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Kelting, K., Koehler, K., Zwicknagl, P. (1986) Luminescence of Ga1−xAlxAs/GaAs single quantum wells grown by liquid phase epitaxy. Applied Physics Letters, 48 (2). 157-159 doi:10.1063/1.96929

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Reference TypeJournal (article/letter/editorial)
TitleLuminescence of Ga1−xAlxAs/GaAs single quantum wells grown by liquid phase epitaxy
JournalApplied Physics Letters
AuthorsKelting, K.Author
Koehler, K.Author
Zwicknagl, P.Author
Year1986 (January 13)Volume48
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.96929Search in ResearchGate
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Mindat Ref. ID8477477Long-form Identifiermindat:1:5:8477477:4
GUID0
Full ReferenceKelting, K., Koehler, K., Zwicknagl, P. (1986) Luminescence of Ga1−xAlxAs/GaAs single quantum wells grown by liquid phase epitaxy. Applied Physics Letters, 48 (2). 157-159 doi:10.1063/1.96929
Plain TextKelting, K., Koehler, K., Zwicknagl, P. (1986) Luminescence of Ga1−xAlxAs/GaAs single quantum wells grown by liquid phase epitaxy. Applied Physics Letters, 48 (2). 157-159 doi:10.1063/1.96929
In(1986, January) Applied Physics Letters Vol. 48 (2) AIP Publishing

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Rupprecht, H., Woodall, J. M., Pettit, G. D. (1967) EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY. Applied Physics Letters, 11 (3). 81-83 doi:10.1063/1.1755045
Erman, M., Frijlink, P. M. (1983) Interface analysis by spectroscopic ellipsometry of Ga1−xAlxAs‐GaAs heterojunctions grown by metal organic vapor phase epitaxy. Applied Physics Letters, 43 (3). 285-287 doi:10.1063/1.94328
Alexandre, F., Lievin, J.L., Meynadier, M.H., Delalande, C. (1986) GaAs/Ga1-xAlxAs and Ga1-xAlxAs/GaAs heterointerfaces grown by molecular beam epitaxy. Surface Science Letters, 168 (1). doi:10.1016/0167-2584(86)90465-2
Tsang, W. T., Miller, R. C. (1986) Very high quality single and multiple GaAs quantum wells grown by chemical beam epitaxy. Applied Physics Letters, 48 (19). 1288-1290 doi:10.1063/1.97006
Petroff, P. M., Weisbuch, C., Dingle, R., Gossard, A. C., Wiegmann, W. (1981) Luminescence properties of GaAs‐Ga1−xAlxAs double heterostructures and multiquantum‐well superlattices grown by molecular beam epitaxy. Applied Physics Letters, 38 (12). 965-968 doi:10.1063/1.92237
Botez, Dan, Tsang, Won Tien, Wang, Shyh (1976) Growth characteristics of GaAs‐Ga1−xAlxAs structures fabricated by liquid‐phase epitaxy over preferentially etched channels. Applied Physics Letters, 28 (4). 234-237 doi:10.1063/1.88710
Botez, Dan, Figueroa, Luis, Wang, Shyh (1976) Optically pumped GaAs‐Ga1−xAlxAs half‐ring laser fabricated by liquid‐phase epitaxy over chemically etched channels. Applied Physics Letters, 29 (8). 502-504 doi:10.1063/1.89138
Alexandre, F., Lievin, J.L., Meynadier, M.H., Delalande, C. (1986) GaAs/Ga1−xAlxAs and Ga1−xAlxAs/GaAs heterointerfaces grown by molecular beam epitaxy. Surface Science, 168 (1). 454-461 doi:10.1016/0039-6028(86)90875-7
El Jani, B., Köhler, K., N’Guessan, K., Bel Hadj, A., Gibart, P. (1988) Shallow and deep donors inn‐type Ga1−xAlxAs: Sn grown by metalorganic vapor‐phase epitaxy. Journal of Applied Physics, 63 (9). 4518-4523 doi:10.1063/1.340149
Tsui, R. K., Kramer, G. D., Curless, J. A., Peffley, M. S. (1986) Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates. Applied Physics Letters, 48 (14). 940-942 doi:10.1063/1.96665
Vassilieff, Georges, Saint‐Cricq, Béatrice (1983) Zn incorporation in Ga1−xAlxAs grown by liquid phase epitaxy and its electrical properties. Journal of Applied Physics, 54 (8). 4581-4585 doi:10.1063/1.332660
 
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