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Shindo, Masanari, Sato, Shigeru, Myokan, Isao, Mano, Shigeru, Shibata, Takuji (1984) High Rate Preparation of a-Si:H by Reactive Evaporation Method. Japanese Journal of Applied Physics, 23. 273-276 doi:10.1143/jjap.23.273

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Reference TypeJournal (article/letter/editorial)
TitleHigh Rate Preparation of a-Si:H by Reactive Evaporation Method
JournalJapanese Journal of Applied Physics
AuthorsShindo, MasanariAuthor
Sato, ShigeruAuthor
Myokan, IsaoAuthor
Mano, ShigeruAuthor
Shibata, TakujiAuthor
Year1984 (March 20)Volume23
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.23.273Search in ResearchGate
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Mindat Ref. ID14987274Long-form Identifiermindat:1:5:14987274:6
GUID0
Full ReferenceShindo, Masanari, Sato, Shigeru, Myokan, Isao, Mano, Shigeru, Shibata, Takuji (1984) High Rate Preparation of a-Si:H by Reactive Evaporation Method. Japanese Journal of Applied Physics, 23. 273-276 doi:10.1143/jjap.23.273
Plain TextShindo, Masanari, Sato, Shigeru, Myokan, Isao, Mano, Shigeru, Shibata, Takuji (1984) High Rate Preparation of a-Si:H by Reactive Evaporation Method. Japanese Journal of Applied Physics, 23. 273-276 doi:10.1143/jjap.23.273
In(1984) Japanese Journal of Applied Physics Vol. 23. Japan Society of Applied Physics

See Also

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Shindo, Masanari, Sato, Shigeru, Myokan, Isao, Mano, Shigeru, Shibata, Takuji (1985) Bombardment Damage in Reactively-Evaporated a-Si:H. Japanese Journal of Applied Physics, 24. 1100-1101 doi:10.1143/jjap.24.1100
Shindo, Masanori, Sato, Shigeru, Myokan, Isao, Mano, Shigeru, Shibata, Takuji (1985) Preparation Capacity of Reactive Evaporation Method for Amorphous Silicon. Japanese Journal of Applied Physics, 24. 14-18 doi:10.1143/jjap.24.14
Shindo, Masanari, Sato, Shigeru, Myokan, Isao, Mano, Shigeru, Shibata, Takuji (1983) Preparation and analysis of reactively evaporated a-Si:H. Journal of Non-Crystalline Solids, 59. 747-750 doi:10.1016/0022-3093(83)90279-x
Fukuta, Katsuyoshi, Yasuami, Shigeru (1984) Visualization of Defects in GaAs by Oxidation in Water. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l377
Sato, Yuichi, Sato, Susumu (1989) Growth of InN on GaAs Substrates by the Reactive Evaporation Method. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1641
Maeda, Yasushi, Hirono, Shigeru, Yoshii, Shizuka (1981) Preparation of Perpendicular Magnetic Co-Cr Films by Vacuum Evaporation. Japanese Journal of Applied Physics, 20 (7) doi:10.1143/jjap.20.l467
Tatsuta, Shigeru, Inata, Tsuguo, Okamura, Shigeru, Hiyamizu, Satoshi (1984) The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l147
Sato, Yuichi, Hishinuma, Toshifumi, Sato, Susumu (2001) Crystallinity of GaN Thin Films Directly Grown on Metal Foils by the Reactive Evaporation Method. Japanese Journal of Applied Physics, 40. 4516-4517 doi:10.1143/jjap.40.4516
Hirono, Shigeru, Maeda, Yasushi, Hatakeyama, Iwao (1981) Preparation of Perpendicular Magnetic Co-Ru Films by an RF Sputtering Method. Japanese Journal of Applied Physics, 20 (8) doi:10.1143/jjap.20.l571
Matsuura, Takashi, Mizusaki, Junichiro, Yamauchi, Shigeru, Fueki, Kazuo (1984) Martensitic Transformation in La1-xSrxCoO3. Japanese Journal of Applied Physics, 23. 1197-1201 doi:10.1143/jjap.23.1197
Yasuami, Shigeru, Saito, Yasuyuki, Hojo, Akimichi (1984) Au–Ge Ohmic Contact to n-GaAs by IR Lamp Alloying. Japanese Journal of Applied Physics, 23. 379-380 doi:10.1143/jjap.23.379
 
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