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(1982) Japanese Journal of Applied Physics Vol. 21. Japan Society of Applied Physics

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Reference TypeJournal (volume)
JournalJapanese Journal of Applied Physics
Year1982Volume<   21   >
PublisherJapan Society of Applied Physics
Mindat Ref. ID14985246Long-form Identifiermindat:1:5:14985246:5
GUID0
Full Reference(1982) Japanese Journal of Applied Physics Vol. 21. Japan Society of Applied Physics
Plain Text(1982) Japanese Journal of Applied Physics Vol. 21. Japan Society of Applied Physics
InJapan Society of Applied Physics - Japanese Journal of Applied Physics

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Maycock, Paul D. (1982) (Invited) Photovoltaic Technology Progress and Industrialization Prospects. Japanese Journal of Applied Physics, 21. 1 doi:10.7567/jjaps.21s2.1
Negishi, Katsuo (1982) Visualization of Ultrasonic Waves by Schlieren Method. Japanese Journal of Applied Physics, 21. 3 doi:10.7567/jjaps.21s3.3
Seliger, R. L., Kubena, R. L., Wang, V. (1982) (Invited) Fine Focused Ion Beams. Japanese Journal of Applied Physics, 21. 3 doi:10.7567/jjaps.21s1.3
Itoh, Haruo, Tokiguchi, Katsumi, Saitoh, Tadashi, Tamura, Masao, Tokuyama, Takashi (1982) Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation. Japanese Journal of Applied Physics, 21. 7 doi:10.7567/jjaps.21s2.7
Chubachi, Noriyoshi (1982) Mechanically Scanned Acoustic Microscope. Japanese Journal of Applied Physics, 21. 7 doi:10.7567/jjaps.21s3.7
Ishiguro, Takehiko, Tokumoto, Hiroshi (1982) Application of Photoacoustic Spectroscopy to Solids. Japanese Journal of Applied Physics, 21. 11 doi:10.7567/jjaps.21s3.11
Aoki, Masaharu, Washiyama, Masako, Nakamura, Hiroshi, Sakamoto, Kunihiro (1982) (Invited) Solution Growth of II–VI Compounds. Japanese Journal of Applied Physics, 21. 11 doi:10.7567/jjaps.21s1.11
Usami, Akira, Takebayashi, Koji (1982) Si Solar Cells Fabricated by Ion Implantation and Short Time Furnace Processing. Japanese Journal of Applied Physics, 21. 13 doi:10.7567/jjaps.21s2.13
Onoe, Morio (1982) Recent Trends in Nondestructive Ultrasonic Testing. Japanese Journal of Applied Physics, 21. 16 doi:10.7567/jjaps.21s3.16
Matsuda, Sumio, Hirano, Taizo, Matsutani, Toshinobu, Kiyota, Yoshiharu, Saga, Tatsuo, Uchida, Yasunori, Sato, Hiroshi (1982) Radiation Test of Silicon Solar Cells for Space Application. Japanese Journal of Applied Physics, 21. 19 doi:10.7567/jjaps.21s2.19
Ikushima, Akira J., Fujii, Itsuhiro, Nara, Koichi (1982) Ultrasonic Measurements Under Extreme Conditions. Part I. –Measurements at Ultralow Temperatures. Japanese Journal of Applied Physics, 21. 20 doi:10.7567/jjaps.21s3.20
Nagata, Minoru, Okada, Yutaka (1982) (Invited) The Potential for Bipolar VLSIs. Japanese Journal of Applied Physics, 21. 21 doi:10.7567/jjaps.21s1.21
Matsutani, Toshinobu, Saga, Tatsuo, Ueyama, Hideyuki, Hagihara, Yasufumi, Hirano, Taizo, Suzuki, Akio (1982) Ultrathin Silicon Solar Cell for Space Application. Japanese Journal of Applied Physics, 21. 23 doi:10.7567/jjaps.21s2.23
Hiki, Yosio, Kosugi, Toshio (1982) Ultrasonic Measurements Under Extreme Conditions. Part II. –Measurements under High Pressure. Japanese Journal of Applied Physics, 21. 23 doi:10.7567/jjaps.21s3.23
Shibayama, Kimio (1982) A Review of Progress in Filter Devices and their Future. Japanese Journal of Applied Physics, 21. 26 doi:10.7567/jjaps.21s3.26
Yoshida, Susumu, Mitsui, Kotaro, Oda, Takao, Yukimoto, Yoshinory (1982) Comparison of High Energy Proton Radiation Damages on AlGaAs/GaAs and Si Solar Cells. Japanese Journal of Applied Physics, 21. 27 doi:10.7567/jjaps.21s2.27
Hirao, Tadashi, Ishikura, Hidenobu, Ohsaki, Saburo, Tubouchi, Natsuro (1982) A High-Speed I2L Process/Structure for VLSI. Japanese Journal of Applied Physics, 21. 27 doi:10.7567/jjaps.21s1.27
Hanihara, Koji, Kamiya, Takeshi, Yanai, Hisayoshi (1982) Quasi-Three-Dimensional Approach to Transient Analysis of I2L Devices. Japanese Journal of Applied Physics, 21. 31 doi:10.7567/jjaps.21s1.31
Yamada, Hisao (1982) Numerical Calculations of Ultrasonic Fields of a Circular Piston and Its Representations by Contour Lines. Japanese Journal of Applied Physics, 21. 33 doi:10.7567/jjaps.21s3.33
Saito, Takeshi, Shimura, Akio, Ichikawa, Shoji (1982) Silicon Sheet Casting using a Mold Releasing Agent. Japanese Journal of Applied Physics, 21. 35 doi:10.7567/jjaps.21s2.35
Ueda, Mitsuhiro (1982) Estimation of Echo Signal in Near Field. Japanese Journal of Applied Physics, 21. 36 doi:10.7567/jjaps.21s3.36
Tamaki, Yoichi, Kure, Tokuo, Shiba, Takeo, Higuchi, Hisayuki (1982) U-Groove Isolation Technology for High Density Bipolar LSI's. Japanese Journal of Applied Physics, 21. 37 doi:10.7567/jjaps.21s1.37
Noguchi, Kesao, Saito, Takeshi, Shimura, Akio, Ichikawa, Shoji (1982) Plasma Hydrogenation Effects in Cast Polycrystalline Silicon Solar Cells. Japanese Journal of Applied Physics, 21. 39 doi:10.7567/jjaps.21s2.39
Kawashima, Katsuhiro (1982) Pulse Ultrasonic Wave in Metal. Japanese Journal of Applied Physics, 21. 39 doi:10.7567/jjaps.21s3.39
Koshiba, Masanori, Okada, Masaya, Hayata, Kazuya, Suzuki, Michio (1982) Finite-Element Analysis of Acoustic Surface Waveguides Using Approximate Analytical Solutions. Japanese Journal of Applied Physics, 21. 42 doi:10.7567/jjaps.21s3.42
Arai, Eisuke (1982) (Invited) VLSI Fine Technology and Its Problems. Japanese Journal of Applied Physics, 21. 43 doi:10.7567/jjaps.21s1.43
Maeda, Yasuhiro, Yokoyama, Takashi (1982) Large Area Si Sheet Prepared Using Spinning Method. Japanese Journal of Applied Physics, 21. 43 doi:10.7567/jjaps.21s2.43
Hirao, Masahiko, Miura, Yosuke, Fukuoka, Hidekazu (1982) Reflection and Transmission of Rayleigh Surface Wave at a Surface Crack. Japanese Journal of Applied Physics, 21. 45 doi:10.7567/jjaps.21s3.45
Morita, Hiroshi, Sato, Akira, Washida, Hiroshi, Kato, Taketoshi, Onoe, Akira (1982) Efficiency Improvement of Solar Cell utilizing Plasma-deposited Silicon Nitride. Japanese Journal of Applied Physics, 21. 47 doi:10.7567/jjaps.21s2.47
Nakagawa, Yasuhiko (1982) Surface Acoustic Wave Parametric Oscillation. Japanese Journal of Applied Physics, 21. 48 doi:10.7567/jjaps.21s3.48
Fukuma, Masao, Ohno, Yasuo, Okuto, Yuji (1982) SOS CMOS 16 Bit Parallel Multiplier. Japanese Journal of Applied Physics, 21. 51 doi:10.7567/jjaps.21s1.51
Yoneda, Katsumi, Tawata, Masahiro, Hattori, Shuzo (1982) Measurement of SAW Propagation Properties Using a Laser Probe. Japanese Journal of Applied Physics, 21. 51 doi:10.7567/jjaps.21s3.51
Yamamoto, Hidekazu, Moniwa, Masahiro, Hasegawa, Hideki (1982) Polycrystalline and Amorphous Si MOS Solar Cells by Anodization. Japanese Journal of Applied Physics, 21. 53 doi:10.7567/jjaps.21s2.53
