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Erman, M., Frijlink, P. M. (1983) Interface analysis by spectroscopic ellipsometry of Ga1−xAlxAs‐GaAs heterojunctions grown by metal organic vapor phase epitaxy. Applied Physics Letters, 43 (3). 285-287 doi:10.1063/1.94328

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Reference TypeJournal (article/letter/editorial)
TitleInterface analysis by spectroscopic ellipsometry of Ga1−xAlxAs‐GaAs heterojunctions grown by metal organic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsErman, M.Author
Frijlink, P. M.Author
Year1983 (August)Volume43
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.94328Search in ResearchGate
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Mindat Ref. ID8472585Long-form Identifiermindat:1:5:8472585:7
GUID0
Full ReferenceErman, M., Frijlink, P. M. (1983) Interface analysis by spectroscopic ellipsometry of Ga1−xAlxAs‐GaAs heterojunctions grown by metal organic vapor phase epitaxy. Applied Physics Letters, 43 (3). 285-287 doi:10.1063/1.94328
Plain TextErman, M., Frijlink, P. M. (1983) Interface analysis by spectroscopic ellipsometry of Ga1−xAlxAs‐GaAs heterojunctions grown by metal organic vapor phase epitaxy. Applied Physics Letters, 43 (3). 285-287 doi:10.1063/1.94328
In(1983, August) Applied Physics Letters Vol. 43 (3) AIP Publishing

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Maluenda, J., Frijlink, P. M. (1983) Modulation Doped GaAs-Ga1-xAlxAs Heterostructures Grown by Atmospheric Pressure MOVPE. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l127
Erman, M., Vodjdani, N., Theeten, J. B., Cabanié, J. P. (1983) Low loss waveguides grown on GaAs using localized vapor phase epitaxy. Applied Physics Letters, 43 (10). 894-895 doi:10.1063/1.94196
Kelting, K., Koehler, K., Zwicknagl, P. (1986) Luminescence of Ga1−xAlxAs/GaAs single quantum wells grown by liquid phase epitaxy. Applied Physics Letters, 48 (2). 157-159 doi:10.1063/1.96929
Allenson, M., Bass, S. J. (1976) GaAs reflection photocathodes grown by metal alkyl vapor phase epitaxy. Applied Physics Letters, 28 (3). 113-115 doi:10.1063/1.88674
Ginoudi, A., Paloura, E. C., Frangis, N. (1994) Performance of GaxIn1−xP/GaAs heterojunctions grown by metal‐organic molecular‐beam epitaxy and metal‐organic vapor‐phase epitaxy. Journal of Applied Physics, 75 (6). 2980-2987 doi:10.1063/1.356995
Ben Sedrine, Nebiha, Moussa, Imed, Fitouri, Hedi, Rebey, Ahmed, El Jani, Belgacem, Chtourou, Radhouane (2009) Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy. Applied Physics Letters, 95 (1). 11910pp. doi:10.1063/1.3167359
Kirchner, P. D., Woodall, J. M., Freeouf, J. L., Pettit, G. D. (1981) Volatile metal‐oxide incorporation in layers of GaAs, Ga1−xAlxAs and related compounds grown by molecular beam epitaxy. Applied Physics Letters, 38 (6). 427-429 doi:10.1063/1.92384
Matsumoto, Takashi, Bhattacharya, Pallab K., Ludowise, M. J. (1983) Interface states in GaAs/AlxGa1−xAs heterostructures grown by organometallic vapor phase epitaxy. Applied Physics Letters, 42 (1). 52-54 doi:10.1063/1.93770
Parayanthal, P., Pollak, Fred H., Woodall, J. M. (1982) Raman scattering characterization of Ga1−xAlxAs/GaAs heterojunctions: Epilayer and interface. Applied Physics Letters, 41 (10). 961-963 doi:10.1063/1.93356
Rupprecht, H., Woodall, J. M., Pettit, G. D. (1967) EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY. Applied Physics Letters, 11 (3). 81-83 doi:10.1063/1.1755045
Roth, A. P., Charbonneau, S., Goodchild, R. G. (1983) Residual shallow acceptors in GaAs layers grown by metal‐organic vapor phase epitaxy. Journal of Applied Physics, 54 (9). 5350-5357 doi:10.1063/1.332712
 
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