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Shen, Jingxiang, Kitamura, Noboru, Kakehi, Masahiro, Wada, Takao (1982) Electrical and Photoelectrical Characterization of n·GaxAl1-xSb–p·GaSb Heterojunction. Japanese Journal of Applied Physics, 21. 1053-1055 doi:10.1143/jjap.21.1053

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Reference TypeJournal (article/letter/editorial)
TitleElectrical and Photoelectrical Characterization of n·GaxAl1-xSb–p·GaSb Heterojunction
JournalJapanese Journal of Applied Physics
AuthorsShen, JingxiangAuthor
Kitamura, NoboruAuthor
Kakehi, MasahiroAuthor
Wada, TakaoAuthor
Year1982 (July 20)Volume21
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.21.1053Search in ResearchGate
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Mindat Ref. ID14985260Long-form Identifiermindat:1:5:14985260:1
GUID0
Full ReferenceShen, Jingxiang, Kitamura, Noboru, Kakehi, Masahiro, Wada, Takao (1982) Electrical and Photoelectrical Characterization of n·GaxAl1-xSb–p·GaSb Heterojunction. Japanese Journal of Applied Physics, 21. 1053-1055 doi:10.1143/jjap.21.1053
Plain TextShen, Jingxiang, Kitamura, Noboru, Kakehi, Masahiro, Wada, Takao (1982) Electrical and Photoelectrical Characterization of n·GaxAl1-xSb–p·GaSb Heterojunction. Japanese Journal of Applied Physics, 21. 1053-1055 doi:10.1143/jjap.21.1053
In(1982) Japanese Journal of Applied Physics Vol. 21. Japan Society of Applied Physics


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