Saiga, Noriaki, Tanii, Kiyoshi, Suzuki, Tatsuro (1982) Optical Probing for Detecting Surface Displacement Profile of Ultrasound Vibrations. Japanese Journal of Applied Physics, 21. 54 doi:10.7567/jjaps.21s3.54
Takemoto, Toyoki, Inoue, Michihiro, Sadamatsu, Hideaki, Matsuzawa, Akira, Komeda, Tadao (1982) A Low Power 8 Bit Parallel A/D Converter with High Accuracy Process. Japanese Journal of Applied Physics, 21. 55 doi:10.7567/jjaps.21s1.55
Moniwa, Masahiro, Arimoto, Satoshi, Hasegawa, Hideki (1982) Poly-Si and a-Si: H MOS Photodiodes for Large-Area, High Spatial Resolution Photosensor Arrays. Japanese Journal of Applied Physics, 21. 57 doi:10.7567/jjaps.21s2.57
Toda, Kohji, Urabe, Heijiro (1982) Measurement of Sound Velocity Change in a Liquid Using a Liquid Delay Line Oscillator. Japanese Journal of Applied Physics, 21. 57 doi:10.7567/jjaps.21s3.57
Furuyama, Tohru, Saito, Shozo, Fujii, Shuso (1982) Threshold Voltage Difference Compensating Sense Amplifier for High Density Dynamic MOS RAMs. Japanese Journal of Applied Physics, 21. 61 doi:10.7567/jjaps.21s1.61
Suda, Toshikazu, Kobayashi, Mitsuyoshi, Kuroyanagi, Akio, Kurita, Shoichi (1982) Zn3P2/ITO Heterojunction Solar Cells. Japanese Journal of Applied Physics, 21. 63 doi:10.7567/jjaps.21s2.63
Shimizu, Masaru, Yamamoto, Takashi, Shiosaki, Tadashi, Kawabata, Akira (1982) Preparation of Highly C-Axis Oriented ZnO Thin Films by Plasma-Enhanced Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 21. 63 doi:10.7567/jjaps.21s3.63
Sakai, Takamasa, Sato, Yasuhiko (1982) Electrical Characteristics in Al/ZnO/SiO2/Si Structure. Japanese Journal of Applied Physics, 21. 66 doi:10.7567/jjaps.21s3.66
Kume, Hitoshi, Takeda, Eiji, Toyabe, Toru, Asai, Shojiro (1982) Dependence of Channel Hot-Electron Injection on MOSFET Structure. Japanese Journal of Applied Physics, 21. 67 doi:10.7567/jjaps.21s1.67
Naito, Hiroyoshi, Matsushita, Tatsuhiko, Suzuki, Akio, Okuda, Masahiro, Nakau, Tanehiro (1982) Effect of Photo-Induced Microcrystallization on Inx(Si0.1Se0.9)1-xFilm-ITO Solar Cells. Japanese Journal of Applied Physics, 21. 67 doi:10.7567/jjaps.21s2.67
Shiosaki, Tadashi, Harada, Kazushige, Kawabata, Akira (1982) Low-Temperature Growth of Piezoelectric AlN Film and its Optical and Acoustical Properties. Japanese Journal of Applied Physics, 21. 69 doi:10.7567/jjaps.21s3.69
Takahashi, Sadayuki, Yonezawa, Masatomo, Inoue, Takeshi, Ohta, Masaya (1982) Piezoelectric Ceramics Used for Thickness Shear Mode and Their Applications. Japanese Journal of Applied Physics, 21. 72 doi:10.7567/jjaps.21s3.72
Aoki, Masaaki, Toyabe, Toru, Shinoda, Takashi, Masuhara, Toshiaki, Asai, Shojiro, Kawamoto, Hiroshi, Mususada, Kazumichi (1982) Soft Error Rate Analysis Model (SERAM) for Dynamic NMOS RAMs. Japanese Journal of Applied Physics, 21. 73 doi:10.7567/jjaps.21s1.73
Kunioka, Akio, Nakada, Tokio (1982) High-Efficiency Selenium Photovoltaic Solar Cells. Japanese Journal of Applied Physics, 21. 73 doi:10.7567/jjaps.21s2.73
Ito, Hideo, Oka, Masayoshi, Ogino, Toshio, Takeda, Akitsu, Mizushima, Yoshihiko (1982) Selenium Thin Film Solar Cell. Japanese Journal of Applied Physics, 21. 77 doi:10.7567/jjaps.21s2.77
Tokumoto, Hiroshi, Unoki, Hiromi, Ishiguro, Takehiko (1982) Brillouin Scattering in BiVO4at High Temperatures. Japanese Journal of Applied Physics, 21. 77 doi:10.7567/jjaps.21s3.77
Tsuchiya, Toshiaki, Nakajima, Shigeru (1982) Novel High Alpha-Particle-Immunity and High Density d-RAM Cell. Japanese Journal of Applied Physics, 21. 79 doi:10.7567/jjaps.21s1.79
Tokunaga, Yoshiaki, Morimoto, Shozo, Okano, Shuichi, Suzuki, Masakuni, Hata, Tomonobu (1982) Change in the characteristics of amorphous As2S3induced by injected acoustic domains. Japanese Journal of Applied Physics, 21. 80 doi:10.7567/jjaps.21s3.80
Okimura, Hiroshi, Togasaki, Masami, Iwase, Mitsuo, Gekka, Yasuo (1982) Photovoltaic Properties of Cuprous Chalcogenide-Silicon Junctions. Japanese Journal of Applied Physics, 21. 83 doi:10.7567/jjaps.21s2.83
Takagi, Kenshiro, Ozawa, Harue (1982) Ultrasonic Spectroscopy in Liquid Bromoform. Japanese Journal of Applied Physics, 21. 83 doi:10.7567/jjaps.21s3.83
Yatsuda, Yuji, Hagiwara, Takaaki, Minami, Shin-ichi, Kondo, Ryuji, Uchida, Ken, Uchiumi, Kyotake (1982) Scaling Down MNOS Nonvolatile Memory Devices. Japanese Journal of Applied Physics, 21. 85 doi:10.7567/jjaps.21s1.85
Mitaku, Shigeki, Jippo, Toshiyo, Kataoka, Ryoichi, Date, Takeshi (1982) Critical Slowing Down in Lipid Bilayer Membrane Studied by a Differential Ultrasonic Resonator. Japanese Journal of Applied Physics, 21. 86 doi:10.7567/jjaps.21s3.86
Nobuhara, Hiroyuki, Sakai, Shiro, Umeno, Masayoshi (1982) Wavelength Division GaAlAs/GaAs Solar Cells Grown by MOCVD. Japanese Journal of Applied Physics, 21. 89 doi:10.7567/jjaps.21s2.89
Tanaka, Hajime, Nakajima, Haruhiko, Wada, Yasaku (1982) Sound Velocity in Critical Binary Mixtures. Japanese Journal of Applied Physics, 21. 89 doi:10.7567/jjaps.21s3.89
Ohashi, Hiromichi, Tsukakoshi, Tsuneo, Ogura, Tsuneo, Yamaguchi, Yoshihiro (1982) Novel Gate Structure for High Voltage Light-Triggered Thyristor. Japanese Journal of Applied Physics, 21. 91 doi:10.7567/jjaps.21s1.91
Hamaguchi, Chihiro, Shimomae, Koichi, Hirose, Yoshikazu (1982) Measurements of Band-Edge and Intervalley Phonons in Semiconductors by Magnetophonon Resonance. Japanese Journal of Applied Physics, 21. 92 doi:10.7567/jjaps.21s3.92
Sasaki, Akio, Ishio, Keisuke, Noda, Susumu, Fujita, Shigeo (1982) GaP, AlGaAs/GaAs, AlGaAsSb/GaSb Photovoltaic Devices and Characteristics. Japanese Journal of Applied Physics, 21. 93 doi:10.7567/jjaps.21s2.93
Tamura, Junichi, Hiki, Yosio (1982) Ultrasonic Attenuation in Ice Crystals. Japanese Journal of Applied Physics, 21. 95 doi:10.7567/jjaps.21s3.95
Nakagawa, Akio, Yoshida, Jiro, Utagawa, Tadashi, Tsukakoshi, Tsuneo, Tanabe, Hirohito, Kuramoto, Tsuyoshi (1982) High Voltage Low On-Resistance VDMOS FET. Japanese Journal of Applied Physics, 21. 97 doi:10.7567/jjaps.21s1.97
Masu, Kazuya, Konagai, Makoto, Nakatsuka, Shin-ichi, Takahashi, Kiyoshi (1982) p-Ga0.2Al0.8As/p-Ga1-yAlyAs/n-Ga1-yAlyAs Solar Cells. Japanese Journal of Applied Physics, 21. 99 doi:10.7567/jjaps.21s2.99
Morimoto, Jun, Ito, Takamichi, Miyakawa, Toru (1982) Photoacoustic Spectra of CdS: Cu by Piezoelectric Transducers. Japanese Journal of Applied Physics, 21. 101 doi:10.7567/jjaps.21s3.101
Matsumoto, Hitoshi, Uda, Hiroshi, Komatsu, Yasumasa, Nakano, Akihiko, Ikegami, Seiji (1982) The Effect of CdTe Pattern on the Characteristics of Screen Printed CdS/CdTe Solar Cell. Japanese Journal of Applied Physics, 21. 103 doi:10.7567/jjaps.21s2.103
