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Mori, Toshihiko, Hamaguchi, Chihiro, Shibatomi, Akihiro, Ryuzan, Osamu (1984) Hot Electron Effect in Short n+nn+GaAs. Japanese Journal of Applied Physics, 23. 212-215 doi:10.1143/jjap.23.212

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Reference TypeJournal (article/letter/editorial)
TitleHot Electron Effect in Short n+nn+GaAs
JournalJapanese Journal of Applied Physics
AuthorsMori, ToshihikoAuthor
Hamaguchi, ChihiroAuthor
Shibatomi, AkihiroAuthor
Ryuzan, OsamuAuthor
Year1984 (February 20)Volume23
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.23.212Search in ResearchGate
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Mindat Ref. ID14987259Long-form Identifiermindat:1:5:14987259:3
GUID0
Full ReferenceMori, Toshihiko, Hamaguchi, Chihiro, Shibatomi, Akihiro, Ryuzan, Osamu (1984) Hot Electron Effect in Short n+nn+GaAs. Japanese Journal of Applied Physics, 23. 212-215 doi:10.1143/jjap.23.212
Plain TextMori, Toshihiko, Hamaguchi, Chihiro, Shibatomi, Akihiro, Ryuzan, Osamu (1984) Hot Electron Effect in Short n+nn+GaAs. Japanese Journal of Applied Physics, 23. 212-215 doi:10.1143/jjap.23.212
In(1984) Japanese Journal of Applied Physics Vol. 23. Japan Society of Applied Physics

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Lasserre, Jean, Tanimoto, Hiroyoshi, Taniguchi, Kenji, Hamaguchi, Chihiro (1988) Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions. Japanese Journal of Applied Physics, 27. 924-928 doi:10.1143/jjap.27.924
Kitahara, Kuninori, Ozeki, Masashi, Shibatomi, Akihiro (1984) Optical Observation of Inhomogeneity of Chromium-Doped Semi-Insulating GaAs. Japanese Journal of Applied Physics, 23. 207-211 doi:10.1143/jjap.23.207
Ozeki, Masashi, Kitahara, Kuninori, Nakai, Kenya, Shibatomi, Akihiro, Dazai, Koichi, Okawa, Shinji, Ryuzan, Osamu (1977) Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor Phase. Japanese Journal of Applied Physics, 16 (9) 1617-1622 doi:10.1143/jjap.16.1617
Moriyasu, Katsuji, Osako, Shinichi, Mori, Nobuya, Hamaguchi, Chihiro (1997) Effect of Quantum Confinement and Lattice Relaxation on Electronic States in GaAs/In0.2Ga0.8As/GaAs Quantum Dots. Japanese Journal of Applied Physics, 36. 3932-3935 doi:10.1143/jjap.36.3932
Hamaguchi, C., Terashima, K., Shibatomi, A., Ryuzan, O. (1983) Effect of boundary conditions on hot electron transport in short semiconductors. Physica B+C, 117. 238-240 doi:10.1016/0378-4363(83)90493-x
Imamura, Kenichi, Yokoyama, Naoki, Ohnishi, Toyokazu, Suzuki, Shoichi, Nakai, Kenya, Nishi, Hidetoshi, Shibatomi, Akihiro (1984) A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n+-Layer using MOCVD. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l342
Kitahara, Kuninori, Nakai, Kenya, Shibatomi, Akihiro, Ohkawa, Shinji (1980) Substrate Bias Effect on Ion-Implanted GaAs MESFETs. Japanese Journal of Applied Physics, 19 (7) doi:10.1143/jjap.19.l369
Tanimoto, Hiroyoshi, Yasuda, Naoki, Taniguchi, Kenji, Hamaguchi, Chihiro (1988) Monte Carlo Study of Hot Electron Transport in Quantum Wells. Japanese Journal of Applied Physics, 27. 1363 doi:10.1143/jjap.27.1363
Yahata, Akihiro, Nakajima, Masato (1984) Effect of Metals Used for Schottky Barrier Contacts on DLTS Signals for LEC n-GaAs Crystals. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l313
Ozeki, Masashi, Dazai, Koichi, Ryuzan, Osamu (1972) Photoluminescence of GaAs Grown by Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 11 (7) 1049 doi:10.1143/jjap.11.1049
Tanimoto, Hiroyoshi, Yasuda, Naoki, Taniguchi, Kenji, Hamaguchi, Chihiro (1988) Monte Carlo Study of Hot Electron Transport in Quantum Wells. Japanese Journal of Applied Physics, 27. 563-571 doi:10.1143/jjap.27.563
 
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