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DenBaars, S. P., Beyler, C. A., Hariz, A., Dapkus, P. D. (1987) GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy. Applied Physics Letters, 51 (19). 1530-1532 doi:10.1063/1.98625

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Reference TypeJournal (article/letter/editorial)
TitleGaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy
JournalApplied Physics Letters
AuthorsDenBaars, S. P.Author
Beyler, C. A.Author
Hariz, A.Author
Dapkus, P. D.Author
Year1987 (November 9)Volume51
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.98625Search in ResearchGate
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Mindat Ref. ID8481346Long-form Identifiermindat:1:5:8481346:2
GUID0
Full ReferenceDenBaars, S. P., Beyler, C. A., Hariz, A., Dapkus, P. D. (1987) GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy. Applied Physics Letters, 51 (19). 1530-1532 doi:10.1063/1.98625
Plain TextDenBaars, S. P., Beyler, C. A., Hariz, A., Dapkus, P. D. (1987) GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy. Applied Physics Letters, 51 (19). 1530-1532 doi:10.1063/1.98625
In(1987, November) Applied Physics Letters Vol. 51 (19) AIP Publishing

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Chen, Q., Osinski, J. S., Dapkus, P. D. (1990) Quantum well lasers with active region grown by laser‐assisted atomic layer epitaxy. Applied Physics Letters, 57 (14). 1437-1439 doi:10.1063/1.103363
Hummel, S. G., Beyler, C. A., Zou, Y., Grodzinski, P., Dapkus, P. D. (1990) Use of tertiarybutylarsine in the fabrication of GaAs/AlGaAs quantum wells and quantum well lasers. Applied Physics Letters, 57 (7). 695-697 doi:10.1063/1.103595
Lee, H. C., Hariz, A., Dapkus, P. D., Kost, A., Kawase, M., Garmire, E. (1987) Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. Applied Physics Letters, 50 (17). 1182-1184 doi:10.1063/1.97904
Hariz, A., Dapkus, P. Daniel, Lee, H. C., Menu, E. P., DenBaars, S. P. (1989) Minority‐carrier lifetimes in undoped AlGaAs/GaAs multiple quantum wells. Applied Physics Letters, 54 (7). 635-637 doi:10.1063/1.100902
Frateschi, N. C., Jow, M. Y., Dapkus, P. D., Levi, A. F. J. (1994) InGaAs/GaAs quantum well lasers with dry‐etched mirror passivated by vacuum atomic layer epitaxy. Applied Physics Letters, 65 (14). 1748-1750 doi:10.1063/1.112905
Chen, Q., Beyler, C. A., Dapkus, P. D., Alwan, J. J., Coleman, J. J. (1992) Use of tertiarybutylarsine in atomic layer epitaxy and laser‐assisted atomic layer epitaxy of device quality GaAs. Applied Physics Letters, 60 (19). 2418-2420 doi:10.1063/1.106991
Lee, H. C., Dzurko, K. M., Dapkus, P. D., Garmire, E. (1987) Electroabsorption in AlGaAs/GaAs multiple quantum well structures grown on a GaP transparent substrate. Applied Physics Letters, 51 (20). 1582-1584 doi:10.1063/1.98561
Chong, Tow C., Fonstad, Clifton G. (1987) Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 51 (4). 221-223 doi:10.1063/1.98481
Dzurko, K. M., Menu, E. P., Beyler, C. A., Osinski, J. S., Dapkus, P. D. (1989) Temperature engineered growth of low‐threshold quantum well lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (2). 105-107 doi:10.1063/1.101242
Offsey, S. D., Schaff, W. J., Tasker, P. J., Ennen, H., Eastman, L. F. (1989) Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 54 (25). 2527-2529 doi:10.1063/1.101083
Denbaars, S.P., Dapkus, P.D., Beyler, C.A., Hariz, A., Dzurko, K.M. (1988) Atomic layer epitaxy for the growth of heterostructure devices. Journal of Crystal Growth, 93 (1). 195-200 doi:10.1016/0022-0248(88)90527-1
 
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