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Fujita, Shizuo, Nishihara, Michinori, Hoi, Won-Lon, Sasaki, Akio (1981) Deep Trap States in Si3N4Layer on Si Substrate. Japanese Journal of Applied Physics, 20 (5) 917-923 doi:10.1143/jjap.20.917

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Reference TypeJournal (article/letter/editorial)
TitleDeep Trap States in Si3N4Layer on Si Substrate
JournalJapanese Journal of Applied Physics
AuthorsFujita, ShizuoAuthor
Nishihara, MichinoriAuthor
Hoi, Won-LonAuthor
Sasaki, AkioAuthor
Year1981 (May)Volume20
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.917Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984985Long-form Identifiermindat:1:5:14984985:4
GUID0
Full ReferenceFujita, Shizuo, Nishihara, Michinori, Hoi, Won-Lon, Sasaki, Akio (1981) Deep Trap States in Si3N4Layer on Si Substrate. Japanese Journal of Applied Physics, 20 (5) 917-923 doi:10.1143/jjap.20.917
Plain TextFujita, Shizuo, Nishihara, Michinori, Hoi, Won-Lon, Sasaki, Akio (1981) Deep Trap States in Si3N4Layer on Si Substrate. Japanese Journal of Applied Physics, 20 (5) 917-923 doi:10.1143/jjap.20.917
In(1981, May) Japanese Journal of Applied Physics Vol. 20 (5) Japan Society of Applied Physics

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Nishihara, Michinori, Fujita, Shizuo, Sasaki, Akio (1981) Temperature Dependence of Charge Transfer in Metal-Nitride-Semiconductor Diode Structure. Japanese Journal of Applied Physics, 20 (10) 1975-1976 doi:10.1143/jjap.20.1975
Sasaki, Goro, Kondo, Makoto, Fujita, Shizuo, Sasaki, Akio (1982) Properties of Chemically Vapor-Deposited Amorphous SiNxAlloys. Japanese Journal of Applied Physics, 21. 1394-1399 doi:10.1143/jjap.21.1394
Sasaki, Goro, Kondo, Makoto, Fujita, Shizuo, Sasaki, Akio (1982) Effects of Nitrogen Incorporation on Gap-State Density in Chemically Vapor-Deposited Amorphous Silicon. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l377
Fujita, Shizuo, Toyoshima, Hideo, Ohishi, Toshiyuki, Sasaki, Akio (1984) Plasma-Enhanced Chemical Vapor Deposition of Fluorinated Silicon Nitride. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l144
Fujita, Shizuo, Toyoshima, Hideo, Ohishi, Toshiyuki, Sasaki, Akio (1984) Plasma-Deposited Silicon Nitride Films from SiF2as Silicon Source. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l268
Fujita, Shigeo, Matsuda, Ken-ichi, Sasaki, Akio (1981) Cd-Doping in InxGa1-xAsyP1-yMixed Semiconductors Grown by Liquid-Phase Epitaxy. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l889
Fujita, Shizuo, Zhou, Nan-Sheng, Sasaki, Akio (1983) Composition and Chemical Bonds in Silicon Nitride by SiH4-N2Gas Mixture Plasma CVD. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l100
Sasaki, Akio, Kuzuhara, Masaaki (1981) InGaAsP-InP Heterojunction Phototransistors and Light Amplifiers. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l283
Fujita, Shizuo, Uemoto, Yasuhiro, Araki, Soichiro, Imaizumi, Masayuki, Takeda, Yoshikazu, Sasaki, Akio (1988) Organometallic Vapor-Phase Epitaxy of GaAs Using Triethylarsenic as Arsenic Source. Japanese Journal of Applied Physics, 27. 1151-1155 doi:10.1143/jjap.27.1151
Kasu, Makoto, Fujita, Shizuo, Sasaki, Akio (1989) Observation and characterization of deep donor centers (DXcenters) in Si‐doped AlAs. Journal of Applied Physics, 66 (7). 3042-3046 doi:10.1063/1.344482
Takeda, Yoshikazu, Kuzuhara, Masaaki, Sasaki, Akio (1980) Properties of Zn-Doped P-Type In0.53Ga0.47As on InP Substrate. Japanese Journal of Applied Physics, 19 (5) 899-903 doi:10.1143/jjap.19.899
 
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