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Komiya, Yoshio, Hoh, Koichiro, Murakami, Koichi, Takahashi, Tetsuo, Tarui, Yasuo (1982) Pattern Laser Annealing by a Pulsed Laser. Japanese Journal of Applied Physics, 21. 441 doi:10.7567/jjaps.21s1.441

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Reference TypeJournal (article/letter/editorial)
TitlePattern Laser Annealing by a Pulsed Laser
JournalJapanese Journal of Applied Physics
AuthorsKomiya, YoshioAuthor
Hoh, KoichiroAuthor
Murakami, KoichiAuthor
Takahashi, TetsuoAuthor
Tarui, YasuoAuthor
Year1982 (January 1)Volume21
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.21s1.441Search in ResearchGate
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Mindat Ref. ID14986002Long-form Identifiermindat:1:5:14986002:6
GUID0
Full ReferenceKomiya, Yoshio, Hoh, Koichiro, Murakami, Koichi, Takahashi, Tetsuo, Tarui, Yasuo (1982) Pattern Laser Annealing by a Pulsed Laser. Japanese Journal of Applied Physics, 21. 441 doi:10.7567/jjaps.21s1.441
Plain TextKomiya, Yoshio, Hoh, Koichiro, Murakami, Koichi, Takahashi, Tetsuo, Tarui, Yasuo (1982) Pattern Laser Annealing by a Pulsed Laser. Japanese Journal of Applied Physics, 21. 441 doi:10.7567/jjaps.21s1.441
In(1982) Japanese Journal of Applied Physics Vol. 21. Japan Society of Applied Physics

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Komiya, Yoshio, Hoh, Koichiro, Murakami, Koichi, Takahashi, Tetsuo, Tarui, Yasuo (1981) Pattern Laser Annealing by a Pulsed Laser. Japanese Journal of Applied Physics, 20 (10) doi:10.1143/jjap.20.l749
Murakami, Koichi, Takahashi, Tetsuo, Koyanagi, Tadamasa, Hoh, Koichiro, Komiya, Yoshio, Tarui, Yasuo (1982) Thermal Analysis and Experimental Evaluation of Melting Threshold Energy of Si Thin Film Structure in Laser Annealing. Japanese Journal of Applied Physics, 21. 879-884 doi:10.1143/jjap.21.879
Hoh, Koichiro (1981) Photoacoustic Effect in Laser Annealing. Japanese Journal of Applied Physics, 20. 279 doi:10.7567/jjaps.20s3.279
Tarui, Yasuo, Komiya, Yoshio, Sakamoto, Tsunenori, Iida, Hideyo, Shoji, Akira (1976) Monolithic Passivated Stripe Geometry Double Heterostructure Injection Lasers by Selective Chemical Etching. Japanese Journal of Applied Physics, 15. 293 doi:10.7567/jjaps.15s1.293
Kobayashi, Yutaka, Ikeda, Takahide, Nakamura, Minoru, Suzuki, Takaya (1982) Improvement of Characteristics in SOS/MOSFETs by Laser Annealing. Japanese Journal of Applied Physics, 21. 181 doi:10.7567/jjaps.21s1.181
Hoh, Koichiro, Koyama, Hiroshi, Uda, Keiichiro, Miura, Yoshio (1980) Incorporation of Oxygen into Silicon during Pulsed-Laser Irradiation. Japanese Journal of Applied Physics, 19 (7) doi:10.1143/jjap.19.l375
Tarui, Yasuo (1980) (Invited) Basic Technology for VLSI. Japanese Journal of Applied Physics, 19. 15 doi:10.7567/jjaps.19s1.15
Poate, J. M. (1980) (Invited) Mechanisms of Laser Annealing. Japanese Journal of Applied Physics, 19. 115 doi:10.7567/jjaps.19s1.115
White, C. W. (1983) (Invited) Laser Annealing of Semiconductors. Japanese Journal of Applied Physics, 22. 191 doi:10.7567/jjaps.22s1.191
Vechten, J. A. Van (1982) Electronic Dilation of Si during Pulsed Laser Annealing. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l125
Fujita, Goro, Kawashima, Tetsuji, Watanabe, Tetsu, Aoki, Yoshio (1989) A Magneto-Optical Recording Method of Magnetic Field Modulation with Pulsed Laser Irradiation. Japanese Journal of Applied Physics, 28. 329 doi:10.7567/jjaps.28s3.329
 
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