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Suzuki, Yoshifumi, Seki, Masahiro, Horikoshi, Yoshiji, Okamoto, Hiroshi (1984) Surface Defects on MBE-Grown GaAs. Japanese Journal of Applied Physics, 23. 164-167 doi:10.1143/jjap.23.164

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Reference TypeJournal (article/letter/editorial)
TitleSurface Defects on MBE-Grown GaAs
JournalJapanese Journal of Applied Physics
AuthorsSuzuki, YoshifumiAuthor
Seki, MasahiroAuthor
Horikoshi, YoshijiAuthor
Okamoto, HiroshiAuthor
Year1984 (February 20)Volume23
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.23.164Search in ResearchGate
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Mindat Ref. ID14987239Long-form Identifiermindat:1:5:14987239:5
GUID0
Full ReferenceSuzuki, Yoshifumi, Seki, Masahiro, Horikoshi, Yoshiji, Okamoto, Hiroshi (1984) Surface Defects on MBE-Grown GaAs. Japanese Journal of Applied Physics, 23. 164-167 doi:10.1143/jjap.23.164
Plain TextSuzuki, Yoshifumi, Seki, Masahiro, Horikoshi, Yoshiji, Okamoto, Hiroshi (1984) Surface Defects on MBE-Grown GaAs. Japanese Journal of Applied Physics, 23. 164-167 doi:10.1143/jjap.23.164
In(1984) Japanese Journal of Applied Physics Vol. 23. Japan Society of Applied Physics

See Also

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Okamoto, Hiroshi, Seki, Masahiro, Horikoshi, Yoshiji (1983) Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l367
Hirayama, Yoshiro, Horikoshi, Yoshiji, Okamoto, Hiroshi (1984) Interdiffusion of Al and Ga in Si-Implanted GaAs–AlAs Superlattices. Japanese Journal of Applied Physics, 23. 1568-1572 doi:10.1143/jjap.23.1568
Tarucha, Seigo, Kobayashi, Hideki, Horikoshi, Yoshiji, Okamoto, Hiroshi (1984) Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures. Japanese Journal of Applied Physics, 23. 874-878 doi:10.1143/jjap.23.874
Ohmori, Yutaka, Tarucha, Seigo, Horikoshi, Yoshiji, Okamoto, Hiroshi (1984) Room Temperature Operation of Al0.17Ga0.83Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l94
Ishibashi, Tadao, Suzuki, Yoshifumi, Okamoto, Hiroshi (1981) Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7–0.8 µm Wavelength Region. Japanese Journal of Applied Physics, 20 (9) doi:10.1143/jjap.20.l623
Suzuki, Yoshifumi, Hirayama, Yoshiro, Okamoto, Hiroshi (1986) Defects in Ga+Jon Implanted GaAs-AlAs MQW Structures. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l912
Suzuki, Keita, Ito, Masahiro, Horikoshi, Yoshiji (1999) Selective Growth of GaAs on GaAs (111)B Substrates by Migration-Enhanced Epitaxy. Japanese Journal of Applied Physics, 38. 6197-6201 doi:10.1143/jjap.38.6197
Ohmori, Yutaka, Suzuki, Yoshifumi, Okamoto, Hiroshi (1985) Room Temperature CW Operation of GaSb/AlGaSb MQW Laser Diodes Grown by MBE. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l657
Tarucha, Seigo, Horikoshi, Yoshiji, Okamoto, Hiroshi (1983) Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l482
Suzuki, Daiichi, Yamaguchi, Hiroshi, Horikoshi, Yoshiji (1998) Scanning Tunneling Microscopy Study of GaAs (001) Surfaces Grown by Migration-Enhanced Epitaxy at Low Temperatures. Japanese Journal of Applied Physics, 37. 758-761 doi:10.1143/jjap.37.758
Goldstein, Leon, Horikoshi, Yoshiji, Tarucha, Seigo, Okamoto, Hiroshi (1983) Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices. Japanese Journal of Applied Physics, 22. 1489-1492 doi:10.1143/jjap.22.1489
 
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