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Maluenda, J., Frijlink, P. M. (1983) Modulation Doped GaAs-Ga1-xAlxAs Heterostructures Grown by Atmospheric Pressure MOVPE. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l127

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Reference TypeJournal (article/letter/editorial)
TitleModulation Doped GaAs-Ga1-xAlxAs Heterostructures Grown by Atmospheric Pressure MOVPE
JournalJapanese Journal of Applied Physics
AuthorsMaluenda, J.Author
Frijlink, P. M.Author
Year1983 (March 20)Volume22
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.22.l127Search in ResearchGate
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Mindat Ref. ID14986556Long-form Identifiermindat:1:5:14986556:4
GUID0
Full ReferenceMaluenda, J., Frijlink, P. M. (1983) Modulation Doped GaAs-Ga1-xAlxAs Heterostructures Grown by Atmospheric Pressure MOVPE. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l127
Plain TextMaluenda, J., Frijlink, P. M. (1983) Modulation Doped GaAs-Ga1-xAlxAs Heterostructures Grown by Atmospheric Pressure MOVPE. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l127
In(1983) Japanese Journal of Applied Physics Vol. 22. Japan Society of Applied Physics

See Also

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Frijlink, P. M., Maluenda, J. (1982) MOVPE Growth of Ga1-xAlxAs-GaAs Quantum Well Heterostructures. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l574
Erman, M., Frijlink, P. M. (1983) Interface analysis by spectroscopic ellipsometry of Ga1−xAlxAs‐GaAs heterojunctions grown by metal organic vapor phase epitaxy. Applied Physics Letters, 43 (3). 285-287 doi:10.1063/1.94328
Takagishi, Shigenori, Mori, Hideki (1983) Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVD. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l795
Takahashi, Yasuhito, Soga, Tetsuo, Sakai, Shiro, Umeno, Masayoshi, Hattori, Shuzo (1983) Solid Composition and Growth Rate of Ga1-xAlxAs Grown Epitaxially by MOCVD. Japanese Journal of Applied Physics, 22. 1357-1360 doi:10.1143/jjap.22.1357
Hiyamizu, Satoshi, Saito, Junji, Nanbu, Kazuo, Ishikawa, Tomonori (1983) Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l609
Makimoto, Toshiki, Chang, Shi Shya (1992) Carbon Modulation-Doped P-AlGaAs/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l797
Makimoto, Toshiki, Kobayashi, Naoki, Horikoshi, Yoshiji (1986) Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l513
Itoh, Tadatsugu, Nomura, Masahiro (1983) Carrier Depletion in Sulfur Doped Epitaxial GaAs Layer by Boron Ion Implantation. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l389
Imamura, Yoshihiro, Osaka, Jiro (1983) Deep Electron Traps in Undoped Semi-Insulating GaAs Grown by the Liquid Encapsulated Czochralski Method. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l333
Suleman, M., Rashid, Y. (1983) Surface Resonances in GaAs(100) Surface. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l569
Matsushita, Koichi, Sugiyama, Yoshihiro, Igarashi, Seiji, Hariu, Takashi, Shibata, Yukio (1983) Heavily Te-Doped GaAs Layers by Plasma-Assisted Epitaxy. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l602
 
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