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Zhu, Yu, Noda, Susumu, Takeda, Yoshikazu, Sasaki, Akio (1992) AlxGa1-xAs Heterojunction Phototransistors Responding to Entire Visible Wavelength Region. Japanese Journal of Applied Physics, 31. 2382-2387 doi:10.1143/jjap.31.2382

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Reference TypeJournal (article/letter/editorial)
TitleAlxGa1-xAs Heterojunction Phototransistors Responding to Entire Visible Wavelength Region
JournalJapanese Journal of Applied Physics
AuthorsZhu, YuAuthor
Noda, SusumuAuthor
Takeda, YoshikazuAuthor
Sasaki, AkioAuthor
Year1992 (August 15)Volume31
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.31.2382Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14997675Long-form Identifiermindat:1:5:14997675:8
GUID0
Full ReferenceZhu, Yu, Noda, Susumu, Takeda, Yoshikazu, Sasaki, Akio (1992) AlxGa1-xAs Heterojunction Phototransistors Responding to Entire Visible Wavelength Region. Japanese Journal of Applied Physics, 31. 2382-2387 doi:10.1143/jjap.31.2382
Plain TextZhu, Yu, Noda, Susumu, Takeda, Yoshikazu, Sasaki, Akio (1992) AlxGa1-xAs Heterojunction Phototransistors Responding to Entire Visible Wavelength Region. Japanese Journal of Applied Physics, 31. 2382-2387 doi:10.1143/jjap.31.2382
In(1992) Japanese Journal of Applied Physics Vol. 31. Japan Society of Applied Physics

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Kasu, Makoto, Yamamoto, Teiji, Noda, Susumu, Sasaki, Akio (1990) Photoluminescent Properties of AlAs/AlxGa1-xAs (x=0.5) Disordered Superlattices. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1055
Takeda, Yoshikazu, Gong, Xiao Cheng, Zhu, Yu, Sasaki, Akio (1987) Determination of Al Composition and DLTS Measurements of AlxGa1-xSb on GaSb Substrate. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l273
Noda, Susumu, Yamamoto, Noritsugu, Sasaki, Akio (1996) New Realization Method for Three-Dimensional Photonic Crystal in Optical Wavelength Region. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l909
Takeda, Yoshikazu, Araki, Soichiro, Noda, Susumu, Sasaki, Akio (1990) Characterization of InP Grown by OMVPE Using Tertiary-butylphosphine for the Phosphorous Source. Japanese Journal of Applied Physics, 29. 11-18 doi:10.1143/jjap.29.11
Takeda, Yoshikazu, Araki, Soichiro, Takemi, Masayoshi, Noda, Susumu, Sasaki, Akio (1990) OMVPE Growth and Characterization of GaInP on GaAs Using Tertiary Butylphosphine for the Phosphorous Source. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1040
Yamamoto, Noritsugu, Noda, Susumu, Sasaki, Akio (1997) New Realization Method for Three-Dimensional Photonic Crystal in the Optical Wavelength Region: Experimental Consideration. Japanese Journal of Applied Physics, 36. 1907-1911 doi:10.1143/jjap.36.1907
Sasaki, Akio, Kuzuhara, Masaaki (1981) InGaAsP-InP Heterojunction Phototransistors and Light Amplifiers. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l283
Asano, Takashi, Noda, Susumu, Sasaki, Akio (1998) Enhancement of Absorption Magnitude of Short-Wavelength Intersubband Transition in InGaAs/AlAs Quantum Wells. Japanese Journal of Applied Physics, 37. 2510-2515 doi:10.1143/jjap.37.2510
Takeda, Yoshikazu, Takigawa, Shin-ichi, Kondo, Makoto, Sasaki, Akio (1984) Fabrication of 1-µm Wavelength Region Ag/p-InP/p-InGaAs Schottky Photodiodes by LPE and Selective Etching. Japanese Journal of Applied Physics, 23. 84-86 doi:10.1143/jjap.23.84
Takeda, Yoshikazu, Sasaki, Akio (1980) Hall Mobility and Hall Factor of In0.53Ga0.47As. Japanese Journal of Applied Physics, 19 (2) 383-384 doi:10.1143/jjap.19.383
Kasu, Makoto, Yamamoto, Teiji, Noda, Susumu, Sasaki, Akio (1990) Electroluminescence of AlAs/GaAs Disordered Superlattices. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1588
 
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