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Takagishi, Shigenori, Mori, Hideki (1983) Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVD. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l795

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Reference TypeJournal (article/letter/editorial)
TitleEffect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVD
JournalJapanese Journal of Applied Physics
AuthorsTakagishi, ShigenoriAuthor
Mori, HidekiAuthor
Year1983 (December 20)Volume22
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.22.l795Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14986816Long-form Identifiermindat:1:5:14986816:9
GUID0
Full ReferenceTakagishi, Shigenori, Mori, Hideki (1983) Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVD. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l795
Plain TextTakagishi, Shigenori, Mori, Hideki (1983) Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVD. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l795
In(1983) Japanese Journal of Applied Physics Vol. 22. Japan Society of Applied Physics

See Also

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Mori, Hideki, Takagishi, Shigenori (1984) Influence of H2Overpressure on the Properties of GaAs Grown by Low-Pressure MOCVD. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l877
Takagishi, Shigenori, Mori, Hideki (1984) Epitaxial Growth of High-Purity GaAs by Low-Pressure MOCVD. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l100
Kamon, Koichi, Takagishi, Shigenori, Mori, Hideki (1986) Selective Embedded Growth of AlxGa1-xAs by Low-Pressure Organometallic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l10
Maluenda, J., Frijlink, P. M. (1983) Modulation Doped GaAs-Ga1-xAlxAs Heterostructures Grown by Atmospheric Pressure MOVPE. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l127
Takagishi, Shigenori, Yao, Hideki, Mori, Hirotaro (1992) Surface defects of GaAs epitaxial layers grown by low-pressure OMVPE. Journal of Crystal Growth, 123 (1). 203-212 doi:10.1016/0022-0248(92)90025-e
Kimura, Kōzō, Takagishi, Shigenori, Horiguchi, Seishi, Kamon, Koichi, Mihara, Minoru, Ishii, Makoto (1986) Low-Pressure OMVPE of GaAs Using Triethylgallium. Japanese Journal of Applied Physics, 25. 1393-1396 doi:10.1143/jjap.25.1393
Yasuda, Kazumitsu, Murota, Junichi (1983) Molybdenum Film Formation by Low Pressure Chemical Vapor Deposition. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l615
Sato, Kiyotaka, Togura, Kenji (1990) One-Step Growth of GaAs Layers on Si Substrates by Low-Pressure MOCVD. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1735
Kobayashi, Michihiro, Yokoyama, Teruo, Narita, Shin-ichiro (1983) Photoluminescence Investigation of Donor-Level Deepening in GaAs under Hydrostatic Pressure. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l612
Ogura, Mototsugu, Mizuta, Masashi, Hase, Nobuyasu, Kukimoto, Hiroshi (1983) Deep Levels in InP Grown by MOCVD. Japanese Journal of Applied Physics, 22. 658-662 doi:10.1143/jjap.22.658
Endoh, Yasuyuki, Kawakami, Yoichi, Taguchi, Tsunemasa, Hiraki, Akio (1988) Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD Method. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l2199
 
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