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Mizuo, Shoichi, Higuchi, Hisayuki (1981) Anomalous Phosphorus Diffusion in Si Directly Masked with Si3N4Films. Japanese Journal of Applied Physics, 20 (4) 791-792 doi:10.1143/jjap.20.791

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Reference TypeJournal (article/letter/editorial)
TitleAnomalous Phosphorus Diffusion in Si Directly Masked with Si3N4Films
JournalJapanese Journal of Applied Physics
AuthorsMizuo, ShoichiAuthor
Higuchi, HisayukiAuthor
Year1981 (April)Volume20
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.791Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984937Long-form Identifiermindat:1:5:14984937:3
GUID0
Full ReferenceMizuo, Shoichi, Higuchi, Hisayuki (1981) Anomalous Phosphorus Diffusion in Si Directly Masked with Si3N4Films. Japanese Journal of Applied Physics, 20 (4) 791-792 doi:10.1143/jjap.20.791
Plain TextMizuo, Shoichi, Higuchi, Hisayuki (1981) Anomalous Phosphorus Diffusion in Si Directly Masked with Si3N4Films. Japanese Journal of Applied Physics, 20 (4) 791-792 doi:10.1143/jjap.20.791
In(1981, April) Japanese Journal of Applied Physics Vol. 20 (4) Japan Society of Applied Physics

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Mizuo, Shoichi, Higuchi, Hisayuki (1981) Suppression by Pre-Diffusion Annealing of Anomalous Diffusion of B and P in Si Directly Masked with Si3N4Films. Japanese Journal of Applied Physics, 20 (9) 1749-1750 doi:10.1143/jjap.20.1749
Mizuo, Shoichi, Higuchi, Hisayuki (1982) Anomalous Diffusion of B and P in Si Directly Masked with Si3N4. Japanese Journal of Applied Physics, 21. 281-286 doi:10.1143/jjap.21.281
Mizuo, Shoichi, Higuchi, Hisayuki (1981) Retardation of Sb Diffusion in Si during Thermal Oxidation. Japanese Journal of Applied Physics, 20 (4) 739-744 doi:10.1143/jjap.20.739
Mizuo, Shoichi, Higuchi, Hisayuki (1982) Effects of Oxidation on Aluminum Diffusion in Silicon. Japanese Journal of Applied Physics, 21. 56-60 doi:10.1143/jjap.21.56
Mizuo, Shoichi, Higuchi, Hisayuki (1982) The Range of Diffusion Enhancement of B and P in Si during Thermal Oxidation. Japanese Journal of Applied Physics, 21. 272-275 doi:10.1143/jjap.21.272
Mizuo, Shoichi, Higuchi, Hisayuki (1983) Preservation of Point Defect Distribution in FZ Silicon. Japanese Journal of Applied Physics, 22. 12-16 doi:10.1143/jjap.22.12
Mizuo, Shoichi, Higuchi, Hisayuki (1982) Effects of Backside Oxidation on the Size of Oxidation Induced Stacking Faults at the Front Surface of FZ Si Wafers. Japanese Journal of Applied Physics, 21. 1547-1553 doi:10.1143/jjap.21.1547
Mizuo, Shoichi (1982) Effect of Back-Side Oxidation on B and P Diffusion in Si Directly Masked with Si[sub 3]N[sub 4] Films. Journal of the Electrochemical Society, 129. 2292pp. doi:10.1149/1.2123496
Mizuo, Shoichi, Kusaka, Takahisa, Shintani, Akira, Nanba, Mitsuo, Higuchi, Hisayuki (1983) Effect of Si and SiO2thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si. Journal of Applied Physics, 54 (7). 3860-3866 doi:10.1063/1.332611
Higuchi, Masaaki, Aratani, Takashi, Hamada, Tatsufumi, Shinagawa, Seiji, Nohira, Hiroshi, Ikenaga, Eiji, Teramoto, Akinobu, Hattori, Takeo, Sugawa, Shigetoshi, Ohmi, Tadahiro (2007) Electric Characteristics of Si3N4Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces. Japanese Journal of Applied Physics, 46 (4) 1895-1898 doi:10.1143/jjap.46.1895
MIZUO, S., HIGUCHI, H. (1983) ChemInform Abstract: EFFECT OF BACK-SIDE OXIDATION ON BORON AND PHOSPHORUS DIFFUSION IN SILICON DIRECTLY MASKED WITH SILICON NITRIDE (SI3N4) FILMS. Chemischer Informationsdienst, 14 (6) doi:10.1002/chin.198306010
 
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