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Yamazaki, Ken-ichi, Yamada, Masayoshi, Yamamoto, Keiichi, Abe, Kenji (1981) Anomalous Residual-Stress in Pulsed-Laser-Annealed Silicon-on-Sapphire Revealed by Raman Scattering. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l299

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Reference TypeJournal (article/letter/editorial)
TitleAnomalous Residual-Stress in Pulsed-Laser-Annealed Silicon-on-Sapphire Revealed by Raman Scattering
JournalJapanese Journal of Applied Physics
AuthorsYamazaki, Ken-ichiAuthor
Yamada, MasayoshiAuthor
Yamamoto, KeiichiAuthor
Abe, KenjiAuthor
Year1981 (April)Volume20
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.l299Search in ResearchGate
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Mindat Ref. ID14984959Long-form Identifiermindat:1:5:14984959:5
GUID0
Full ReferenceYamazaki, Ken-ichi, Yamada, Masayoshi, Yamamoto, Keiichi, Abe, Kenji (1981) Anomalous Residual-Stress in Pulsed-Laser-Annealed Silicon-on-Sapphire Revealed by Raman Scattering. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l299
Plain TextYamazaki, Ken-ichi, Yamada, Masayoshi, Yamamoto, Keiichi, Abe, Kenji (1981) Anomalous Residual-Stress in Pulsed-Laser-Annealed Silicon-on-Sapphire Revealed by Raman Scattering. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l299
In(1981, April) Japanese Journal of Applied Physics Vol. 20 (4) Japan Society of Applied Physics

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Yamazaki, Ken-ichi, Yamada, Masayoshi, Yamamoto, Keiichi, Abe, Kenji (1981) Relief of Residual Strain in Silicon-on-Sapphire by Heat-Assisted Pulsed-Laser Annealing. Japanese Journal of Applied Physics, 20 (5) doi:10.1143/jjap.20.l371
Yamazaki, Ken-ichi, Yamada, Masayoshi, Yamamoto, Keiichi, Abe, Kenji (1984) Raman Scattering Characterization of Residual Stresses in Silicon-on-Sapphire. Japanese Journal of Applied Physics, 23. 681-686 doi:10.1143/jjap.23.681
Yamazaki, Ken-ichi, Uotani, Ricardo Katsumi, Nambu, Katsumi, Yamada, Masayoshi, Yamamoto, Keiichi, Abe, Kenji (1984) Raman Microprobe Study on Relaxation of Residual Stresses in Patterned Silicon-on-Sapphire. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l403
Yamada, Masayoshi, Hara, Shuichi, Yamamoto, Keiichi, Abe, Kenji (1980) Crystallization of Amorphous Silicon Layers RF-Sputtered on Sapphire by CW Ion Laser Annealing. Japanese Journal of Applied Physics, 19 (5) doi:10.1143/jjap.19.l261
Yamada, Masayoshi, Kotani, Hisakazu, Yamamoto, Keiichi, Abe, Kenji (1981) Nonlinear transmission of intense laser pulse in silicon-on-sapphire. Physics Letters A, 85. 191-194 doi:10.1016/0375-9601(81)90901-4
Shimizu, Haruo, Yamada, Masayoshi, Maegawa, Shigeto, Yamamoto, Keiichi, Abe, Kenji (1981) Brillouin Scattering in Layered Semiconductors using Microprocessor-controlled Fabry-Perot Interferometer. Japanese Journal of Applied Physics, 20. 255 doi:10.7567/jjaps.20s3.255
Yamada, Masayoshi, Ariyoshi, Hiroshi, Yamamoto, Keiichi, Abe, Kenji (1983) Laser-Oscillating-Mode Dependence of Temperature Distributions in Laser Annealing of Semiconductors. Japanese Journal of Applied Physics, 22. 1546-1552 doi:10.1143/jjap.22.1546
Yamada, Masayoshi, Yamazoe, Yoshimitsu, Yamamoto, Keiichi, Abe, Kenji (1979) Transverse Electric Current Effect on Surface Acoustic Wave Propagation on Photoconductive CdS. Japanese Journal of Applied Physics, 18 (2) 417-418 doi:10.1143/jjap.18.417
Yamada, Masayoshi, Ueda, Satoshi, Yamamoto, Keiichi, Abe, Kenji (1980) Coexistence of Surface and Bulk Acoustic Waves in Acoustoelectric Domains in Semiconducting CdS. Japanese Journal of Applied Physics, 19 (1) doi:10.1143/jjap.19.l13
Yamada, Masayoshi, Nambu, Katsumi, Itoh, Yutaka, Yamamoto, Keiichi (1986) Raman microprobe study on temperature distribution during cw laser heating of silicon on sapphire. Journal of Applied Physics, 59 (4). 1350-1354 doi:10.1063/1.336529
Tajima, Michio, Nomura, Masayoshi (1981) Photoluminescence Analysis of Impurities in Epitaxial Silicon Crystals. Japanese Journal of Applied Physics, 20 (10) doi:10.1143/jjap.20.l697
 
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