Kawai, Masatoshi, Morimoto, Jun, Yoshioka, Takeshi, Miyakawa, Toru (1982) Photoacoustic Signal Induced by Pulse Ruby Laser in CdS. Japanese Journal of Applied Physics, 21. 104 doi:10.7567/jjaps.21s3.104
Kishino, Seigô (1982) (Invited) Microdefects in Czochralski-Grown Silicon Crystals and Their Application to Gettering Technique. Japanese Journal of Applied Physics, 21. 105 doi:10.7567/jjaps.21s1.105
Yamashita, Kouichi, Kasahara, Hajime, Yamamoto, Keiichi, Abe, Kenji (1982) Photoacoustic Spectra in Ternary Semiconducting Compound CdIn2S4. Japanese Journal of Applied Physics, 21. 107 doi:10.7567/jjaps.21s3.107
Suda, Toshikazu, Suzuki, Masahisa, Kurita, Shoichi (1982) Sputtered n-ITO/p-InP Solar Cells. Japanese Journal of Applied Physics, 21. 109 doi:10.7567/jjaps.21s2.109
Suemune, Ikuo, Nonomura, Kazuhiro, Yamanishi, Masamichi, Mikoshiba, Nobuo (1982) Generation Mechanisms of Current-Injection-Induced Acoustic (CIA) Signals in Semiconductor Lasers. Japanese Journal of Applied Physics, 21. 110 doi:10.7567/jjaps.21s3.110
Tajima, Michio (1982) (Invited) Recent Advances in Photoluminescence Analysis of Si: Application to an Epitaxial Layer and Nitrogen in Si. Japanese Journal of Applied Physics, 21. 113 doi:10.7567/jjaps.21s1.113
Hatano, Hajime (1982) Absolute Calibration of Acoustic Emission Transducers. Japanese Journal of Applied Physics, 21. 115 doi:10.7567/jjaps.21s3.115
Matsuura, Hideharu, Fujii, Hisao, Takai, Hitoshi, Matsunami, Hiroyuki (1982) Characteristics of Silicon Inversion Layer Solar Cells. Japanese Journal of Applied Physics, 21. 117 doi:10.7567/jjaps.21s2.117
Saito, Tetsuo, Fujimori, Toshiaki, Harumit, Kasaburo, Okada, Hisao (1982) Discrimination of Defects by the Change of Wave Shape: Reflection at Right-Angle Corner. Japanese Journal of Applied Physics, 21. 117 doi:10.7567/jjaps.21s3.117
Okada, Hisao, Harumi, Kasaburo, Watanabe, Shigeyoshi (1982) Reflection of Elastic Waves by an Infinitely Long Ribbon Crack (PART II) Japanese Journal of Applied Physics, 21. 120 doi:10.7567/jjaps.21s3.120
Nagatomo, Takao, Inagaki, Yoshio, Amano, Yuji, Omoto, Osamu (1982) A Comparison of Spray-Deposited ITO/n-Si and SnO2/n-Si Solar Cells. Japanese Journal of Applied Physics, 21. 121 doi:10.7567/jjaps.21s2.121
Ikeda, Kousuke, Takaoka, Hidetoshi (1982) Deep Levels Induced in Annealed CZ Silicon. Japanese Journal of Applied Physics, 21. 121 doi:10.7567/jjaps.21s1.121
Takahashi, Kiyoshi, Matsushige, Kazumi, Sakurada, Yasuhiro (1982) Application of Ultrasonic Fractography to Visco-Elastic Materials. Japanese Journal of Applied Physics, 21. 123 doi:10.7567/jjaps.21s3.123
Ito, Kentaro, Nakazawa, Tatsuo, Masamura, Akira (1982) Silicon Solar Cells Made by Liquid Phase Epitaxy. Japanese Journal of Applied Physics, 21. 125 doi:10.7567/jjaps.21s2.125
Okada, Kenichi (1982) On a Hysteresis Property in Acoustoelastic Effect. Japanese Journal of Applied Physics, 21. 126 doi:10.7567/jjaps.21s3.126
Nakayama, Hiroshi, Katsura, Johji, Nishino, Taneo, Hamakawa, Yoshihiro (1982) A New Photoluminescence Method of Characterizing the In-Depth Profile of Thermally Induced Defects in CZ–Si. Japanese Journal of Applied Physics, 21. 127 doi:10.7567/jjaps.21s1.127
Toda, Hiroki, Fukuoka, Hidekazu (1982) Texture-Induced Acoustic Anisotropy due to Compressive Deformation (Effects of Strain-Rate and Temperature) Japanese Journal of Applied Physics, 21. 129 doi:10.7567/jjaps.21s3.129
Kato, Taketoshi, Inomata, Koichiro, Morita, Hiroshi, Mori, Fumio, Nakano, Hirotaka, Sugai, Shinzo, Washida, Hiroshi, Onoe, Akira (1982) Bus Electrode Having Same Thermal Expansion Coefficient as Crystalline Silicon Solar Cell. Japanese Journal of Applied Physics, 21. 131 doi:10.7567/jjaps.21s2.131
Imamura, Tatsuo, Ueha, Sadayuki, Tsujiuchi, Jumpei (1982) Acoustic Interferometry (Measurement of Internal Stress Distribution in Solid) Japanese Journal of Applied Physics, 21. 132 doi:10.7567/jjaps.21s3.132
Yamada, Ken, Shimizu, Hiroshi (1982) New Types of Ultrasound Focusing Transducer Sysmtems. Japanese Journal of Applied Physics, 21. 135 doi:10.7567/jjaps.21s3.135
Tsuda, Minoru, Oikawa, Setsuko (1982) (Invited) Mechanism of Dry Development and Dry Etch Resistance of Resist. Japanese Journal of Applied Physics, 21. 135 doi:10.7567/jjaps.21s1.135
Murozono, Mikio, Kitamura, Sotoyuki, Ohmura, Takuichi, Kusao, Kenji, Umeo, Yoshiyuki (1982) Titanium Dioxide Antireflective Coating for Silicon Solar Cells by Spinning Technique. Japanese Journal of Applied Physics, 21. 137 doi:10.7567/jjaps.21s2.137
Nomura, Tooru, Kikuchi, Tsuneo, Moriizumi, Toyosaka, Yasuda, Tsutomu, Toda, Kohji (1982) Underwater Ultrasonic Wave Transducer Using Interdigital Electrodes. Japanese Journal of Applied Physics, 21. 138 doi:10.7567/jjaps.21s3.138
Yamanaka, Kazushi, Enomoto, Yuji (1982) Observation of Subsurface Flaws with Scanning Acoustic Microscope. Japanese Journal of Applied Physics, 21. 141 doi:10.7567/jjaps.21s3.141
Tachi, Shin'ichi, Miyake, Kiyoshi, Tokuyama, Takashi (1982) Chemical and Physical Roles of Individual Reactive Ions in Si Dry Etching. Japanese Journal of Applied Physics, 21. 141 doi:10.7567/jjaps.21s1.141
Shimada, Katsunori (1982) (Invited) Cost Estimates for Flat Plate and Concentrator Collector Arrays. Japanese Journal of Applied Physics, 21. 143 doi:10.7567/jjaps.21s2.143
Motooka, Seiichi, Okujima, Motoyoshi (1982) Study on Detection of Buried Steel Bar in Concrete with Electromagnetic Impact Driving Method. Japanese Journal of Applied Physics, 21. 144 doi:10.7567/jjaps.21s3.144
Sakamoto, Mitsuru, Saito, Manzo, Hamano, Kuniyuki (1982) A Novel Technology for Self-Aligned Contact Formation. Japanese Journal of Applied Physics, 21. 147 doi:10.7567/jjaps.21s1.147
Itoh, Takashi, Choi, Jong-soo, Ksai, Chihiro, Nakajima, Masato (1982) Correction for Refraction on Ultrasonic CT. Japanese Journal of Applied Physics, 21. 149 doi:10.7567/jjaps.21s3.149
Mochizuki, Takashi, Hirose, Masanori, Kasai, Chihiro (1982) Sound Fields of Ultrasonic Array Transducers. Japanese Journal of Applied Physics, 21. 152 doi:10.7567/jjaps.21s3.152
Kato, Ichiro, Ito, Takashi, Inoue, Shin-ichi, Nakamura, Tetsuo, Ishikawa, Hajime (1982) Ammonia-Annealed SiO2Films for Thin-Gate Insulator. Japanese Journal of Applied Physics, 21. 153 doi:10.7567/jjaps.21s1.153
Sato, Tomomasa (1982) Holographic Sonar 3D Underwater Ultrasonic Imaging Using Thinned-out Image Reconstruction. Japanese Journal of Applied Physics, 21. 155 doi:10.7567/jjaps.21s3.155
Kim, Chisu, Kim, Yongcha, Husimi, Kazuo, Ohkawa, Shoichi, Kikuchi, Ko (1982) Light Position Sensitive Silicon Detectors Produced by Using the Epitaxial Growth Technique. Japanese Journal of Applied Physics, 21. 157 doi:10.7567/jjaps.21s2.157
Nagai, Keinosuke (1982) Numerical Reconstruction Systems from Acoustic Holograms Using the Backward Propagation Method. Japanese Journal of Applied Physics, 21. 158 doi:10.7567/jjaps.21s3.158
