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Shindo, Masanari, Sato, Shigeru, Myokan, Isao, Mano, Shigeru, Shibata, Takuji (1985) Bombardment Damage in Reactively-Evaporated a-Si:H. Japanese Journal of Applied Physics, 24. 1100-1101 doi:10.1143/jjap.24.1100

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Reference TypeJournal (article/letter/editorial)
TitleBombardment Damage in Reactively-Evaporated a-Si:H
JournalJapanese Journal of Applied Physics
AuthorsShindo, MasanariAuthor
Sato, ShigeruAuthor
Myokan, IsaoAuthor
Mano, ShigeruAuthor
Shibata, TakujiAuthor
Year1985 (August 20)Volume24
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.24.1100Search in ResearchGate
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Mindat Ref. ID14987851Long-form Identifiermindat:1:5:14987851:9
GUID0
Full ReferenceShindo, Masanari, Sato, Shigeru, Myokan, Isao, Mano, Shigeru, Shibata, Takuji (1985) Bombardment Damage in Reactively-Evaporated a-Si:H. Japanese Journal of Applied Physics, 24. 1100-1101 doi:10.1143/jjap.24.1100
Plain TextShindo, Masanari, Sato, Shigeru, Myokan, Isao, Mano, Shigeru, Shibata, Takuji (1985) Bombardment Damage in Reactively-Evaporated a-Si:H. Japanese Journal of Applied Physics, 24. 1100-1101 doi:10.1143/jjap.24.1100
In(1985) Japanese Journal of Applied Physics Vol. 24. Japan Society of Applied Physics

See Also

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Shindo, Masanari, Sato, Shigeru, Myokan, Isao, Mano, Shigeru, Shibata, Takuji (1984) High Rate Preparation of a-Si:H by Reactive Evaporation Method. Japanese Journal of Applied Physics, 23. 273-276 doi:10.1143/jjap.23.273
Shindo, Masanari, Sato, Shigeru, Myokan, Isao, Mano, Shigeru, Shibata, Takuji (1983) Preparation and analysis of reactively evaporated a-Si:H. Journal of Non-Crystalline Solids, 59. 747-750 doi:10.1016/0022-3093(83)90279-x
Shindo, Masanori, Sato, Shigeru, Myokan, Isao, Mano, Shigeru, Shibata, Takuji (1985) Preparation Capacity of Reactive Evaporation Method for Amorphous Silicon. Japanese Journal of Applied Physics, 24. 14-18 doi:10.1143/jjap.24.14
Maeda, Yasushi, Hirono, Shigeru, Asahi, Masayoshi (1985) TEM Observation of Microstructure in Sputtered Co-Cr Film. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l951
Tachikawa, Masami, Fujisawa, Toshimasa, Kukimoto, Hiroshi, Shibata, Akio, Oomi, Gendo, Minomura, Shigeru (1985) Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l893
Nakashima, Hisao, Semura, Shigeru, Ohta, Tsuneaki, Kuroda, Takao (1985) AlGaAs Window Stripe Buried Multiquantum Well Lasers. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l647
Wenke, Gerhard, Saito, Shigeru (1985) Phase Locking of Semiconductor Lasers Using Homodyne Detection and Negative Electrical Feedback. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l908
Shiomi, Shigeru, Masuda, Morio (1985) Effect of Implantation-Induced Anisotropy on Magnetization Distributions in Garnet Films. Japanese Journal of Applied Physics, 24. 1637-1642 doi:10.1143/jjap.24.1637
Shigetomi, Shigeru, Matsumori, Tokue (1985) Temperature Dependence of Electrical Properties in Si-Implanted Semi-Insulating GaAs. Japanese Journal of Applied Physics, 24. 243-244 doi:10.1143/jjap.24.243
Mizuta, Masashi, Tachikawa, Masami, Kukimoto, Hiroshi, Minomura, Shigeru (1985) Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l143
Awano, Haruo, Sato, Takanori (1988) Effect of Argon Ion Bombardment on Internal Stress in Evaporated Co-Cr Film. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l880
 
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