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Tatsuta, Shigeru, Inata, Tsuguo, Okamura, Shigeru, Hiyamizu, Satoshi (1984) The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l147

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Reference TypeJournal (article/letter/editorial)
TitleThe Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE
JournalJapanese Journal of Applied Physics
AuthorsTatsuta, ShigeruAuthor
Inata, TsuguoAuthor
Okamura, ShigeruAuthor
Hiyamizu, SatoshiAuthor
Year1984 (March 20)Volume23
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.23.l147Search in ResearchGate
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Mindat Ref. ID14987462Long-form Identifiermindat:1:5:14987462:7
GUID0
Full ReferenceTatsuta, Shigeru, Inata, Tsuguo, Okamura, Shigeru, Hiyamizu, Satoshi (1984) The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l147
Plain TextTatsuta, Shigeru, Inata, Tsuguo, Okamura, Shigeru, Hiyamizu, Satoshi (1984) The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l147
In(1984) Japanese Journal of Applied Physics Vol. 23. Japan Society of Applied Physics

See Also

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Ando, Hideyasu, Kondo, Kazuhiro, Ishikawa, Hideaki, Sasa, Shigehiko, Inata, Tsuguo, Hiyamizu, Satoshi (1988) Selectively Doped GaAs/N-Al0.3Ga0.7As Heterostructures Grown by Gas-Source MBE. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l896
Sasa, Shigehiko, Saito, Junji, Nanbu, Kazuo, Ishikawa, Tomonori, Hiyamizu, Satoshi (1984) Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l573
Ishikawa, Tomonori, Hiyamizu, Satoshi, Mimura, Takashi, Saito, Junji, Hashimoto, Hisao (1981) The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE. Japanese Journal of Applied Physics, 20 (11) doi:10.1143/jjap.20.l814
Muto, Shunichi, Inata, Tsuguo, Ohnishi, Hiroaki, Yokoyama, Naoki, Hiyamizu, Satoshi (1986) Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l577
Hiyamizu, Satoshi, Saito, Junji, Nanbu, Kazuo, Ishikawa, Tomonori (1983) Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l609
Ishikawa, Tomonori, Kondo, Kazuo, Hiyamizu, Satoshi, Shibatomi, Akihiro (1985) Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l408
Sasa, Shigehiko, Saito, Junji, Nanbu, Kazuo, Ishikawa, Tomonori, Hiyamizu, Satoshi, Inoue, Masataka (1985) Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l281
Hiyamizu, Satoshi, Mimura, Takashi, Fujii, Toshio, Nanbu, Kazuo, Hashimoto, Hisao (1981) Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE. Japanese Journal of Applied Physics, 20 (4) doi:10.1143/jjap.20.l245
Kobayashi, Naoki, Fukui, Takashi, Tsubaki, Kotaro (1984) Selectively-Doped GaAs/n-AlGaAs Heterostructures Grown by MOCVD. Japanese Journal of Applied Physics, 23. 1176-1181 doi:10.1143/jjap.23.1176
Hiyamizu, Satoshi, Fujii, Toshio, Mimura, Takashi, Nanbu, Kazuo, Saito, Junji, Hashimoto, Hisao (1981) The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE. Japanese Journal of Applied Physics, 20 (6) doi:10.1143/jjap.20.l455
Inoue, Kaoru, Sakaki, Hiroyuki, Yoshino, Junji (1984) MBE Growth and Properties of AlGaAs/GaAs/AlGaAs Selectively-Doped Double-Heterojunction Structures with Very High Conductivity. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l767
 
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