Okujima, Motoyoshi, Ohtsuki, Shigeo, Kobayashi, Kazumasa (1982) A Signal Processing for Realization of Ultrasonic Observation System of Sea Flow over a Long Distance. Japanese Journal of Applied Physics, 21. 161 doi:10.7567/jjaps.21s3.161
Hiyamizu, Satoshi, Mimura, Takashi, Ishikawa, Tomonori (1982) (Invited) MBE-Grown GaAs/N–AlGaAs Heterostructures and Their Application to High Electron Mobility Transistors. Japanese Journal of Applied Physics, 21. 161 doi:10.7567/jjaps.21s1.161
Fujisaki, Masahito, Mizukami, Noboru, Kitamura, Akio, Kuniyasu, Hiroshi (1982) Temperature Dependence of Si Solar Cell Performance under Concentrated Sunlight. Japanese Journal of Applied Physics, 21. 163 doi:10.7567/jjaps.21s2.163
Takahashi, Sumio, Kikuchi, Toshiaki (1982) Comparison of Optical Fiber Hydrophones. Japanese Journal of Applied Physics, 21. 164 doi:10.7567/jjaps.21s3.164
Sasatani, Yukihiro, Iguchi, Shin-ichi, Murakami, Kazuhito, Hosoda, Yoshikado, Motoyoshi, Kenya (1982) GaAs Concentrator Solar Cells Using Aluminum-Cored Printed Circuit Bases. Japanese Journal of Applied Physics, 21. 167 doi:10.7567/jjaps.21s2.167
Takayama, Ryoichi, Tokushima, Akira, Ueshiba, Nozomu, Ise, Yukihiko (1982) Ultrasonic Transducer of Piezoelectric Ceramic for Pulse Driving. Japanese Journal of Applied Physics, 21. 167 doi:10.7567/jjaps.21s3.167
Nishimura, Tadashi, Sakurai, Hiromi, Nagao, Shigeo, Isu, Toshiro, Akasaka, Youichi, Tsubouchi, Natsuro (1982) Recrystallization of Silicon Film on Nitride/Oxide Double Insulating Structure by CW Laser Irradiation. Japanese Journal of Applied Physics, 21. 169 doi:10.7567/jjaps.21s1.169
Kawashima, Maumi, Hosoda, Yoshikado, Suzawa, Chizuru, Shimada, Toshiro, Motoyoshi, Kenya, Sasatani, Yukihiro (1982) GaAs Solar Cell Test Facility. Japanese Journal of Applied Physics, 21. 173 doi:10.7567/jjaps.21s2.173
Tomikawa, Yoshiro, Sakano, Shizuo, Oyama, Shigeru, Konno, Masashi (1982) Tuning fork Resonator Using Shear Mode Piezoelectric Ceramic. Japanese Journal of Applied Physics, 21. 173 doi:10.7567/jjaps.21s3.173
Yoshii, Toshio, Taguchi, Shinji, Inoue, Tomoyasu, Tango, Hiroyuki (1982) Improvement of SOS Device Performance by Solid-Phase Epitaxy. Japanese Journal of Applied Physics, 21. 175 doi:10.7567/jjaps.21s1.175
Hirabayashi, Makoto (1982) A Surface-Acoustic-Wave Continuously-Variable Delay Device with Two Unidirectional Transducers. Japanese Journal of Applied Physics, 21. 176 doi:10.7567/jjaps.21s3.176
Nakano, Shoichi, Shibuya, Hisashi, Yokoo, Toshiaki, Tsukamoto, Kazuyoshi, Kuwano, Yukinori (1982) A 2 kW Photovoltaic Power Generating System Using a-Si Solar Cells. Japanese Journal of Applied Physics, 21. 177 doi:10.7567/jjaps.21s2.177
Ebata, Yasuo, Sato, Koji (1982) Low Loss RF Filter Using SAW Resonator. Japanese Journal of Applied Physics, 21. 179 doi:10.7567/jjaps.21s3.179
Kobayashi, Yutaka, Ikeda, Takahide, Nakamura, Minoru, Suzuki, Takaya (1982) Improvement of Characteristics in SOS/MOSFETs by Laser Annealing. Japanese Journal of Applied Physics, 21. 181 doi:10.7567/jjaps.21s1.181
Yamanouchi, Kazuhiko, Meguro, Toshiyasu (1982) Group-type Unidirectional Acoustic Surface Wave Filters Using Distance Weighting Techniques. Japanese Journal of Applied Physics, 21. 182 doi:10.7567/jjaps.21s3.182
Okano, Shuichi, Kawachi, Ryuichi, Yamazaki, Ryoichi, Kakimoto, Yoshio, Suzuki, Masakuni (1982) Conductivity Control and Photovoltaic Effects in Chalcogenide Amorphous Semiconductor. Japanese Journal of Applied Physics, 21. 185 doi:10.7567/jjaps.21s2.185
Shimizu, Yasutaka, Miroku, Yoshihiko (1982) Scattering from the SAW Waveguide with Edge Corrugations. Japanese Journal of Applied Physics, 21. 185 doi:10.7567/jjaps.21s3.185
Asano, Tanemasa, Ishiwara, Hiroshi (1982) Formation of an Epitaxial Si/Insulator/Si Structure by Vacuum Deposition of CaF2and Si. Japanese Journal of Applied Physics, 21. 187 doi:10.7567/jjaps.21s1.187
Minagawa, Shoichi, Okamoto, Takeshi, Asai, Ryuichi, Tsubouchi, Kazuo, Mikoshiba, Nobuo (1982) SAW Convolver Utilizing Sezawa Wave in a Monolithic ZnO/Si Configuration. Japanese Journal of Applied Physics, 21. 188 doi:10.7567/jjaps.21s3.188
Uchida, Yoshiyuki, Ichimura, Takeshige, Nabeta, Osamu, Takeda, Yukio, Haruki, Hiromu (1982) Effect of the Deposition Condition on Properties of a-Si: F: H Films. Japanese Journal of Applied Physics, 21. 193 doi:10.7567/jjaps.21s2.193
Hatano, Hajime, Sakuma, Sadaomi, Oosumi, Jun-ichi (1982) Vibration Characteristics of Piezoelectric-Ceramic Transducers for Generating High-Frequency Ultrasonic Power. Japanese Journal of Applied Physics, 21. 193 doi:10.7567/jjaps.21s3.193
Tamura, Masao, Ohkura, Makoto, Tokuyama, Takashi (1982) Laser-Induced Lateral, Vertically-Seeded Epitaxial Regrowth of Deposited Si Films over Various SiO2Patterns. Japanese Journal of Applied Physics, 21. 193 doi:10.7567/jjaps.21s1.193
Nakane, Tomoo, Otsuka, Tetsuro, Seya, Koichiro (1982) Electrostatic Precipitation with Ultrasound Field. Japanese Journal of Applied Physics, 21. 196 doi:10.7567/jjaps.21s3.196
Suzuki, Masakuni, Suzuki, Makoto, Kanada, Matahiko, Shimizu, Shin, Takayama, Yukiyoshi, Yamaura, Tadashi (1982) Amorphous Silicon Films Prepared by rf-Bias Sputtering. Japanese Journal of Applied Physics, 21. 199 doi:10.7567/jjaps.21s2.199
Tsujino, Jiromaru, Ueoka, Tetsugi, Aoki, Shuichi, Atsumi, Yasuhiko (1982) Studies on the Ultrasonic Vibration Press of Powder –on the Vibration Press with a Vibration Die–. Japanese Journal of Applied Physics, 21. 199 doi:10.7567/jjaps.21s3.199
Hashimoto, Norikazu, Todokoro, Hideo, Fukuhara, Satoru, Senoo, Kooji (1982) Process Characterization of MOS Devices by Scanning Electron Microscopy with 0.5–1 kV Electrons. Japanese Journal of Applied Physics, 21. 199 doi:10.7567/jjaps.21s1.199
Hatano, Hajime, Kanai, Yoshikazu, Ikegami, Yuuji, Fujii, Tsumoru, Saito, Katsutoshi (1982) Ultrasonic Levitation and Positioning of Samples. Japanese Journal of Applied Physics, 21. 202 doi:10.7567/jjaps.21s3.202
Kurata, Hiroyuki, Miyamoto, Hironobu, Hirose, Masataka, Osaka, Yukio (1982) Substitutional Doping of a-SixNi1-x: H. Japanese Journal of Applied Physics, 21. 205 doi:10.7567/jjaps.21s2.205
Harada, Hiroshi, Yakushiji, Hisao, Nishioka, Tadashi, Kotani, Hideo, Hirata, Yoshihiro (1982) Trapped Ar Induced Deformation of Magnetron Sputtered Al Film Overlaid with Plasma SiN Film. Japanese Journal of Applied Physics, 21. 205 doi:10.7567/jjaps.21s1.205
Nagatomo, Takao, Moribe, Shunji, Usui, Masaaki, Omoto, Osamu (1982) Characterization of Amorphous Si: H Films Prepared by rf Planar Magnetron Sputtering. Japanese Journal of Applied Physics, 21. 209 doi:10.7567/jjaps.21s2.209
