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Takahei, Kenichiro, Nagai, Haruo (1981) Instability of In-Ga-As-P Liquid Solution during Low Temperature LPE of In1-xGaxAs1-yPyon InP. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l313

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Reference TypeJournal (article/letter/editorial)
TitleInstability of In-Ga-As-P Liquid Solution during Low Temperature LPE of In1-xGaxAs1-yPyon InP
JournalJapanese Journal of Applied Physics
AuthorsTakahei, KenichiroAuthor
Nagai, HaruoAuthor
Year1981 (April)Volume20
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.l313Search in ResearchGate
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Mindat Ref. ID14984963Long-form Identifiermindat:1:5:14984963:2
GUID0
Full ReferenceTakahei, Kenichiro, Nagai, Haruo (1981) Instability of In-Ga-As-P Liquid Solution during Low Temperature LPE of In1-xGaxAs1-yPyon InP. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l313
Plain TextTakahei, Kenichiro, Nagai, Haruo (1981) Instability of In-Ga-As-P Liquid Solution during Low Temperature LPE of In1-xGaxAs1-yPyon InP. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l313
In(1981, April) Japanese Journal of Applied Physics Vol. 20 (4) Japan Society of Applied Physics

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Nakano, Yoshinori, Takahei, Kenichiro, Noguchi, Yoshio, Nagai, Haruo, Nawata, Kiyoshi (1981) Abnormality at the Interface of p-Type InP Grown by LPE. Japanese Journal of Applied Physics, 20 (8) doi:10.1143/jjap.20.l619
Amano, Toshimasa, Takahei, Ken-ichiro, Nagai, Haruo (1981) Effect of Baking Temperature on Purity of LPE Ga0.47In0.53As. Japanese Journal of Applied Physics, 20 (11) 2105-2109 doi:10.1143/jjap.20.2105
Suzuki, Yoshio, Noguchi, Yoshio, Takahei, Kenichiro, Nagai, Haruo, Iwane, Genzo (1981) 1.5 µm Region BH Laser Array. Japanese Journal of Applied Physics, 20 (3) doi:10.1143/jjap.20.l229
Fujii, Sadao, Sakai, Shiro, Umeno, Masayoshi (1986) LPE Growth of In1-xGaxAs1-yPyon GaAs0.7P0.3. Japanese Journal of Applied Physics, 25. 75-78 doi:10.1143/jjap.25.75
Noguchi, Yoshio, Takahei, Kenichiro, Suzuki, Yoshio, Nagai, Haruo (1980) Low Threshold Current CW Operation of InP/GaInAs Buried Heterostrueture Lasers. Japanese Journal of Applied Physics, 19 (12) doi:10.1143/jjap.19.l759
Nagai, Haruo, Noguchi, Yoshio, Takahei, Kenichiro, Toyoshima, Yoshio, Iwane, Genzo (1980) InP/GaInAsP Buried Heterostructure Lasers of 1.5 µm Region. Japanese Journal of Applied Physics, 19 (4) doi:10.1143/jjap.19.l218
Nagai, Haruo (1981) Dislocation Velocities in Indium Phosphide. Japanese Journal of Applied Physics, 20 (4) 793-794 doi:10.1143/jjap.20.793
Kobayashi, Naoki, Horikoshi, Yoshiji (1981) Liquid Phase Epitaxial Growth of In1-xGaxAs1-ySbywith InAs Enriched Composition on InAs Substrate. Japanese Journal of Applied Physics, 20 (11) 2253-2254 doi:10.1143/jjap.20.2253
Nagai, Haruo (1981) (Invited) LPE and Characteristics of GaInAsP/InP 1.5 µm Region Laser Diodes. Japanese Journal of Applied Physics, 20. 183 doi:10.7567/jjaps.20s1.183
Nagai, Haruo, Noguchi, Yoshio, Suzuki, Yoshio, Takahei, Ken-ichiro (1982) InGaAsP/InP Dual-Wavelength BH Laser. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l173
Kondo, Susumu, Amano, Toshimasa, Nagai, Haruo (1987) High-Purity LPE Growth of InP by Co Addition to an In–P Melt. Japanese Journal of Applied Physics, 26. 1997-2001 doi:10.1143/jjap.26.1997
 
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