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Tsui, R. K., Kramer, G. D., Curless, J. A., Peffley, M. S. (1986) Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates. Applied Physics Letters, 48 (14). 940-942 doi:10.1063/1.96665

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Reference TypeJournal (article/letter/editorial)
TitleAl0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates
JournalApplied Physics Letters
AuthorsTsui, R. K.Author
Kramer, G. D.Author
Curless, J. A.Author
Peffley, M. S.Author
Year1986 (April 7)Volume48
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.96665Search in ResearchGate
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Mindat Ref. ID8477219Long-form Identifiermindat:1:5:8477219:2
GUID0
Full ReferenceTsui, R. K., Kramer, G. D., Curless, J. A., Peffley, M. S. (1986) Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates. Applied Physics Letters, 48 (14). 940-942 doi:10.1063/1.96665
Plain TextTsui, R. K., Kramer, G. D., Curless, J. A., Peffley, M. S. (1986) Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates. Applied Physics Letters, 48 (14). 940-942 doi:10.1063/1.96665
In(1986, April) Applied Physics Letters Vol. 48 (14) AIP Publishing

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Tsui, R. K., Curless, J. A., Kramer, G. D., Peffley, M. S., Wicks, G. W. (1986) Properties of AlxGa1−xAs (xAl≂0.3) grown by molecular‐beam epitaxy on misoriented substrates. Journal of Applied Physics, 59 (5). 1508-1512 doi:10.1063/1.336456
Tsui, R. K., Curless, J. A., Kramer, G. D., Peffley, M. S., Rode, D. L. (1985) Effects of substrate misorientation on the properties of (Al, Ga)As grown by molecular beam epitaxy. Journal of Applied Physics, 58 (7). 2570-2572 doi:10.1063/1.335884
Tischler, M. A., Anderson, N. G., Bedair, S. M. (1986) Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy. Applied Physics Letters, 49 (18). 1199-1200 doi:10.1063/1.97413
Colocci, M., Gurioli, M., Vinattieri, A., Deparis, C., Massies, J., Neu, G. (1990) Time‐resolved luminescence of GaAs/AlGaAs heterostructures grown by molecular beam epitaxy on misoriented substrates. Applied Physics Letters, 57 (8). 783-785 doi:10.1063/1.103419
Leopold, D. J., Ballingall, J. M., Wroge, M. L. (1986) Photoluminescence in CdTe grown on GaAs substrates by molecular beam epitaxy. Applied Physics Letters, 49 (21). 1473-1474 doi:10.1063/1.97624
Ballingall, J. M., Leopold, D. J., Wroge, M. L., Peterman, D. J., Morris, B. J., Broerman, J. G. (1986) HgTe‐CdTe superlattices grown on GaAs (100) oriented substrates by molecular beam epitaxy. Applied Physics Letters, 49 (14). 871-873 doi:10.1063/1.97520
Vandenberg, J. M., Hamm, R. A., Macrander, A. T., Panish, M. B., Temkin, H. (1986) Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy. Applied Physics Letters, 48 (17). 1153-1155 doi:10.1063/1.96454
Zhang, G., Nappi, J., Pessa, M. (1994) GaAs/GaInAsP quantum well lasers grown by gas‐source molecular beam epitaxy. Applied Physics Letters, 64 (8). 1009-1011 doi:10.1063/1.110953
Liu, D. G., Lee, C. P., Chang, K. H., Wu, J. S., Liou, D. C. (1990) Delta‐doped quantum well structures grown by molecular beam epitaxy. Applied Physics Letters, 57 (18). 1887-1888 doi:10.1063/1.104001
Chong, Tow C., Fonstad, Clifton G. (1987) Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 51 (4). 221-223 doi:10.1063/1.98481
Higashiwaki, M., Yamamoto, M., Shimomura, S., Hiyamizu, S. (1997) Highly uniform and high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. Applied Physics Letters, 71 (14). 2005-2007 doi:10.1063/1.119769
 
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