Nakata, Jyoji, Kajiyama, Kenji (1982) Novel Low Temperature (\lesssim300°C) Annealing of Amorphous Si by Scanned High Energy (∼2.5 MeV) Heavy Ion Beam. Japanese Journal of Applied Physics, 21. 211 doi:10.7567/jjaps.21s1.211
Suzuki, Tohru, Hirose, Masataka, Osaka, Yukio (1982) Exact Determination of Bulk Gap-State Density in a-Si: H. Japanese Journal of Applied Physics, 21. 213 doi:10.7567/jjaps.21s2.213
Taniguchi, Hitoshi, Konagai, Makoto, Lim, Koeng Su, Sichanugrist, Porponth, Komori, Koichiro, Takahashi, Kiyoshi (1982) Junction Properties of nip and pin Amorphous Si Solar Cells Prepared by a Glow Discharge in Pure Silane. Japanese Journal of Applied Physics, 21. 219 doi:10.7567/jjaps.21s2.219
Aizawa, Masuo, Suzuki, Shuichi (1982) (Invited) Chemical Amplification in Biosensors. Japanese Journal of Applied Physics, 21. 219 doi:10.7567/jjaps.21s1.219
Uchida, Yasutaka, Kobayashi, Osamu, Matsumura, Masakiyo (1982) Arc-Discharge Produced Amorphous-Silicon Solar-cells. Japanese Journal of Applied Physics, 21. 225 doi:10.7567/jjaps.21s2.225
Okuyama, Masanori, Seto, Hiroyuki, Kojima, Motohiro, Matsui, Yasushi, Hamakawa, Yoshihiro (1982) Pyroelectric Infrared Sensor Using PbTO3Thin Film. Japanese Journal of Applied Physics, 21. 225 doi:10.7567/jjaps.21s1.225
Ohnishi, Michitoshi, Nishiwaki, Hidenori, Nakashima, Yukio, Nakamura, Noboru, Tsuda, Shinya, Fukatsu, Takeo, Kuwano, Yukinori (1982) Preparation and Photovoltaic Characteristics of a-Si Solar Cells Produced by a Consecutive, Separated Reaction Chamber Method. Japanese Journal of Applied Physics, 21. 231 doi:10.7567/jjaps.21s2.231
Kimata, Masafumi, Denda, Masahiko, Fukumoto, Takaaki, Tsubouchi, Natsuro, Uematsu, Shigeyuki, Shibata, Hiroshi, Higuchi, Takaichi, Saheki, Toshikazu, Tsunoda, Reikichi, Kanno, Toshio (1982) Platinum Silicide Schottky-Barrier IR-CCD Image Sensors. Japanese Journal of Applied Physics, 21. 231 doi:10.7567/jjaps.21s1.231
Terui, Yasuaki, Yoshino, Masaru, Ogura, Mototsugu, Nakayama, Mitsuo, Yoneda, Masato, Chikamura, Takao, Miyata, Yutaka, Horiuchi, Shiro (1982) A CCD Imager Using ZnSe-Zn1-xCdxTe Heterojunction Photoconductor. Japanese Journal of Applied Physics, 21. 237 doi:10.7567/jjaps.21s1.237
Okaniwa, Hiroshi, Nakatani, Kenji, Yano, Mitsuaki, Asano, Mitsuo, Suzuki, Kazutomi (1982) Preparation and Properties of a-Si: H Solar Cells on Organic Polymer Film Substrate. Japanese Journal of Applied Physics, 21. 239 doi:10.7567/jjaps.21s2.239
Hamano, Toshihisa, Ito, Hisao, Nakamura, Takeshi, Ozawa, Takashi, Fuse, Mario, Takenouchi, Mutsuo (1982) An Amorphous Si High Speed Linear Image Sensor. Japanese Journal of Applied Physics, 21. 245 doi:10.7567/jjaps.21s1.245
Warashina, Masatoshi, Ushirokawa, Akio (1982) Difference of Characteristics of a-Si: H Solar Cells between under Illumination and Dark. Japanese Journal of Applied Physics, 21. 247 doi:10.7567/jjaps.21s2.247
Tsuda, Shinya, Nakamura, Noboru, Nakashima, Yukio, Tarui, Hisaki, Nishiwaki, Hidenori, Ohnishi, Michitoshi, Kuwano, Yukinori (1982) Analysis of the Photovoltaic Characteristics of p-i-n a-Si Solar Cells. Japanese Journal of Applied Physics, 21. 251 doi:10.7567/jjaps.21s2.251
Kagawa, Toshiaki, Matsumoto, Nobuo, Kumabe, Kenji (1982) Amorphous Silicon Photoconductive Sensor. Japanese Journal of Applied Physics, 21. 251 doi:10.7567/jjaps.21s1.251
Nara, Yasuo, Matsumura, Masakiyo (1982) Experimental Study of Amorphous Silicon Integrated Circuit. Japanese Journal of Applied Physics, 21. 257 doi:10.7567/jjaps.21s1.257
Okushi, Hideyo, Yamasaki, Satoshi, Kawai, Hiroshi, Hotta, Masahiro, Tanaka, Kazunobu (1982) Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si: H. Japanese Journal of Applied Physics, 21. 259 doi:10.7567/jjaps.21s2.259
Shimomoto, Yasuharu, Tanaka, Yasuo, Yamamoto, Hideaki, Takasaki, Yukio, Sasano, Akira, Tsukada, Toshihisa (1982) Optical and Electrical Properties of Nitrogen Doped a-Si: H Films for Solid-State Image Pickup Devices. Japanese Journal of Applied Physics, 21. 263 doi:10.7567/jjaps.21s1.263
Enomoto, Keiichi, Nishiwaki, Hidenori, Watanabe, Kaneo, Nakashima, Yukio, Tsuda, Shinya, Ohnishi, Michitoshi, Kuwano, Yukinori (1982) Properties and Photovoltaic Characteristics of a-SiC: H Film. Japanese Journal of Applied Physics, 21. 265 doi:10.7567/jjaps.21s2.265
Baji, Toru, Shimomoto, Yasuharu, Matsumaru, Haruo, Koike, Norio, Akiyama, Toshiyuki, Sasano, Akira, Tsukada, Toshihisa (1982) Solid-State Color Image Sensor Using Hydrogenated Amorphous Silicon. Japanese Journal of Applied Physics, 21. 269 doi:10.7567/jjaps.21s1.269
Fukada, Noboru, Imura, Takeshi, Hiraki, Akio, Tawada, Yoshihisa, Tsuge, Kazunori, Okamoto, Hiroaki, Hamakawa, Yoshihiro (1982) Distribution of Electrode Elements near Contacts and Junction Layers in Amorphous Silicon Solar Cell. Japanese Journal of Applied Physics, 21. 271 doi:10.7567/jjaps.21s2.271
Hirose, Masataka (1982) (Invited) Growth and Characterization of Amorphous Hydrogenated Silicon. Japanese Journal of Applied Physics, 21. 275 doi:10.7567/jjaps.21s1.275
Nonomura, Shuichi, Okamoto, Hiroaki, Kida, Hirotsugu, Hamakawa, Yoshihiro (1982) A New Model for Simulating Photocarrier Collection in Amorphous Silicon Solar Cells. Japanese Journal of Applied Physics, 21. 279 doi:10.7567/jjaps.21s2.279
Haruki, Hiromu, Uchida, Yoshiyuki, Sakai, Hiroshi, Nishiura, Masaharu, Kamiyama, Michinari (1982) Analysis of Conversion Efficiency of Large Area a-Si: H Solar Cells. Japanese Journal of Applied Physics, 21. 283 doi:10.7567/jjaps.21s1.283
Fukatsu, Takeo, Sakai, Soichi, Nakayama, Shoichiro, Tsuda, Shinya, Kuwano, Yukinori (1982) Effects of Substrate Surface Condition on a-Si Photovoltaic Characteristics. Japanese Journal of Applied Physics, 21. 287 doi:10.7567/jjaps.21s2.287
Hotta, Sadayoshi, Nishimoto, Naoaki, Tawada, Yoshihisa, Okamoto, Hiroaki, Hamakawa, Yoshihiro (1982) Optimization of GD a-Si: H Film Property for Photovoltaic Device by Means of the Cross Field Plasma Deposition Technique. Japanese Journal of Applied Physics, 21. 289 doi:10.7567/jjaps.21s1.289
Tawada, Yoshihisa, Tsuge, Kazunori, Nishimura, Kunio, Kondo, Masataka, Okamoto, Hiroaki, Hamakawa, Yoshihiro (1982) Characterization of a-SiC: H as a Window Material for p-i-n a-Si Solar Cells. Japanese Journal of Applied Physics, 21. 291 doi:10.7567/jjaps.21s2.291
Nakamura, Genshiro, Sato, Kazuhiko, Yukimoto, Yoshinori (1982) Amorphous Solar Cells Using a-Si: H and a-SiGe: H Films. Japanese Journal of Applied Physics, 21. 297 doi:10.7567/jjaps.21s2.297
Tawada, Yoshihisa, Kondo, Masataka, Okamoto, Hiroaki, Hamakawa, Yoshihiro (1982) Window Effects of Hydrogenated Amorphous Silicon Carbide in a p-i-n a-Si Solar Cell. Japanese Journal of Applied Physics, 21. 297 doi:10.7567/jjaps.21s1.297
(1982) "How to Promote the Photovoltaic Industries?—From the Standpoint of Systems and Applications". Japanese Journal of Applied Physics, 21. 305 doi:10.7567/jjaps.21s2.305
