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Tarucha, Seigo, Kobayashi, Hideki, Horikoshi, Yoshiji, Okamoto, Hiroshi (1984) Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures. Japanese Journal of Applied Physics, 23. 874-878 doi:10.1143/jjap.23.874

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Reference TypeJournal (article/letter/editorial)
TitleCarrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
JournalJapanese Journal of Applied Physics
AuthorsTarucha, SeigoAuthor
Kobayashi, HidekiAuthor
Horikoshi, YoshijiAuthor
Okamoto, HiroshiAuthor
Year1984 (July 20)Volume23
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.23.874Search in ResearchGate
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Mindat Ref. ID14987411Long-form Identifiermindat:1:5:14987411:5
GUID0
Full ReferenceTarucha, Seigo, Kobayashi, Hideki, Horikoshi, Yoshiji, Okamoto, Hiroshi (1984) Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures. Japanese Journal of Applied Physics, 23. 874-878 doi:10.1143/jjap.23.874
Plain TextTarucha, Seigo, Kobayashi, Hideki, Horikoshi, Yoshiji, Okamoto, Hiroshi (1984) Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures. Japanese Journal of Applied Physics, 23. 874-878 doi:10.1143/jjap.23.874
In(1984) Japanese Journal of Applied Physics Vol. 23. Japan Society of Applied Physics

See Also

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Tarucha, Seigo, Horikoshi, Yoshiji, Okamoto, Hiroshi (1983) Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l482
Saku, Tadashi, Horikoshi, Yoshiji, Tarucha, Seigo (1994) High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures. Japanese Journal of Applied Physics, 33. 4837-4842 doi:10.1143/jjap.33.4837
Ohmori, Yutaka, Tarucha, Seigo, Horikoshi, Yoshiji, Okamoto, Hiroshi (1984) Room Temperature Operation of Al0.17Ga0.83Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l94
Goldstein, Leon, Horikoshi, Yoshiji, Tarucha, Seigo, Okamoto, Hiroshi (1983) Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices. Japanese Journal of Applied Physics, 22. 1489-1492 doi:10.1143/jjap.22.1489
Iwamura, Hidetoshi, Tarucha, Seigo, Saku, Tadashi, Horikoshi, Yoshiji, Okamoto, Hiroshi (1983) A Segmented Electrode Multi-Quantum-Well Laser Diode. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l751
Suzuki, Yoshifumi, Seki, Masahiro, Horikoshi, Yoshiji, Okamoto, Hiroshi (1984) Surface Defects on MBE-Grown GaAs. Japanese Journal of Applied Physics, 23. 164-167 doi:10.1143/jjap.23.164
Okamoto, Hiroshi, Seki, Masahiro, Horikoshi, Yoshiji (1983) Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l367
Hirayama, Yoshiro, Horikoshi, Yoshiji, Okamoto, Hiroshi (1984) Interdiffusion of Al and Ga in Si-Implanted GaAs–AlAs Superlattices. Japanese Journal of Applied Physics, 23. 1568-1572 doi:10.1143/jjap.23.1568
Makimoto, Toshiki, Kobayashi, Naoki, Horikoshi, Yoshiji (1986) Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l513
Iwamura, Hidetoshi, Kobayashi, Hideki, Okamoto, Hiroshi (1984) Excitonic Absorption Spectra of GaAs-AlAs Superlattice at High Temperature. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l795
Saku, Tadashi, Horikoshi, Yoshiji, Tokura, Yasuhiro (1996) Limit of Electron Mobility in AlGaAs/GaAs Modulation-doped Heterostructures. Japanese Journal of Applied Physics, 35. 34-38 doi:10.1143/jjap.35.34
 
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