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Chen, H. Z., Ghaffari, A., Morkoç, H., Yariv, A. (1987) Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities. Applied Physics Letters, 51 (25). 2094-2096 doi:10.1063/1.98958

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Reference TypeJournal (article/letter/editorial)
TitleEffect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities
JournalApplied Physics Letters
AuthorsChen, H. Z.Author
Ghaffari, A.Author
Morkoç, H.Author
Yariv, A.Author
Year1987 (December 21)Volume51
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.98958Search in ResearchGate
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Mindat Ref. ID8481821Long-form Identifiermindat:1:5:8481821:8
GUID0
Full ReferenceChen, H. Z., Ghaffari, A., Morkoç, H., Yariv, A. (1987) Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities. Applied Physics Letters, 51 (25). 2094-2096 doi:10.1063/1.98958
Plain TextChen, H. Z., Ghaffari, A., Morkoç, H., Yariv, A. (1987) Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities. Applied Physics Letters, 51 (25). 2094-2096 doi:10.1063/1.98958
In(1987, December) Applied Physics Letters Vol. 51 (25) AIP Publishing

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Chen, H. Z., Ghaffari, A., Wang, H., Morkoç, H., Yariv, A. (1987) Low‐threshold (∼600 A/cm2at room temperature) GaAs/AlGaAs lasers on Si (100). Applied Physics Letters, 51 (17). 1320-1321 doi:10.1063/1.98716
Chen, H. Z., Paslaski, J., Yariv, A., Morkoç, H. (1988) High‐frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy. Applied Physics Letters, 52 (8). 605-606 doi:10.1063/1.99378
Eng, L. E., Chen, T. R., Sanders, S., Zhuang, Y. H., Zhao, B., Yariv, A., Morkoç, H. (1989) Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (14). 1378-1379 doi:10.1063/1.101599
Chen, H. Z., Wang, H., Ghaffari, A., Morkoç, H., Yariv, A. (1987) Measurement of Au/GaAs/AlxGa1−xAs hetero‐Schottky barrier height and GaAs/AlxGa1−xAs conduction‐band discontinuity. Applied Physics Letters, 51 (13). 990-991 doi:10.1063/1.98785
Chong, Tow C., Fonstad, Clifton G. (1987) Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 51 (4). 221-223 doi:10.1063/1.98481
Paslaski, J., Chen, H. Z., Morkoç, H., Yariv, A. (1988) High‐speed GaAsp‐i‐nphotodiodes grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 52 (17). 1410-1412 doi:10.1063/1.99131
Mohammad, S. Noor, Chen, J., Chyi, J.‐I., Morkoç, H. (1991) Effect of junction and band‐gap grading on the electrical performance of molecular beam epitaxial grown AlGaAs/GaAs/AlGaAs double‐heterojunction bipolar transistors. Journal of Applied Physics, 69 (2). 1067-1070 doi:10.1063/1.347373
Tsang, W. T., Reinhart, F. K., Ditzenberger, J. A. (1980) Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 36 (1). 11-14 doi:10.1063/1.91297
Tsang, W. T. (1986) Very low current threshold GaAs/Al0.5Ga0.5As double‐heterostructure lasers grown by chemical beam epitaxy. Applied Physics Letters, 48 (8). 511-513 doi:10.1063/1.96490
Tsang, W. T., Reinhart, F. K., Ditzenberger, J. A. (1980) The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy. Applied Physics Letters, 36 (2). 118-120 doi:10.1063/1.91400
Agarwala, S., Won, T., Morkoç, H. (1989) AlGaAs/GaAs single heterojunction bipolar transistors grown on InP by molecular beam epitaxy. Applied Physics Letters, 54 (12). 1151-1153 doi:10.1063/1.100745
 
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