Hanyu, Isamu, Suzuki, Hideo, Hasuo, Shinya, Yamaoka, Toyoshi (1982) A Josephson Latch-Decoder. Japanese Journal of Applied Physics, 21. 307 doi:10.7567/jjaps.21s1.307
Matisoo, Juri (1982) (Invited) Josephson Technology–A Technology for High Performance Computing Systems. Japanese Journal of Applied Physics, 21. 311 doi:10.7567/jjaps.21s1.311
Inamura, Takahiro, Murakami, Toshiaki, Inukai, Takashi, Enomoto, Youichi, Suzuki, Minoru (1982) (Invited) New Materials for Josephson Junction Devices. Japanese Journal of Applied Physics, 21. 313 doi:10.7567/jjaps.21s1.313
Kosaka, Shin, Kojima, Kazuyoshi, Shinoki, Fujitoshi, Shoji, Akira, Hayakawa, Hisao (1982) NbN, Nb Double-Layered Base-Electrode Josephson Junctions. Japanese Journal of Applied Physics, 21. 319 doi:10.7567/jjaps.21s1.319
Yamanaka, Toshiaki, Goto, Toshinari (1982) Fabrication and Properties of High-Current-Density Nb Josephson Junctions. Japanese Journal of Applied Physics, 21. 325 doi:10.7567/jjaps.21s1.325
Sakai, Shigeki, Tateno, Hiroshi (1982) Quasiparticle-Injected Superconducting Weak Link Device. Japanese Journal of Applied Physics, 21. 331 doi:10.7567/jjaps.21s1.331
Kimura, Tatsuya, Kanbe, Hiroshi (1982) (Invited) Improved Avalanche Photodiodes for Long Wavelength Optical Fiber Systems. Japanese Journal of Applied Physics, 21. 339 doi:10.7567/jjaps.21s1.339
Kumabe, Hisao, Tanaka, Toshio, Nita, Shigeyuki, Seiwa, Yoshito, Sogo, Toshio, Takamiya, Saburo (1982) 15 mW Single Mode CW Operation of Crank Structure TJS Laser Diodes at High Temperature. Japanese Journal of Applied Physics, 21. 347 doi:10.7567/jjaps.21s1.347
Okajima, Masaki, Kurihara, Haruki, Iida, Seiji, Watanabe, Yukio, Motegi, Nawoto (1982) Buried Multi-Heterostructure (BMH) GaAlAs Laser. Japanese Journal of Applied Physics, 21. 353 doi:10.7567/jjaps.21s1.353
Mizuishi, Ken-ichi, Hirao, Motohisa, Tsuji, Shinji, Sato, Hitoshi, Nakamura, Michiharu (1982) Reliability of InGaAsP/InP Buried Heterostructure Lasers. Japanese Journal of Applied Physics, 21. 359 doi:10.7567/jjaps.21s1.359
Yamanishi, Masamichi, Suemune, Ikuo, Nonomura, Kazuhiro, Mikoshiba, Nobuo (1982) Characterization of Loss Mechanism in 1.3 µm InGaAsP/InP Laser Diodes by Acoustical and Optical Measurements. Japanese Journal of Applied Physics, 21. 365 doi:10.7567/jjaps.21s1.365
Kawaguchi, Hitoshi (1982) Bistability and Differential Gain in Semiconductor Lasers. Japanese Journal of Applied Physics, 21. 371 doi:10.7567/jjaps.21s1.371
Suemune, Ikuo, Kohno, Motohiro, Yamanishi, Masamichi, Uomi, Kazuhisa (1982) Stable Two-Dimensional Oscillation in a Transverse- Distributed-Feedback Cavity Laser. Japanese Journal of Applied Physics, 21. 377 doi:10.7567/jjaps.21s1.377
Suyama, Takahiro, Sawara, Nobuyuki, Okamoto, Kenji, Hamakawa, Yoshihiro (1982) Multi-Coloring of Thin-Film Electroluminescent Device. Japanese Journal of Applied Physics, 21. 383 doi:10.7567/jjaps.21s1.383
Yamaguchi, Eiichi, Kobayashi, Takeshi (1982) Impact-Ionization of Excitons and Application to Gate-Controlled Bistable Switching. Japanese Journal of Applied Physics, 21. 389 doi:10.7567/jjaps.21s1.389
Sawada, Takayuki, Ishii, Kazuaki, Hasegawa, Hideki (1982) Anodic Al2O3/InP Interface for Application to Enhancement MISFETs. Japanese Journal of Applied Physics, 21. 397 doi:10.7567/jjaps.21s1.397
Matsubara, Kakuei, Yamada, Isao, Takaoka, Hiroshi, Takagi, Toshinori (1982) Film Growth of BeO Using R-ICB Technique and Applications to Electronic Thin Film Devices. Japanese Journal of Applied Physics, 21. 403 doi:10.7567/jjaps.21s1.403
Okuda, Takashi, Ando, Koji, Koshizuka, Naoki (1982) Preparation of Nd3+Doped Gd3Ga5O12Films by Liquid-Phase Epitaxy. Japanese Journal of Applied Physics, 21. 409 doi:10.7567/jjaps.21s1.409
Gamo, Kenji, Inomoto, Yasumasa, Ochiai, Yukinori, Namba, Susumu (1982) B, Sb and Si Liquid Metal Alloy Ion Sources for Submicron Fabrication. Japanese Journal of Applied Physics, 21. 415 doi:10.7567/jjaps.21s1.415
(1982) Panel Discussion; Performance Limitation of Si, III-V and Josephson Junction LSIs. Japanese Journal of Applied Physics, 21. 423 doi:10.7567/jjaps.21s1.423
Mori, Yoshifumi, Sato, Hiromitsu, Ikeda, Masao, Matsuda, Osamu, Kaneko, Kunio, Watanabe, Naozoh (1982) Proton-Isolated Narrow-Stripe Visible Laser Grown by MOCVD. Japanese Journal of Applied Physics, 21. 433 doi:10.7567/jjaps.21s1.433
Ishikawa, Hiroshi, Imai, Hajime, Tanahashi, Toshiyuki, Takusagawa, Masahito, Takahei, Ken-ichi (1982) V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser with Smooth Far Field Pattern and Stable Aging Characteristics. Japanese Journal of Applied Physics, 21. 435 doi:10.7567/jjaps.21s1.435
Kuwahara, Hideo, Imai, Hajime (1982) Intensity Noise of InGaAsP/InP Lasers under the Influence of Reflection and Modulation. Japanese Journal of Applied Physics, 21. 437 doi:10.7567/jjaps.21s1.437
Kawabe, Mitsuo, Matsuura, Nobuyuki, Toda, Kazuro, Inuzuka, Hajime (1982) A New Composition Control Method of AlxGa1-xAs by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 21. 439 doi:10.7567/jjaps.21s1.439
Komiya, Yoshio, Hoh, Koichiro, Murakami, Koichi, Takahashi, Tetsuo, Tarui, Yasuo (1982) Pattern Laser Annealing by a Pulsed Laser. Japanese Journal of Applied Physics, 21. 441 doi:10.7567/jjaps.21s1.441
Itoh, Haruo, Tokiguchi, Katsumi, Warabisako, Terunori, Saitoh, Tadashi, Tokuyama, Takashi (1982) Silicon Solar Cell Fabrication Using a High Speed Junction Processor. Japanese Journal of Applied Physics, 21. 443 doi:10.7567/jjaps.21s1.443
Hata, Ikuro, Takeda, Masashi, Kayanuma, Akio, Kobayashi, Takao, Asano, Katsuaki (1982) An Integrated 16 Bit D/A Converter for PCM Audio Systems. Japanese Journal of Applied Physics, 21. 445 doi:10.7567/jjaps.21s1.445
Okushi, Hideyo, Tokumaru, Yozo, Kawai, Hiroshi, Yamasaki, Satoshi, Oheda, Hidetoshi, Tanaka, Kazunobu (1982) Determination of Energy Dependence of Capture Cross Section at Trap Levels by Isothermal Capacitance Transient Spectroscopy: Application to the Gap States in N-Type a-Si:H. Japanese Journal of Applied Physics, 21. 447 doi:10.7567/jjaps.21s1.447
Morizuka, Kouhei, Adachi, Yoshio, Ikoma, Toshiaki (1982) Application of Electron Beam-Acoustic Microscope to Semiconductors. Japanese Journal of Applied Physics, 21. 449 doi:10.7567/jjaps.21s1.449
Ikeya, Motoji (1982) Electron Spin Resonance of Petrified Woods for Geological Age Assessment. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l28
Yoneda, Yasuharu, Chikaura, Yoshinori (1982) Scattering Tomography. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l31
Kashiwase, Yasuji, Kainuma, Yoshiro, Minoura, Masayuki (1982) A Study of the Diffraction of Thermally Scattered Radiation in a Pyrolytic Graphite Crystal by Means of X-Ray Film and Mössbauer Diffraction. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l34
