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Yamaguchi, Eiichi, Kobayashi, Takeshi (1982) Optically-Gated InP-MISFET: A New High-Gain Optical Detector. Japanese Journal of Applied Physics, 21. 104-108 doi:10.1143/jjap.21.104

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Reference TypeJournal (article/letter/editorial)
TitleOptically-Gated InP-MISFET: A New High-Gain Optical Detector
JournalJapanese Journal of Applied Physics
AuthorsYamaguchi, EiichiAuthor
Kobayashi, TakeshiAuthor
Year1982 (January 5)Volume21
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.21.104Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14985257Long-form Identifiermindat:1:5:14985257:1
GUID0
Full ReferenceYamaguchi, Eiichi, Kobayashi, Takeshi (1982) Optically-Gated InP-MISFET: A New High-Gain Optical Detector. Japanese Journal of Applied Physics, 21. 104-108 doi:10.1143/jjap.21.104
Plain TextYamaguchi, Eiichi, Kobayashi, Takeshi (1982) Optically-Gated InP-MISFET: A New High-Gain Optical Detector. Japanese Journal of Applied Physics, 21. 104-108 doi:10.1143/jjap.21.104
In(1982) Japanese Journal of Applied Physics Vol. 21. Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Shinoda, Yukinobu, Okamura, Masamichi, Yamaguchi, Eiichi, Kobayashi, Takeshi (1980) InGaAsP n-Channel Inversion-Mode MISFET. Japanese Journal of Applied Physics, 19 (11) 2301-2302 doi:10.1143/jjap.19.2301
Okamura, Masamichi, Yamaguchi, Eiichi, Hirota, Yukihiro (1988) First Observation of Quantum Hall Effect in InP-MISFET. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l1151
Okamura, Masamichi, Kobayashi, Takeshi (1980) Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET. Japanese Journal of Applied Physics, 19 (11) 2143-2150 doi:10.1143/jjap.19.2143
Okamura, Masamichi, Kobayashi, Takeshi (1980) Improved Interface in Inversion-Type InP-MISFET by Vapor Etching Technique. Japanese Journal of Applied Physics, 19 (11) 2151-2156 doi:10.1143/jjap.19.2151
Okamura, Masamichi, Kobayashi, Takeshi (1980) Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFET. Japanese Journal of Applied Physics, 19 (10) doi:10.1143/jjap.19.l599
Okamura, Masamichi, Kobayashi, Takeshi (1981) Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFET. Japanese Journal of Applied Physics, 20 (1) doi:10.1143/jjap.20.l79
Yamaguchi, Eiichi (1982) Isothermal Capacitance Transient Spectroscopy in MIS Structures. Japanese Journal of Applied Physics, 21. 1628-1632 doi:10.1143/jjap.21.1628
Yamaguchi, Eiichi, Kobayashi, Takeshi (1982) Impact-Ionization of Excitons and Application to Gate-Controlled Bistable Switching. Japanese Journal of Applied Physics, 21. 389 doi:10.7567/jjaps.21s1.389
Yamaguchi, Akio, Komiya, Satoshi, Umebu, Itsuo, Wada, Osamu, Akita, Kenzo (1982) Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l297
Mikami, Osamu, Okamura, Masamichi, Yamaguchi, Eiichi, Hirota, Yukihiro, Furukawa, Yoshitaka (1984) Current-Drift Suppressed InP MISFETs with New Gate Insulator. Japanese Journal of Applied Physics, 23. 1408-1409 doi:10.1143/jjap.23.1408
Maruyama, Eiichi (1982) Amorphous Built-in-Field Effect Photoreceptors. Japanese Journal of Applied Physics, 21. 213-223 doi:10.1143/jjap.21.213
 
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