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Kobayashi, Naoki, Horikoshi, Yoshiji (1981) Liquid Phase Epitaxial Growth of InAs1-x-yPxSbyon InAs Substrate. Japanese Journal of Applied Physics, 20 (12) 2301-2305 doi:10.1143/jjap.20.2301

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Reference TypeJournal (article/letter/editorial)
TitleLiquid Phase Epitaxial Growth of InAs1-x-yPxSbyon InAs Substrate
JournalJapanese Journal of Applied Physics
AuthorsKobayashi, NaokiAuthor
Horikoshi, YoshijiAuthor
Year1981 (December)Volume20
Issue12
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.2301Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984743Long-form Identifiermindat:1:5:14984743:0
GUID0
Full ReferenceKobayashi, Naoki, Horikoshi, Yoshiji (1981) Liquid Phase Epitaxial Growth of InAs1-x-yPxSbyon InAs Substrate. Japanese Journal of Applied Physics, 20 (12) 2301-2305 doi:10.1143/jjap.20.2301
Plain TextKobayashi, Naoki, Horikoshi, Yoshiji (1981) Liquid Phase Epitaxial Growth of InAs1-x-yPxSbyon InAs Substrate. Japanese Journal of Applied Physics, 20 (12) 2301-2305 doi:10.1143/jjap.20.2301
In(1981, December) Japanese Journal of Applied Physics Vol. 20 (12) Japan Society of Applied Physics

See Also

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Kobayashi, Naoki, Horikoshi, Yoshiji (1981) Liquid Phase Epitaxial Growth of In1-xGaxAs1-ySbywith InAs Enriched Composition on InAs Substrate. Japanese Journal of Applied Physics, 20 (11) 2253-2254 doi:10.1143/jjap.20.2253
Fukui, Takashi, Horikoshi, Yoshiji (1981) Organometallic VPE Growth of InAs1-x-ySbxPyon InAs. Japanese Journal of Applied Physics, 20 (3) 587-591 doi:10.1143/jjap.20.587
Kobayashi, Naoki, Horikoshi, Yoshiji, Uemura, Chikao (1979) Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers. Japanese Journal of Applied Physics, 18 (11) 2169-2170 doi:10.1143/jjap.18.2169
Fukui, Takashi, Horikoshi, Yoshiji (1980) Organometallic VPE Growth of InAs1-xSbxon InAs. Japanese Journal of Applied Physics, 19 (1) doi:10.1143/jjap.19.l53
Kobayashi, Naoki, Horikoshi, Yoshiji (1990) Growth of ZnSe/GaAs Superlattices by Migration-Enhanced Epitaxy. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l236
Kobayashi, Naoki, Horikoshi, Yoshiji (1982) Pseudoquaternary Phase Diagram Calculation of In1-xGaxAs1-ySbyQuaternary System. Japanese Journal of Applied Physics, 21. 201-202 doi:10.1143/jjap.21.201
Horikoshi, Yoshiji (1976) A New Liquid Phase Epitaxial Growth Method for the Growth of (AlGa)As, GaAs Multilayers. Japanese Journal of Applied Physics, 15 (5) 887-888 doi:10.1143/jjap.15.887
Kobayashi, Naoki, Horikoshi, Yoshiji (1989) Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1880
Kobayashi, Naoki, Makimoto, Toshiki, Horikoshi, Yoshiji (1985) Flow-Rate Modulation Epitaxy of GaAs. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l962
Horikoshi, Yoshiji, Saito, Hisao, Takanashi, Yoshifumi (1981) Simultaneous Diffusion of Zinc and Cadmium into InAs. Japanese Journal of Applied Physics, 20 (2) 437-438 doi:10.1143/jjap.20.437
Horikoshi, Yoshiji, Furukawa, Yoshitaka (1975) Epitaxial Growth of (AIGa)As and GaAs on (AlGa)As Substrate. Japanese Journal of Applied Physics, 14 (11) 1727-1732 doi:10.1143/jjap.14.1727
 
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