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Miyazaki, Tomoyuki, Hideshima, Osamu, Ohta, Toshihiko (1981) Differential Capacitance of the Schottky Barrier on a Semiconducting Ferroelectric and Related Materials. Japanese Journal of Applied Physics, 20 (5) 925-929 doi:10.1143/jjap.20.925

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Reference TypeJournal (article/letter/editorial)
TitleDifferential Capacitance of the Schottky Barrier on a Semiconducting Ferroelectric and Related Materials
JournalJapanese Journal of Applied Physics
AuthorsMiyazaki, TomoyukiAuthor
Hideshima, OsamuAuthor
Ohta, ToshihikoAuthor
Year1981 (May)Volume20
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.925Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984986Long-form Identifiermindat:1:5:14984986:1
GUID0
Full ReferenceMiyazaki, Tomoyuki, Hideshima, Osamu, Ohta, Toshihiko (1981) Differential Capacitance of the Schottky Barrier on a Semiconducting Ferroelectric and Related Materials. Japanese Journal of Applied Physics, 20 (5) 925-929 doi:10.1143/jjap.20.925
Plain TextMiyazaki, Tomoyuki, Hideshima, Osamu, Ohta, Toshihiko (1981) Differential Capacitance of the Schottky Barrier on a Semiconducting Ferroelectric and Related Materials. Japanese Journal of Applied Physics, 20 (5) 925-929 doi:10.1143/jjap.20.925
In(1981, May) Japanese Journal of Applied Physics Vol. 20 (5) Japan Society of Applied Physics

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Miyazaki, Tomoyuki, Hideshima, Osamu (1981) Anomalous Differential Capacitance of the Schottky Barrier on a Semiconductor with Electric-Field-Dependent Dielectric Constant. Japanese Journal of Applied Physics, 20 (5) 931-934 doi:10.1143/jjap.20.931
Furukawa, Yoshitaka, Ishibashi, Yoshio (1967) Transient Phenomena in Capacitance and Reverse Current in a GaAs Schottky Barrier Diode. Japanese Journal of Applied Physics, 6 (1) 13-20 doi:10.1143/jjap.6.13
Furukawa, Yoshitaka, Ishibashi, Yoshio (1966) Transient Phenomena in the Capacitance of GaAs Schottky Barrier Diodes. Japanese Journal of Applied Physics, 5 (9) 837-838 doi:10.1143/jjap.5.837
Tsukamoto, Jun, Ohigashi, Hiroji, Matsumura, Kiichiro, Takahashi, Akio (1981) A Schottky Barrier Type Solar Cell Using Polyacetylene. Japanese Journal of Applied Physics, 20 (2) doi:10.1143/jjap.20.l127
Matsumoto, Kazuhiko, Hashizume, Nobuo, Tanoue, Hisao, Kanayama, Toshihiko (1982) High Temperature Stable W-GaAs Schottky Barrier. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l393
Inoguchi, Toshio, Tanaka, Tetsuro (1966) Photo-Effect on the Barrier Capacitance ofp-nJunction. Japanese Journal of Applied Physics, 5 (5) 456 doi:10.1143/jjap.5.456
Tanabe, Keiichi, Michikami, Osamu (1981) Synthesis of Nb3Al Thin Films by Magnetron Sputtering. Japanese Journal of Applied Physics, 20 (5) doi:10.1143/jjap.20.l359
Mishima, Yasuyoshi, Hirose, Masataka, Osaka, Yukio (1981) Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes. Japanese Journal of Applied Physics, 20 (3) 593-596 doi:10.1143/jjap.20.593
Munakata, Chusuke, Miyazaki, Masaru (1981) A Novel Method of Electron Beam Recording on a Si Wafer. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l293
Takahashi, Tatsuo, Yamada, Osamu (1981) Cathodoluminescence of Terbium Activated Metaphosphate Glasses. Japanese Journal of Applied Physics, 20 (5) 883-886 doi:10.1143/jjap.20.883
Hasegawa, Hideki (1999) Fermi Level Pinning and Schottky Barrier Height Control at Metal-Semiconductor Interfaces of InP and Related Materials. Japanese Journal of Applied Physics, 38. 1098-1102 doi:10.1143/jjap.38.1098
 
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