Oda, Yasukage, Fujii, Genshiro, Nagano, Hiroshi (1982) Diamagnetic Transition due to Proximity Effect in a Fine Multi-Filamentary Nb-Ti Superconductor. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l37
Matsuo, Seitaro, Adachi, Yoshio (1982) Reactive Ion Beam Etching Using a Broad Beam ECR Ion Source. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l4
Funakoshi, Nobuhiro, Fujimori, Susumu, Zembutsu, Sakae, Kasai, Toshio (1982) Pattern Size Dependence of Sensitivity of Inorganic SeGe/Ag Resist. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l40
Banerjee, Ratnabali, Ray, Swati, Barua, A. K. (1982) Properties of Tellurium Doped Vacuum Evaporated CdS Thin Films. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l43
Takenoshita, Hiroshi, Imai, Susumu, Nakau, Tanehiro, Nishira, Masatoshi (1982) Liquid Phase Epitaxial Growth of CuGaTe2on ZnSe from Bi Solution. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l46
Ohsawa, Jun, Ikeda, Kenji, Takahashi, Kazuhisa, Susaki, Wataru (1982) Effects of Arsenic Pressure on GaAs Heat-Treated in Hydrogen. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l49
Saitoh, Yasunao, Yoshihara, Hideo, Watanabe, Iwao (1982) Effects of Photoelectrons and Auger Electrons on Contrast and Resolution in X-Ray Lithography. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l52
Mitachi, Seiko, Kanamori, Terutoshi, Miyashita, Tadashi (1982) Preparation of Low Loss Fluoride Glass Fibers. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l55
Yamaguchi, Toshihisa, Sawada, Shozo, Takashige, Masaaki, Nakamura, Terutaro (1982) Antiferroelectricity and Ferroelectricity in Rb2ZnBr4. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l57
Miida, Rokuro, Hashimoto, Satoshi, Watanabe, Denjiro (1982) New Type of A5B3Structure in Al-Ti and Ga-Ti Systems; Al5Ti3and Ga5Ti3. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l59
Iida, Seishi, Ohki, Shigehisa (1982) Photoinduced Optical Changes in Amorphous Silicon-Carbon Alloy Prepared by Reactive Sputtering in an Atmosphere of Propane. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l62
Tateno, Hiroshi, Sakai, Shigeki (1982) Fluxon Waves on a Josephson Transmission Line. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l7
Tsuchida, Hidemi, Ohtsu, Motoichi, Tako, Toshiharu (1982) Frequency Stabilization of AlGaAs Semiconductor Laser to the Absorption Line of Water Vapor. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l1
Hikita, Makoto, Nakamura, Kiko, Kubo, Shugo, Igarashi, Masaru, Kakuchi, Masami, Kogure, Osamu (1982) Fabrication andI-VCharacteristics of High-TcNb3Ge Microbridges. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l10
Ohnuma, Toshiro, Watanabe, Tsuguhiro, Sanuki, Heiji (1982) Electron Waves below the Electron Plasma Frequency without Boundary Effects. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l13
Kugimiya, Koichi, Fuse, Genshu (1982) Blink Furnace Annealing of Ion-Implanted Silicon. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l16
Kugimiya, Koichi, Fuse, Genshu, Inoue, Kaoru (1982) CW Laser Annealing of Polycrystalline Silicon on SiO2and Effects of Successive Furnace Annealing. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l19
Abe, Masanori, Shono, Keiji, Kobayashi, Kazuo, Gomi, Manabu, Nomura, Shoichiro (1982) Magneto-Optic Kerr Effect in RF Sputtered Co-Cr Film with Perpendicular Anisotropy. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l22
Tatsuyama, Chiei, Ichimura, Shoji, Iwakuro, Hiroaki (1982) Observation of GaSe-SnO2Heterostructure by XPS and AES. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l25
Kishino, Seigô, Matsushita, Yoshiaki, Kanamori, Masaru, Iizuka, Takashi (1982) Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth Behavior. Japanese Journal of Applied Physics, 21. 1-12 doi:10.1143/jjap.21.1
Chamberlain, J. M., Moseley, A. J. (1982) Photoconduction in Metal-Doped GeySe1-yGlasses. Japanese Journal of Applied Physics, 21. 13-17 doi:10.1143/jjap.21.13
Takenoshita, Hiroshi, Nakau, Tanehiro (1982) Heteroepitaxy of CuInS2on ZnSe by LPE Method from In Solution. Japanese Journal of Applied Physics, 21. 18-22 doi:10.1143/jjap.21.18
Matsuura, Makoto, Nishinaga, Tatau, Suzuki, Akira, Yuitoh, Mitsuhiro, Yasuda, Yukio, Nakamura, Tetsuro (1982) Solute Redistribution in Laser Crystallization in Concentrated InAs–GaAs Alloy. Japanese Journal of Applied Physics, 21. 23-27 doi:10.1143/jjap.21.23
Yasutake, Kiyoshi, Umeno, Masataka, Kawabe, Hideaki, Nakayama, Hiroshi, Nishino, Taneo, Hamakawa, Yoshihiro (1982) Oxygen-Related Donors Stable at 700–800°C in CZ–Si Crystals. Japanese Journal of Applied Physics, 21. 28-32 doi:10.1143/jjap.21.28
Kurita, Noriaki, Igasaki, Yasuhiro, Nakamura, Yasuo, Shimaoka, Goro, Mitsuhashi, Hiroji (1982) Structure of Ti–Fe Alloy Films Prepared by Composite-Cathode Sputtering. Japanese Journal of Applied Physics, 21. 33-38 doi:10.1143/jjap.21.33
Kim, Su Chol, Yamaguchi, Satoru, Kataoka, Yoshihide, Iwami, Motohiro, Hiraki, Akio, Satou, Mamoru, Fujimoto, Fuminori (1982) Sputtering Yields of Si and Ni from the Ni1-xSixSystem Studied by Rutherford Backscattering Spectrometry. Japanese Journal of Applied Physics, 21. 39-41 doi:10.1143/jjap.21.39
Ohira, Fumikazu, Itakura, Masayuki (1982) Ellipsometric Measurement of Damage Depth Profiles for Ion Beam Processed Si Surface Layer. Japanese Journal of Applied Physics, 21. 42-46 doi:10.1143/jjap.21.42
Yonenaga, Ichiro, Sumino, Koji (1982) Mechanical Behavior of Czochralski-Silicon Crystals as Affected by Precipitation and Dissolution of Oxygen Atoms. Japanese Journal of Applied Physics, 21. 47-55 doi:10.1143/jjap.21.47
Mizuo, Shoichi, Higuchi, Hisayuki (1982) Effects of Oxidation on Aluminum Diffusion in Silicon. Japanese Journal of Applied Physics, 21. 56-60 doi:10.1143/jjap.21.56
Noguchi, Yasuaki, Teramachi, Yasuaki, Musha, Toshimitsu (1982) Correlation between Frequency Fluctuations of a Quartz Oscillator and Temperature Fluctuations. Japanese Journal of Applied Physics, 21. 61-66 doi:10.1143/jjap.21.61
Tomokage, Hajime, Nakashima, Hiroshi, Hashimoto, Kimio (1982) Note on the Analysis of DLTS and C2-DLTS. Japanese Journal of Applied Physics, 21. 67-70 doi:10.1143/jjap.21.67
Morita, Seizo, Noguchi, Takashi, Takaki, Satoru, Horii, Shinichi, Imai, Syozo, Takeuti, Yosihisa, Mikoshiba, Nobuo (1982) Correlation between Types of Junction and Submillimeter-Wave Responses in Point-Contact Josephson Junctions. Japanese Journal of Applied Physics, 21. 71-76 doi:10.1143/jjap.21.71
Horikoshi, Yoshiji, Kawashima, Minoru, Saito, Hisao (1982) PbSnSeTe–PbSeTe Lattice-Matched Double-Heterostructure Lasers. Japanese Journal of Applied Physics, 21. 77-84 doi:10.1143/jjap.21.77
