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Chong, Tow C., Fonstad, Clifton G. (1987) Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 51 (4). 221-223 doi:10.1063/1.98481

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Reference TypeJournal (article/letter/editorial)
TitleLow‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsChong, Tow C.Author
Fonstad, Clifton G.Author
Year1987 (July 27)Volume51
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.98481Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482053Long-form Identifiermindat:1:5:8482053:2
GUID0
Full ReferenceChong, Tow C., Fonstad, Clifton G. (1987) Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 51 (4). 221-223 doi:10.1063/1.98481
Plain TextChong, Tow C., Fonstad, Clifton G. (1987) Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 51 (4). 221-223 doi:10.1063/1.98481
In(1987, July) Applied Physics Letters Vol. 51 (4) AIP Publishing

See Also

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Burns, Geoffrey F., Blanck, Hervé, Fonstad, Clifton G. (1990) Low‐threshold GaAs/AlGaAs graded‐index separate confinement heterostructure lasers grown by molecular beam epitaxy on oxide‐masked Si substrates. Applied Physics Letters, 56 (25). 2499-2501 doi:10.1063/1.102870
London, Joanna M., Postigo, Pablo A., Fonstad, Clifton G. (1999) Quantum well heterostructures grown by molecular beam epitaxy on silicon-on-gallium arsenide substrates. Applied Physics Letters, 75 (22). 3452-3454 doi:10.1063/1.125293
Wu, Yao‐Hwa, Werner, Michael, Wang, Shyh (1984) Channeled‐substrate GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 45 (6). 606-608 doi:10.1063/1.95326
DenBaars, S. P., Beyler, C. A., Hariz, A., Dapkus, P. D. (1987) GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy. Applied Physics Letters, 51 (19). 1530-1532 doi:10.1063/1.98625
Miyazawa, Sei-ichi, Sekiguchi, Yoshinobu, Mizutani, Natsuhiko (1991) Threshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1935
Li, Wei, Jouhti, Tomi, Peng, Chang Si, Konttinen, Janne, Laukkanen, Pekka, Pavelescu, Emil-Mihai, Dumitrescu, Mihail, Pessa, Markus (2001) Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy. Applied Physics Letters, 79 (21). 3386-3388 doi:10.1063/1.1418455
Chen, H. Z., Ghaffari, A., Morkoç, H., Yariv, A. (1987) Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities. Applied Physics Letters, 51 (25). 2094-2096 doi:10.1063/1.98958
Lee, Henry P., Liu, Xiaoming, Wang, Shyh (1990) Double‐heterostructure GaAs/AlGaAs lasers on Si substrates with reduced threshold current and built‐in index guiding by selective‐area molecular beam epitaxy. Applied Physics Letters, 56 (11). 1014-1016 doi:10.1063/1.102602
Liou, K.‐Y., Tsang, W. T., Choa, F. S., Burrows, E. C., Raybon, G., Burrus, C. A. (1991) Low‐threshold and high‐temperature operation of 1.55‐μm self‐aligned ridge‐waveguide multiple‐quantum‐well lasers grown by chemical‐beam epitaxy. Applied Physics Letters, 59 (26). 3381-3383 doi:10.1063/1.105681
Zhang, G., Nappi, J., Pessa, M. (1994) GaAs/GaInAsP quantum well lasers grown by gas‐source molecular beam epitaxy. Applied Physics Letters, 64 (8). 1009-1011 doi:10.1063/1.110953
Hayakawa, T., Suyama, T., Takahashi, K., Kondo, M., Yamamoto, S., Hijikata, T. (1987) Low‐threshold room‐temperature cw operation of (AlGaAs)m(GaAs)nsuperlattice quantum well lasers emitting at ∼680 nm. Applied Physics Letters, 51 (10). 707-709 doi:10.1063/1.98895
 
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