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Fujiwara, Yasufumi, Kojima, Atsushi, Nishino, Taneo, Hamakawa, Yoshihiro (1984) Deep-Level Luminescence of Cr-Doped GaAsP Alloys. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l4

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Reference TypeJournal (article/letter/editorial)
TitleDeep-Level Luminescence of Cr-Doped GaAsP Alloys
JournalJapanese Journal of Applied Physics
AuthorsFujiwara, YasufumiAuthor
Kojima, AtsushiAuthor
Nishino, TaneoAuthor
Hamakawa, YoshihiroAuthor
Year1984 (January 20)Volume23
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.23.l4Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14987557Long-form Identifiermindat:1:5:14987557:0
GUID0
Full ReferenceFujiwara, Yasufumi, Kojima, Atsushi, Nishino, Taneo, Hamakawa, Yoshihiro (1984) Deep-Level Luminescence of Cr-Doped GaAsP Alloys. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l4
Plain TextFujiwara, Yasufumi, Kojima, Atsushi, Nishino, Taneo, Hamakawa, Yoshihiro (1984) Deep-Level Luminescence of Cr-Doped GaAsP Alloys. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l4
In(1984) Japanese Journal of Applied Physics Vol. 23. Japan Society of Applied Physics

See Also

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Fujiwara, Yasufumi, Kojima, Atsushi, Nishino, Taneo, Hamakawa, Yoshihiro (1983) Deep-Level Luminescence in Ni-Diffused GaAs. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l476
Fujiwara, Yasufumi, Kojima, Atsushi, Nishino, Taneo, Hamakawa, Yoshihiro (1985) In-Depth Profile Measurements of Cr-Related Luminescence Lines in GaAs. Japanese Journal of Applied Physics, 24. 1479-1483 doi:10.1143/jjap.24.1479
Fujiwara, Yasufumi, Nishino, Taneo, Hamakawa, Yoshihiro (1982) Cr-Related Intracenter Luminescence in GaAs: Cr. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l727
Fujiwara, Yasufumi, Kita, Yasushi, Tonami, Yoshiyuki, Nishino, Taneo, Hamakawa, Yoshihiro (1986) Effects of In Doping on Cr-Related Luminescence in GaAs. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l232
Yagi, Tetsuya, Fujiwara, Yasufumi, Nishino, Taneo, Hamakawa, Yoshihiro (1983) Photoluminescence and Lattice Mismatch in InGaAs/InP. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l467
Fujiwara, Yasufumi, Shirakata, Sho, Nishino, Taneo, Hamakawa, Yoshihiro, Fujita, Shigeo (1986) Interface Stress at ZnSe/GaAs:Cr Heterostructure. Japanese Journal of Applied Physics, 25. 1628-1632 doi:10.1143/jjap.25.1628
Nishino, Taneo, Yanagida, Toshio, Hamakawa, Yoshihiro (1972) Impurity Electroabsorption of GaAs. Japanese Journal of Applied Physics, 11 (8) 1221 doi:10.1143/jjap.11.1221
Yamazoe, Yoshimitsu, Sasai, Yoichi, Nishino, Taneo, Hamakawa, Yoshihiro (1981) Deep Impurity Levels in InP LEC Crystals. Japanese Journal of Applied Physics, 20 (2) 347-354 doi:10.1143/jjap.20.347
Hus, Jun-Tsung, Nishino, Taneo, Hamakawa, Yoshihiro (1987) Out-Diffusion of Chromium and 0.839 eV Luminescence Center in GaAs. Japanese Journal of Applied Physics, 26. 685-689 doi:10.1143/jjap.26.685
Nishino, Taneo, Hamakawa, Yoshihiro (1970) Electrical and Optical Properties of Si-SnO2Heterojunctions. Japanese Journal of Applied Physics, 9 (9) 1085-1090 doi:10.1143/jjap.9.1085
Nishino, Taneo, Hamakawa, Yoshihiro (1977) Preparation and Properties of InS Single Crystals. Japanese Journal of Applied Physics, 16 (8) 1291-1300 doi:10.1143/jjap.16.1291
 
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