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Dzurko, K. M., Menu, E. P., Beyler, C. A., Osinski, J. S., Dapkus, P. D. (1989) Temperature engineered growth of low‐threshold quantum well lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (2). 105-107 doi:10.1063/1.101242

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Reference TypeJournal (article/letter/editorial)
TitleTemperature engineered growth of low‐threshold quantum well lasers by metalorganic chemical vapor deposition
JournalApplied Physics Letters
AuthorsDzurko, K. M.Author
Menu, E. P.Author
Beyler, C. A.Author
Osinski, J. S.Author
Dapkus, P. D.Author
Year1989 (January 9)Volume54
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.101242Search in ResearchGate
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Mindat Ref. ID8486639Long-form Identifiermindat:1:5:8486639:4
GUID0
Full ReferenceDzurko, K. M., Menu, E. P., Beyler, C. A., Osinski, J. S., Dapkus, P. D. (1989) Temperature engineered growth of low‐threshold quantum well lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (2). 105-107 doi:10.1063/1.101242
Plain TextDzurko, K. M., Menu, E. P., Beyler, C. A., Osinski, J. S., Dapkus, P. D. (1989) Temperature engineered growth of low‐threshold quantum well lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (2). 105-107 doi:10.1063/1.101242
In(1989, January) Applied Physics Letters Vol. 54 (2) AIP Publishing

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Osinski, J. S., Dzurko, K. M., Hummel, S. G., Dapkus, P. D. (1990) Optimization of stripe width for low‐threshold operation of quantum well laser diodes. Applied Physics Letters, 56 (25). 2487-2489 doi:10.1063/1.102887
Kasemset, D., Hong, C. S., Patel, N. B., Dapkus, P. D. (1982) Very narrow graded‐barrier single quantum well lasers grown by metalorganic chemical vapor deposition. Applied Physics Letters, 41 (10). 912-914 doi:10.1063/1.93352
Dupuis, R. D., Dapkus, P. D., Holonyak, N., Kolbas, R. M. (1979) Continuous room‐temperature multiple‐quantum‐well AlxGa1−xAs‐GaAs injection lasers grown by metalorganic chemical vapor deposition. Applied Physics Letters, 35 (7). 487-489 doi:10.1063/1.91206
Dupuis, R. D., Dapkus, P. D. (1978) Very low threshold Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition. Applied Physics Letters, 32 (8). 473-475 doi:10.1063/1.90090
Hong, C. S., Coleman, J. J., Dapkus, P. D., Liu, Y. Z. (1982) High‐efficiency, low‐threshold, Zn‐diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition. Applied Physics Letters, 40 (3). 208-210 doi:10.1063/1.93042
Ng, Willie, Hong, C. S., Manasevit, H., Dapkus, P. D. (1981) Low‐threshold 1.3‐μm GaInAsP/InP buried heterostructure lasers by liquid phase epitaxy and metalorganic chemical vapor deposition. Applied Physics Letters, 39 (3). 188-189 doi:10.1063/1.92697
Beernink, K. J., York, P. K., Coleman, J. J. (1989) Dependence of threshold current density on quantum well composition for strained‐layer InGaAs‐GaAs lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 55 (25). 2585-2587 doi:10.1063/1.101986
York, P. K., Beernink, K. J., Fernández, G. E., Coleman, J. J. (1989) InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (6). 499-501 doi:10.1063/1.100935
Vojak, B. A., Kirchoefer, S. W., Holonyak, N., Chin, R., Dupuis, R. D., Dapkus, P. D. (1979) Low‐temperature operation of multiple quantum‐well AlxGa1−xAs‐GaAsp‐nheterostructure lasers grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 50 (9). 5830-5834 doi:10.1063/1.326729
Dupuis, R. D., Dapkus, P. D., Garner, C. M., Su, C. Y., Spicer, W. E. (1979) Abrupt Ga1−xAlxAs‐GaAs quantum‐well heterostructures grown by metalorganic chemical vapor deposition. Applied Physics Letters, 34 (5). 335-337 doi:10.1063/1.90778
DenBaars, S. P., Beyler, C. A., Hariz, A., Dapkus, P. D. (1987) GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy. Applied Physics Letters, 51 (19). 1530-1532 doi:10.1063/1.98625
 
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