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Sasaki, Akio, Kuzuhara, Masaaki (1981) InGaAsP-InP Heterojunction Phototransistors and Light Amplifiers. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l283

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Reference TypeJournal (article/letter/editorial)
TitleInGaAsP-InP Heterojunction Phototransistors and Light Amplifiers
JournalJapanese Journal of Applied Physics
AuthorsSasaki, AkioAuthor
Kuzuhara, MasaakiAuthor
Year1981 (April)Volume20
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.l283Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984954Long-form Identifiermindat:1:5:14984954:0
GUID0
Full ReferenceSasaki, Akio, Kuzuhara, Masaaki (1981) InGaAsP-InP Heterojunction Phototransistors and Light Amplifiers. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l283
Plain TextSasaki, Akio, Kuzuhara, Masaaki (1981) InGaAsP-InP Heterojunction Phototransistors and Light Amplifiers. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l283
In(1981, April) Japanese Journal of Applied Physics Vol. 20 (4) Japan Society of Applied Physics

See Also

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Takeda, Yoshikazu, Kuzuhara, Masaaki, Sasaki, Akio (1980) Properties of Zn-Doped P-Type In0.53Ga0.47As on InP Substrate. Japanese Journal of Applied Physics, 19 (5) 899-903 doi:10.1143/jjap.19.899
Fukuda, Mitsuo, Wakita, Koichi, Iwane, Genzo (1981) Self-Sustained Pulsation Appearance in InGaAsP/InP DH Lasers during Accelerated Operation. Japanese Journal of Applied Physics, 20 (2) doi:10.1143/jjap.20.l153
Zhu, Yu, Noda, Susumu, Takeda, Yoshikazu, Sasaki, Akio (1992) AlxGa1-xAs Heterojunction Phototransistors Responding to Entire Visible Wavelength Region. Japanese Journal of Applied Physics, 31. 2382-2387 doi:10.1143/jjap.31.2382
Fukuda, Mitsuo, Wakita, Koichi, Iwane, Genzo (1981) Observation of Dark Defects Related to Degradation in InGaAsP/InP DH Lasers under Accelerated Operation. Japanese Journal of Applied Physics, 20 (2) doi:10.1143/jjap.20.l87
Kanbe, Hiroshi, Ando, Hiroaki, Yamauchi, Yoshiharu, Susa, Nobuhiko (1981) Anomalous Behavior in an InGaAs/InP Heterojunction Switching Photodiode. Japanese Journal of Applied Physics, 20 (11) doi:10.1143/jjap.20.l771
Takanashi, Yoshifumi, Horikoshi, Yoshiji (1981) Temperature Dependence of Ionization Coefficients for InP and 1.3 µm InGaAsP Avalanche Photodiodes. Japanese Journal of Applied Physics, 20 (10) 1907-1913 doi:10.1143/jjap.20.1907
Suemune, Ikuo, Yamanishi, Masamichi, Mikoshiba, Nobuo (1981) Investigation of 1.3- µm InGaAsP/InP Lasers by the Measurement of Current-Injection-Induced Acoustic (CIA) Signals. Japanese Journal of Applied Physics, 20 (9) doi:10.1143/jjap.20.l631
Fujita, Shigeo, Matsuda, Ken-ichi, Sasaki, Akio (1981) Cd-Doping in InxGa1-xAsyP1-yMixed Semiconductors Grown by Liquid-Phase Epitaxy. Japanese Journal of Applied Physics, 20 (12) doi:10.1143/jjap.20.l889
Kobayashi, Masahiro, Sakai, Shiro, Umeno, Masayoshi (1983) Very Low Dark Current P-p-P Base InGaAsP/InP Phototransistors. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l159
Kanazawa, Kunihiko, Matsunami, Hiroyuki (1981) Plasma-Grown Oxide on InP. Japanese Journal of Applied Physics, 20 (3) doi:10.1143/jjap.20.l211
Mikami, Osamu (1981) 1.55 µm GaInAsP/InP Distributed Feedback Lasers. Japanese Journal of Applied Physics, 20 (7) doi:10.1143/jjap.20.l488
 
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