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Miyazaki, Tomoyuki, Hideshima, Osamu (1981) Anomalous Differential Capacitance of the Schottky Barrier on a Semiconductor with Electric-Field-Dependent Dielectric Constant. Japanese Journal of Applied Physics, 20 (5) 931-934 doi:10.1143/jjap.20.931

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Reference TypeJournal (article/letter/editorial)
TitleAnomalous Differential Capacitance of the Schottky Barrier on a Semiconductor with Electric-Field-Dependent Dielectric Constant
JournalJapanese Journal of Applied Physics
AuthorsMiyazaki, TomoyukiAuthor
Hideshima, OsamuAuthor
Year1981 (May)Volume20
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.931Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14984987Long-form Identifiermindat:1:5:14984987:8
GUID0
Full ReferenceMiyazaki, Tomoyuki, Hideshima, Osamu (1981) Anomalous Differential Capacitance of the Schottky Barrier on a Semiconductor with Electric-Field-Dependent Dielectric Constant. Japanese Journal of Applied Physics, 20 (5) 931-934 doi:10.1143/jjap.20.931
Plain TextMiyazaki, Tomoyuki, Hideshima, Osamu (1981) Anomalous Differential Capacitance of the Schottky Barrier on a Semiconductor with Electric-Field-Dependent Dielectric Constant. Japanese Journal of Applied Physics, 20 (5) 931-934 doi:10.1143/jjap.20.931
In(1981, May) Japanese Journal of Applied Physics Vol. 20 (5) Japan Society of Applied Physics

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Miyazaki, Tomoyuki, Hideshima, Osamu, Ohta, Toshihiko (1981) Differential Capacitance of the Schottky Barrier on a Semiconducting Ferroelectric and Related Materials. Japanese Journal of Applied Physics, 20 (5) 925-929 doi:10.1143/jjap.20.925
Hayashi, Seiji, Aoki, Ryozo (1980) Differential Capacitance of In-SrTiO3-xContacts –Influence of the Electric-Field-Dependent Permittivity–. Japanese Journal of Applied Physics, 19 (2) 331-335 doi:10.1143/jjap.19.331
Kimura, Tamotsu, Ohshima, Tomoyuki (1993) Schottky Characteristics of Subhalf-Micron Gate GaAs Metal-Semiconductor Field-Effect Transistor. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l183
Furukawa, Yoshitaka, Ishibashi, Yoshio (1966) Transient Phenomena in the Capacitance of GaAs Schottky Barrier Diodes. Japanese Journal of Applied Physics, 5 (9) 837-838 doi:10.1143/jjap.5.837
Furukawa, Yoshitaka, Ishibashi, Yoshio (1967) Transient Phenomena in Capacitance and Reverse Current in a GaAs Schottky Barrier Diode. Japanese Journal of Applied Physics, 6 (1) 13-20 doi:10.1143/jjap.6.13
Toriyama, Shuichi (2010) Schottky-Barrier Metal–Oxide–Semiconductor Field-Effect Transistors as Resonant Tunneling Devices. Japanese Journal of Applied Physics, 49 (10) 104204 doi:10.1143/jjap.49.104204
Tsukamoto, Jun, Ohigashi, Hiroji, Matsumura, Kiichiro, Takahashi, Akio (1981) A Schottky Barrier Type Solar Cell Using Polyacetylene. Japanese Journal of Applied Physics, 20 (2) doi:10.1143/jjap.20.l127
Mitsuyu, Tsuneo, Wasa, Kiyotaka (1981) High Dielectric Constant Films of Amorphous LiNbO3Prepared by Sputtering Deposition. Japanese Journal of Applied Physics, 20 (1) doi:10.1143/jjap.20.l48
Hirayama, Makoto, Asai, Sotoju, Matsumoto, Heihachi, Sawada, Kokichi, Nagasawa, Koichi (1981) Time Dependent Dielectric Breakdown of Thin SiO2Films. Japanese Journal of Applied Physics, 20 (5) doi:10.1143/jjap.20.l329
Inoguchi, Toshio, Tanaka, Tetsuro (1966) Photo-Effect on the Barrier Capacitance ofp-nJunction. Japanese Journal of Applied Physics, 5 (5) 456 doi:10.1143/jjap.5.456
Hiromitsu, Ichiro, Kinugawa, Genki (2005) Correlation between Inner Electric Field and Photocurrent of Zn-Phthalocyanine Schottky-Barrier Cells. Japanese Journal of Applied Physics, 44 (1) 60-66 doi:10.1143/jjap.44.60
 
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