2096 doi:10.1143/jjap.17.2091
Kodama, Mitsuru, Ryoji, Akira, Kimata, Morihiko (1984) Surface Cleaning of GaSb (100) Substrates for Molecular-Beam Epitaxy. Japanese Journal of Applied Physics, 23. 1657-1658 doi:10.1143/jjap.23.1657
Villaflor, Antonio Basanes, Inoue, Yuji, Kimata, Morihiko (1988) Analysis of GaSb/AlSb Strained Layers Superlattices Using Small Angle X-Ray Diffraction. Japanese Journal of Applied Physics, 27. 1580-1584 doi:10.1143/jjap.27.1580
Ishikawa, Tomonori, Yamamoto, Tohru, Kondo, Kazuo (1986) Formation of DX Centers by Heavy Si Doping in MBE-Grown AlxGa1-xAs with Low Al Content. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l484
Ito, Hiroshi, Ishibashi, Tadao (1988) Gas Source MBE Growth of GaSb. Japanese Journal of Applied Physics, 27. 1554-1555 doi:10.1143/jjap.27.1554
Yano, Mitsuaki, Nogami, Masaharu, Matsushima, Yuichi, Kimata, Morihiko (1977) Molecular Beam Epitaxial Growth of InAs. Japanese Journal of Applied Physics, 16 (12) 2131-2137 doi:10.1143/jjap.16.2131
 
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