Abe, Masanori, Nakagawa, Hidenobu, Gomi, Manabu, Nomura, Shoichiro (1982) Film Thickness Allowance and Waveguide Length in 3-Layer Unidirectional Magneto-Optical TE-TM Mode Converter. Japanese Journal of Applied Physics, 21. 85-89 doi:10.1143/jjap.21.85
Nishio, Mitsuhiro, Ogawa, Hiroshi (1982) Chemical Vapor Transport of ZnTe by the Closed-Tube Method and Its Thermodynamic Analysis. Japanese Journal of Applied Physics, 21. 90-93 doi:10.1143/jjap.21.90
Iwakuro, Hiroaki, Tatsuyama, Chiei, Ichimura, Shoji (1982) XPS and AES Studies on the Oxidation of Layered Semiconductor GaSe. Japanese Journal of Applied Physics, 21. 94-99 doi:10.1143/jjap.21.94
Kato, Takamasa, Matsumoto, Takashi, Ishida, Tetsuro (1982) Photoluminescence Processes of Zn-Doped In1-xGaxP with 0.6Japanese Journal of Applied Physics, 21. 100-103 doi:10.1143/jjap.21.100
Yamaguchi, Eiichi, Kobayashi, Takeshi (1982) Optically-Gated InP-MISFET: A New High-Gain Optical Detector. Japanese Journal of Applied Physics, 21. 104-108 doi:10.1143/jjap.21.104
Murase, Kenya (1982) Monte Carlo Calculation on Neutral Gas Transport and Impurity Production in a Toroidal Plasma. Japanese Journal of Applied Physics, 21. 109-113 doi:10.1143/jjap.21.109
Saito, Hirobumi, Sato, Kohnosuke, Sekiguchi, Tadashi (1982) Encounter Interactions of Counter-Streaming Laser-Produced Plasmas in Magnetic Field. Japanese Journal of Applied Physics, 21. 114-124 doi:10.1143/jjap.21.114
Ikuta, Kazunari (1982) Plasma Focus Breeder. Japanese Journal of Applied Physics, 21. 125-127 doi:10.1143/jjap.21.125
Yoshimura, Tetsuzo, Watanabe, Masaki, Kiyota, Kohei, Tanaka, Masao (1982) Electrolysis in Electrochromic Devices Consisting of WO3and MgF2Thin Films. Japanese Journal of Applied Physics, 21. 128-132 doi:10.1143/jjap.21.128
Matsuta, Morihiro, Kito, Kanji (1982) Development of a Gloss Tester for Paint Coatings. Japanese Journal of Applied Physics, 21. 133-136 doi:10.1143/jjap.21.133
Ishii, Shozo, Yokoyama, Takayuki, Hayashi, Izumi (1982) Optically-Coupled Floating Double Probe for Local Electric Field Measurements in Pinch Discharge Plasmas. Japanese Journal of Applied Physics, 21. 137-139 doi:10.1143/jjap.21.137
Kadomatsu, Hideoki, Tohma, Kiyokazu, Kurisu, Makio, Fujiwara, Hiroshi (1982) Magnetization Measurements at High Pressures and Low Temperatures. Japanese Journal of Applied Physics, 21. 140-144 doi:10.1143/jjap.21.140
Ichikawa, Masakazu, Hayakawa, Kazunobu (1982) Micro-Probe Reflection High-Energy Electron Diffraction Technique. I. Determination of Crystallographic Orientations of Polycrystal-Silicon Surfaces. Japanese Journal of Applied Physics, 21. 145-153 doi:10.1143/jjap.21.145
Ichikawa, Masakazu, Hayakawa, Kazunobu (1982) Micro-Probe Reflection High-Energy Electron Diffraction Technique. II. Observation of Aluminum Epitaxial Growth on a Polycrystal-Silicon Surface by Vacuum Evaporation. Japanese Journal of Applied Physics, 21. 154-163 doi:10.1143/jjap.21.154
Kubota, Yusuke, Uramoto, Jōshin, Miyahara, Akira (1982) Long-Pulse Ion Source Using Filament-Free LaB6Multi-Cathodes. Japanese Journal of Applied Physics, 21. 164-167 doi:10.1143/jjap.21.164
Kurogi, Yukinori, Kamimura, Kazuo (1982) Molybdenum Etching Using CCl4/O2Mixture Gas. Japanese Journal of Applied Physics, 21. 168-172 doi:10.1143/jjap.21.168
Hasama, Toshifumi, Fukuda, Kuniya (1982) Extreme Ultraviolet Spectra of Emission from Plasma Focus. II. ArXI to ArXV Ion Lines from 130 to 230 Å. Japanese Journal of Applied Physics, 21. 173-177 doi:10.1143/jjap.21.173
Fukuda, Kuniya, Hasama, Toshifumi (1982) Extreme Ultraviolet Spectra of Emission from Plasma Focus. III. AlV to IX and SiVI to X Ion Lines from 60 to 350 Å. Japanese Journal of Applied Physics, 21. 178-185 doi:10.1143/jjap.21.178
Matsushima, Norio, Akiyama, Morio, Terayama, Yoshio (1982) Quantitative Analysis of the Orientation of Mineral in Bone from Small-Angle X-Ray Scattering Patterns. Japanese Journal of Applied Physics, 21. 186-189 doi:10.1143/jjap.21.186
Seki, Hidehiro, Shishido, Chiyoko, Yasui, Shigeo, Uchida, Tatsuo (1982) Dichroic Azo Dyes for Guest-Host Liquid-Crystal Cell. Japanese Journal of Applied Physics, 21. 191-192 doi:10.1143/jjap.21.191
Strzyzewski, P. (1982) Deposition Profile Calculation for Sputtering with Two Facing Targets. Japanese Journal of Applied Physics, 21. 192-193 doi:10.1143/jjap.21.192
Nohara, Akira, Yonezawa, Noboru, Imura, Toru (1982) Stress-Extension Behavior of Copper-Tin Alloy Whiskers. Japanese Journal of Applied Physics, 21. 194-195 doi:10.1143/jjap.21.194
Hozumi, Naohiro, Takao, Toshiyuki, Ohki, Yoshimichi (1982) Dielectric Loss Measurement of Plasma Polymerized Ethylene Films in Vacuo and Effect of Hydrogen Treatment. Japanese Journal of Applied Physics, 21. 195-196 doi:10.1143/jjap.21.195
Sugimoto, Mitsuo, Hiratsuka, Nobuyuki (1982) Magnetic Properties of Amorphous Spinel Ferrites. Japanese Journal of Applied Physics, 21. 197-198 doi:10.1143/jjap.21.197
Horikoshi, Yoshiji, Kawashima, Minoru, Saito, Hisao (1982) Evidence of Total Reflection Mode Oscillation in PbSnSeTe–PbSeTe Double-Heterostructure Lasers. Japanese Journal of Applied Physics, 21. 198-199 doi:10.1143/jjap.21.198
Hamamoto, Makoto, Maeda, Mitsuo, Muraoka, Katsunori, Akazaki, Masanori (1982) Measurement of Velocity Distribution Function of Metal Atoms by Laser Resonance Scattering. Japanese Journal of Applied Physics, 21. 200-201 doi:10.1143/jjap.21.200
Kobayashi, Naoki, Horikoshi, Yoshiji (1982) Pseudoquaternary Phase Diagram Calculation of In1-xGaxAs1-ySbyQuaternary System. Japanese Journal of Applied Physics, 21. 201-202 doi:10.1143/jjap.21.201
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See Also

These are possibly similar items as determined by title/reference text matching only.

(2011) Japanese Journal of Applied Physics Vol. 50. Japan Society of Applied Physics
(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics
(1988) Japanese Journal of Applied Physics Vol. 27. Japan Society of Applied Physics
(1989) Japanese Journal of Applied Physics Vol. 28. Japan Society of Applied Physics
(2006) Japanese Journal of Applied Physics Vol. 45. Japan Society of Applied Physics
(2007) Japanese Journal of Applied Physics Vol. 46. Japan Society of Applied Physics
(2008) Japanese Journal of Applied Physics Vol. 47. Japan Society of Applied Physics
(2009) Japanese Journal of Applied Physics Vol. 48. Japan Society of Applied Physics
(2010) Japanese Journal of Applied Physics Vol. 49. Japan Society of Applied Physics
(1962) Japanese Journal of Applied Physics Vol. 1. Japan Society of Applied Physics
(1963) Japanese Journal of Applied Physics Vol. 2. Japan Society of Applied Physics
 
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