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Susa, Nobuhiko, Yamauchi, Yoshiharu, Kanbe, Hiroshi (1981) Continuous Growth of High Purity InP/InGaAs on InP Substrate by Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l253

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Reference TypeJournal (article/letter/editorial)
TitleContinuous Growth of High Purity InP/InGaAs on InP Substrate by Vapor Phase Epitaxy
JournalJapanese Journal of Applied Physics
AuthorsSusa, NobuhikoAuthor
Yamauchi, YoshiharuAuthor
Kanbe, HiroshiAuthor
Year1981 (April)Volume20
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.l253Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984946Long-form Identifiermindat:1:5:14984946:5
GUID0
Full ReferenceSusa, Nobuhiko, Yamauchi, Yoshiharu, Kanbe, Hiroshi (1981) Continuous Growth of High Purity InP/InGaAs on InP Substrate by Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l253
Plain TextSusa, Nobuhiko, Yamauchi, Yoshiharu, Kanbe, Hiroshi (1981) Continuous Growth of High Purity InP/InGaAs on InP Substrate by Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l253
In(1981, April) Japanese Journal of Applied Physics Vol. 20 (4) Japan Society of Applied Physics

See Also

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Susa, Nobuhiko, Yamauchi, Yoshiharu, Ando, Hiroaki, Kanbe, Hiroshi (1980) Vapor-Phase Epitaxial Growth of InGaAs on (100) InP Substrate. Japanese Journal of Applied Physics, 19 (1) doi:10.1143/jjap.19.l17
Kanbe, Hiroshi, Ando, Hiroaki, Yamauchi, Yoshiharu, Susa, Nobuhiko (1981) Anomalous Behavior in an InGaAs/InP Heterojunction Switching Photodiode. Japanese Journal of Applied Physics, 20 (11) doi:10.1143/jjap.20.l771
Susa, Nobuhiko, Yamauchi, Yoshiharu, Ando, Hiroaki, Kanbe, Hiroshi (1982) Te-doped InP and InGaAs prepared by vapor phase epitaxy for photodetectors. Journal of Crystal Growth, 58 (3). 527-533 doi:10.1016/0022-0248(82)90139-7
Ando, Hiroaki, Susa, Nobuhiko, Kanbe, Hiroshi (1981) Carrier Density Profiles in Zn- and Cd-Diffused InP. Japanese Journal of Applied Physics, 20 (3) doi:10.1143/jjap.20.l197
Yamauchi, Yoshiharu, Susa, Nobuhiko, Kanbe, Hiroshi (1982) Growth of VPE InP/InGaAs on InP for photodiode application. Journal of Crystal Growth, 56 (2). 402-409 doi:10.1016/0022-0248(82)90459-6
Kanbe, Hiroshi, Yamauchi, Yoshiharu, Susa, Nobuhiko (1979) Vapor‐phase epitaxial InxGa1−xAs on (100), (111)A, and (111)B InP substrates. Applied Physics Letters, 35 (8). 603-605 doi:10.1063/1.91223
Yamauchi, Yoshiharu, Uwai, Kunihiko, Mikami, Osamu (1984) Photoluminescence of InP Doping Superlattice Grown by Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l785
Susa, Nobuhiko, Yamauchi, Yoshiharu (1981) Vapor phase epitaxial growth of InP on liquid phase epitaxial In0.53Ga0.47As. Journal of Crystal Growth, 51 (3). 518-524 doi:10.1016/0022-0248(81)90432-2
Susa, Nobuhiko, Kanbe, Hiroshi, Ando, Hiroaki, Ohmachi, Yoshiro (1980) Plasma Enhanced CVD Si3N4Film Applied to InP Avalanche Photodiodes. Japanese Journal of Applied Physics, 19 (11) doi:10.1143/jjap.19.l675
Yamauchi, Yoshiharu (1981) Suppression of Thermal Damage in InP Substrates in InGaAs Vapor Phase Epitaxy. Journal of the Electrochemical Society, 128. 210pp. doi:10.1149/1.2127373
Uwai, Kunihiko, Susa, Nobuhiko, Mikami, Osamu, Fukui, Takashi (1984) Effects of Substrate Temperatures and V/III Ratios on Epitaxial InP Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l121
 
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