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Lee, Henry P., Liu, Xiaoming, Wang, Shyh (1990) Double‐heterostructure GaAs/AlGaAs lasers on Si substrates with reduced threshold current and built‐in index guiding by selective‐area molecular beam epitaxy. Applied Physics Letters, 56 (11). 1014-1016 doi:10.1063/1.102602

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Reference TypeJournal (article/letter/editorial)
TitleDouble‐heterostructure GaAs/AlGaAs lasers on Si substrates with reduced threshold current and built‐in index guiding by selective‐area molecular beam epitaxy
JournalApplied Physics Letters
AuthorsLee, Henry P.Author
Liu, XiaomingAuthor
Wang, ShyhAuthor
Year1990 (March 12)Volume56
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.102602Search in ResearchGate
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Mindat Ref. ID8489685Long-form Identifiermindat:1:5:8489685:4
GUID0
Full ReferenceLee, Henry P., Liu, Xiaoming, Wang, Shyh (1990) Double‐heterostructure GaAs/AlGaAs lasers on Si substrates with reduced threshold current and built‐in index guiding by selective‐area molecular beam epitaxy. Applied Physics Letters, 56 (11). 1014-1016 doi:10.1063/1.102602
Plain TextLee, Henry P., Liu, Xiaoming, Wang, Shyh (1990) Double‐heterostructure GaAs/AlGaAs lasers on Si substrates with reduced threshold current and built‐in index guiding by selective‐area molecular beam epitaxy. Applied Physics Letters, 56 (11). 1014-1016 doi:10.1063/1.102602
In(1990, March) Applied Physics Letters Vol. 56 (11) AIP Publishing

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Liu, Xiaoming, Lee, Henry P., Wang, Shyh (1990) Polarization characteristics of AlGaAs/GaAs double‐heterostructure lasers grown on Si substrates. Applied Physics Letters, 57 (19). 1955-1957 doi:10.1063/1.104018
Burns, Geoffrey F., Blanck, Hervé, Fonstad, Clifton G. (1990) Low‐threshold GaAs/AlGaAs graded‐index separate confinement heterostructure lasers grown by molecular beam epitaxy on oxide‐masked Si substrates. Applied Physics Letters, 56 (25). 2499-2501 doi:10.1063/1.102870
Lee, Henry P., Wang, Shyh, Huang, Yi‐He, Yu, Peter (1988) Photoluminescence studies of selective‐area molecular beam epitaxy of GaAs film on Si substrate. Applied Physics Letters, 52 (3). 215-217 doi:10.1063/1.99523
Lee, Henry P., Liu, Xiaoming, Wang, Shyh, George, Thomas, Weber, Eicke R. (1989) Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy. Applied Physics Letters, 54 (26). 2695-2697 doi:10.1063/1.101018
Chong, Tow C., Fonstad, Clifton G. (1987) Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 51 (4). 221-223 doi:10.1063/1.98481
Tsang, W. T. (1979) Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 34 (7). 473-475 doi:10.1063/1.90839
Tsang, W. T., Reinhart, F. K., Ditzenberger, J. A. (1980) Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 36 (1). 11-14 doi:10.1063/1.91297
Lee, T. P., Holden, W. S., Cho, A. Y. (1978) AlGaAs‐GaAs double‐heterostructure small‐area light‐emitting diodes by molecular‐beam epitaxy. Applied Physics Letters, 32 (7). 415-417 doi:10.1063/1.90068
Tsang, W. T. (1986) Very low current threshold GaAs/Al0.5Ga0.5As double‐heterostructure lasers grown by chemical beam epitaxy. Applied Physics Letters, 48 (8). 511-513 doi:10.1063/1.96490
Wu, Yao‐Hwa, Werner, Michael, Wang, Shyh (1984) Channeled‐substrate GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 45 (6). 606-608 doi:10.1063/1.95326
Tsang, W. T., Reinhart, F. K., Ditzenberger, J. A. (1980) The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 36 (2). 118-120 doi:10.1063/1.91400
 
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