Vote for your favorite mineral in #MinCup25! - Sanidine vs. Hematite
It's a pair of often-overlooked classics as potassium feldspar sanidine competes with iron ore hematite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Lasserre, Jean, Tanimoto, Hiroyoshi, Taniguchi, Kenji, Hamaguchi, Chihiro (1988) Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions. Japanese Journal of Applied Physics, 27. 924-928 doi:10.1143/jjap.27.924

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleHot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions
JournalJapanese Journal of Applied Physics
AuthorsLasserre, JeanAuthor
Tanimoto, HiroyoshiAuthor
Taniguchi, KenjiAuthor
Hamaguchi, ChihiroAuthor
Year1988 (June 20)Volume27
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.27.924Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14992095Long-form Identifiermindat:1:5:14992095:9
GUID0
Full ReferenceLasserre, Jean, Tanimoto, Hiroyoshi, Taniguchi, Kenji, Hamaguchi, Chihiro (1988) Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions. Japanese Journal of Applied Physics, 27. 924-928 doi:10.1143/jjap.27.924
Plain TextLasserre, Jean, Tanimoto, Hiroyoshi, Taniguchi, Kenji, Hamaguchi, Chihiro (1988) Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions. Japanese Journal of Applied Physics, 27. 924-928 doi:10.1143/jjap.27.924
In(1988) Japanese Journal of Applied Physics Vol. 27. Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Tanimoto, Hiroyoshi, Yasuda, Naoki, Taniguchi, Kenji, Hamaguchi, Chihiro (1988) Monte Carlo Study of Hot Electron Transport in Quantum Wells. Japanese Journal of Applied Physics, 27. 1363 doi:10.1143/jjap.27.1363
Tanimoto, Hiroyoshi, Yasuda, Naoki, Taniguchi, Kenji, Hamaguchi, Chihiro (1988) Monte Carlo Study of Hot Electron Transport in Quantum Wells. Japanese Journal of Applied Physics, 27. 563-571 doi:10.1143/jjap.27.563
Yasuda, Naoki, Nakamura, Hiroshi, Taniguchi, Kenji, Hamaguchi, Chihiro, Kakumu, Masakazu (1988) Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l2395
Masaki, Kazuo, Hamaguchi, Chihiro, Taniguchi, Kenji, Iwase, Masao (1989) Electron Mobility in Si Inversion Layers. Japanese Journal of Applied Physics, 28. 1856-1863 doi:10.1143/jjap.28.1856
Sekido, Mamoru, Taniguchi, Kenji, Hamaguchi, Chihiro (1991) Direct Observation of Gaussian-Type Energy Distribution for Hot Electrons in Silicon. Japanese Journal of Applied Physics, 30. 1149-1153 doi:10.1143/jjap.30.1149
Masaki, Kazuo, Taniguchi, Kenji, Hamaguchi, Chihiro, Iwase, Masao (1991) Temperature Dependence of Electron Mobility in Si Inversion Layers. Japanese Journal of Applied Physics, 30. 2734-2739 doi:10.1143/jjap.30.2734
Mori, Toshihiko, Hamaguchi, Chihiro, Shibatomi, Akihiro, Ryuzan, Osamu (1984) Hot Electron Effect in Short n+nn+GaAs. Japanese Journal of Applied Physics, 23. 212-215 doi:10.1143/jjap.23.212
Matsuoka, Toshimasa, Kobayashi, Eisuke, Taniguchi, Kenji, Hamaguchi, Chihiro, Sasa, Shigehiko (1990) Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures. Japanese Journal of Applied Physics, 29. 2017-2025 doi:10.1143/jjap.29.2017
Shirahata, Masayoshi, Taniguchi, Kenji, Hamaguchi, Chihiro (1987) A Self-Consistent Monte Carlo Simulation for Two-Dimensional Electron Transport in MOS Inversion Layer. Japanese Journal of Applied Physics, 26. 2142 doi:10.1143/jjap.26.2142
Shirahata, Masayoshi, Taniguchi, Kenji, Hamaguchi, Chihiro (1987) A Self-Consistent Monte Carlo Simulation for Two-Dimensional Electron Transport in MOS Inversion Layer. Japanese Journal of Applied Physics, 26. 1447-1452 doi:10.1143/jjap.26.1447
Sonoda, Ken'ichiro, Inoue, Yoshitsugu, Taniguchi, Kenji, Hamaguchi, Chihiro (1989) Physical Models for Deep Submicron Device Simulation. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l2313
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 7, 2025 07:30:51
Go to top of page