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Ando, Hiroaki, Susa, Nobuhiko, Kanbe, Hiroshi (1981) Carrier Density Profiles in Zn- and Cd-Diffused InP. Japanese Journal of Applied Physics, 20 (3) doi:10.1143/jjap.20.l197

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Reference TypeJournal (article/letter/editorial)
TitleCarrier Density Profiles in Zn- and Cd-Diffused InP
JournalJapanese Journal of Applied Physics
AuthorsAndo, HiroakiAuthor
Susa, NobuhikoAuthor
Kanbe, HiroshiAuthor
Year1981 (March)Volume20
Issue3
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.l197Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984901Long-form Identifiermindat:1:5:14984901:4
GUID0
Full ReferenceAndo, Hiroaki, Susa, Nobuhiko, Kanbe, Hiroshi (1981) Carrier Density Profiles in Zn- and Cd-Diffused InP. Japanese Journal of Applied Physics, 20 (3) doi:10.1143/jjap.20.l197
Plain TextAndo, Hiroaki, Susa, Nobuhiko, Kanbe, Hiroshi (1981) Carrier Density Profiles in Zn- and Cd-Diffused InP. Japanese Journal of Applied Physics, 20 (3) doi:10.1143/jjap.20.l197
In(1981, March) Japanese Journal of Applied Physics Vol. 20 (3) Japan Society of Applied Physics

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Kanbe, Hiroshi, Ando, Hiroaki, Yamauchi, Yoshiharu, Susa, Nobuhiko (1981) Anomalous Behavior in an InGaAs/InP Heterojunction Switching Photodiode. Japanese Journal of Applied Physics, 20 (11) doi:10.1143/jjap.20.l771
Susa, Nobuhiko, Kanbe, Hiroshi, Ando, Hiroaki, Ohmachi, Yoshiro (1980) Plasma Enhanced CVD Si3N4Film Applied to InP Avalanche Photodiodes. Japanese Journal of Applied Physics, 19 (11) doi:10.1143/jjap.19.l675
Susa, Nobuhiko, Yamauchi, Yoshiharu, Kanbe, Hiroshi (1981) Continuous Growth of High Purity InP/InGaAs on InP Substrate by Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l253
Susa, Nobuhiko, Yamauchi, Yoshiharu, Ando, Hiroaki, Kanbe, Hiroshi (1980) Vapor-Phase Epitaxial Growth of InGaAs on (100) InP Substrate. Japanese Journal of Applied Physics, 19 (1) doi:10.1143/jjap.19.l17
Ando, Hiroaki, Kanbe, Hiroshi, Ito, Masanori, Kaneda, Takao (1980) Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode. Japanese Journal of Applied Physics, 19 (6) doi:10.1143/jjap.19.l277
Susa, Nobuhiko, Yamauchi, Yoshiharu, Ando, Hiroaki, Kanbe, Hiroshi (1982) Te-doped InP and InGaAs prepared by vapor phase epitaxy for photodetectors. Journal of Crystal Growth, 58 (3). 527-533 doi:10.1016/0022-0248(82)90139-7
Ohtsuka, Ken-ichi, Yamazoe, Yoshimitsu, Nishino, Taneo, Hamakawa, Yoshihiro (1981) Photoluminescence Measurements for Cd-Diffused InP p-n Junction. Japanese Journal of Applied Physics, 20 (6) 1113-1116 doi:10.1143/jjap.20.1113
Schmitt, Felix, Susa, Nobuhiko (1983) An Etchant for InP Native Oxide. Japanese Journal of Applied Physics, 22. 761 doi:10.1143/jjap.22.761
Kanazawa, Kunihiko, Matsunami, Hiroyuki (1981) Plasma-Grown Oxide on InP. Japanese Journal of Applied Physics, 20 (3) doi:10.1143/jjap.20.l211
Ueda, Osamu, Ishikawa, Hiroshi, Umebu, Itsuo (1984) Transmission Electron Microscope Study of Defects in Cd-Diffused n-InP Substrates. Japanese Journal of Applied Physics, 23. 1551-1554 doi:10.1143/jjap.23.1551
Mikami, Osamu (1981) 1.55 µm GaInAsP/InP Distributed Feedback Lasers. Japanese Journal of Applied Physics, 20 (7) doi:10.1143/jjap.20.l488
 
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