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Fukui, Takashi, Horikoshi, Yoshiji (1981) Organometallic VPE Growth of InAs1-x-ySbxPyon InAs. Japanese Journal of Applied Physics, 20 (3) 587-591 doi:10.1143/jjap.20.587

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Reference TypeJournal (article/letter/editorial)
TitleOrganometallic VPE Growth of InAs1-x-ySbxPyon InAs
JournalJapanese Journal of Applied Physics
AuthorsFukui, TakashiAuthor
Horikoshi, YoshijiAuthor
Year1981 (March)Volume20
Issue3
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.587Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984868Long-form Identifiermindat:1:5:14984868:0
GUID0
Full ReferenceFukui, Takashi, Horikoshi, Yoshiji (1981) Organometallic VPE Growth of InAs1-x-ySbxPyon InAs. Japanese Journal of Applied Physics, 20 (3) 587-591 doi:10.1143/jjap.20.587
Plain TextFukui, Takashi, Horikoshi, Yoshiji (1981) Organometallic VPE Growth of InAs1-x-ySbxPyon InAs. Japanese Journal of Applied Physics, 20 (3) 587-591 doi:10.1143/jjap.20.587
In(1981, March) Japanese Journal of Applied Physics Vol. 20 (3) Japan Society of Applied Physics

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Fukui, Takashi, Horikoshi, Yoshiji (1980) Organometallic VPE Growth of InAs1-xSbxon InAs. Japanese Journal of Applied Physics, 19 (1) doi:10.1143/jjap.19.l53
Fukui, Takashi, Horikoshi, Yoshiji (1979) Organometallic VPE Growth of InAs. Japanese Journal of Applied Physics, 18 (11) 2157-2158 doi:10.1143/jjap.18.2157
Fukui, Takashi, Horikoshi, Yoshiji (1980) InAsSbP-InAs Superlattice Grown by Organometallic VPE Method. Japanese Journal of Applied Physics, 19 (9) doi:10.1143/jjap.19.l551
Kobayashi, Naoki, Horikoshi, Yoshiji (1981) Liquid Phase Epitaxial Growth of InAs1-x-yPxSbyon InAs Substrate. Japanese Journal of Applied Physics, 20 (12) 2301-2305 doi:10.1143/jjap.20.2301
Fukui, Takashi, Horikoshi, Yoshiji (1980) Properties of InP Films Grown by Organometallic VPE Method. Japanese Journal of Applied Physics, 19 (7) doi:10.1143/jjap.19.l395
Kobayashi, Naoki, Horikoshi, Yoshiji (1981) Liquid Phase Epitaxial Growth of In1-xGaxAs1-ySbywith InAs Enriched Composition on InAs Substrate. Japanese Journal of Applied Physics, 20 (11) 2253-2254 doi:10.1143/jjap.20.2253
Horikoshi, Yoshiji, Saito, Hisao, Takanashi, Yoshifumi (1981) Simultaneous Diffusion of Zinc and Cadmium into InAs. Japanese Journal of Applied Physics, 20 (2) 437-438 doi:10.1143/jjap.20.437
Fukui, Takashi, Horikoshi, Yoshiji (1979) Optically Induced Low Photoluminescence Regions in InGaAsP. Japanese Journal of Applied Physics, 18 (1) 127-132 doi:10.1143/jjap.18.127
Fukui, Takashi, Horikoshi, Yoshiji (1979) Anomalous Luminescence near the InGaAsP–InP Heterojunction Interface. Japanese Journal of Applied Physics, 18 (5) 961-965 doi:10.1143/jjap.18.961
Kobayashi, Naoki, Fukui, Takashi, Horikoshi, Yoshiji (1982) Comparison between Atmospheric and Reduced Pressure GaAs MOCVD. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l705
Fukui, Takashi, Horikoshi, Yoshiji (1979) Field Effect of InP Photoluminescence in InP-Electrolyte Structure. Japanese Journal of Applied Physics, 18 (8) 1651-1652 doi:10.1143/jjap.18.1651
 
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