Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Hiyamizu, Satoshi, Mimura, Takashi, Fujii, Toshio, Nanbu, Kazuo, Hashimoto, Hisao (1981) Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l245

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleExtremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
JournalJapanese Journal of Applied Physics
AuthorsHiyamizu, SatoshiAuthor
Mimura, TakashiAuthor
Fujii, ToshioAuthor
Nanbu, KazuoAuthor
Hashimoto, HisaoAuthor
Year1981 (April)Volume20
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.l245Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984944Long-form Identifiermindat:1:5:14984944:1
GUID0
Full ReferenceHiyamizu, Satoshi, Mimura, Takashi, Fujii, Toshio, Nanbu, Kazuo, Hashimoto, Hisao (1981) Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l245
Plain TextHiyamizu, Satoshi, Mimura, Takashi, Fujii, Toshio, Nanbu, Kazuo, Hashimoto, Hisao (1981) Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l245
In(1981, April) Japanese Journal of Applied Physics Vol. 20 (4) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Hiyamizu, Satoshi, Nanbu, Kazuo, Mimura, Takashi, Fujii, Toshio, Hashimoto, Hisao (1981) Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures. Japanese Journal of Applied Physics, 20 (5) doi:10.1143/jjap.20.l378
Hiyamizu, Satoshi, Fujii, Toshio, Mimura, Takashi, Nanbu, Kazuo, Saito, Junji, Hashimoto, Hisao (1981) The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE. Japanese Journal of Applied Physics, 20 (6) doi:10.1143/jjap.20.l455
Ishikawa, Tomonori, Hiyamizu, Satoshi, Mimura, Takashi, Saito, Junji, Hashimoto, Hisao (1981) The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE. Japanese Journal of Applied Physics, 20 (11) doi:10.1143/jjap.20.l814
Hiyamizu, Satoshi, Saito, Junji, Nanbu, Kazuo, Ishikawa, Tomonori (1983) Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l609
Mimura, Takashi, Hiyamizu, Satoshi, Fujii, Toshio, Nanbu, Kazuo (1980) A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions. Japanese Journal of Applied Physics, 19 (5) doi:10.1143/jjap.19.l225
Narita, Shin-ichiro, Takeyama, Shojiro, Luo, Wen Bin, Hiyamizu, Satoshi, Nanbu, Kazuo, Hashimoto, Hisao (1981) Galvanomagnetic Study of 2-Dimensional Electron Gas in AlxGa1-xAs/GaAs Heterojunction FET. Japanese Journal of Applied Physics, 20 (6) doi:10.1143/jjap.20.l443
Sasa, Shigehiko, Saito, Junji, Nanbu, Kazuo, Ishikawa, Tomonori, Hiyamizu, Satoshi, Inoue, Masataka (1985) Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l281
Sasa, Shigehiko, Saito, Junji, Nanbu, Kazuo, Ishikawa, Tomonori, Hiyamizu, Satoshi (1984) Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l573
Nakata, Yoshiaki, Sasa, Shigehiko, Sugiyama, Yoshihiro, Fujii, Toshio, Hiyamizu, Satoshi (1987) Extremely High 2DEG Concentration in Selectively Doped In0.53Ga0.47As/N-In0.52Al0.48As Heterostructures Grown by MBE. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l59
Narita, Shin-ichiro, Takeyama, Shojiro, Luo, Wen Bin, Hiyamizu, Satoshi, Nanbu, Kazuo, Hashimoto, Hisao (1981) Magnetoconductance Investigations of AlxGa1-xAs/GaAs Heterojunction FET in Strong Magnetic Fields. Japanese Journal of Applied Physics, 20 (6) doi:10.1143/jjap.20.l447
Saito, Junji, Nanbu, Kazuo, Ishikawa, Tomonori, Hiyamizu, Satoshi (1983) Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlxGa1-xAs Heterostructure on the AlAs Mole Fraction. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l79
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 23, 2025 17:53:59
Go to top of page