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Ishikawa, Katsuya, Yoshida, Masakatsu, Inoue, Morio (1987) Secondary Defects of As+Implanted Silicon Measured by Thermal Wave Technique. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1089

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Reference TypeJournal (article/letter/editorial)
TitleSecondary Defects of As+Implanted Silicon Measured by Thermal Wave Technique
JournalJapanese Journal of Applied Physics
AuthorsIshikawa, KatsuyaAuthor
Yoshida, MasakatsuAuthor
Inoue, MorioAuthor
Year1987 (July 20)Volume26
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.26.l1089Search in ResearchGate
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Mindat Ref. ID14989810Long-form Identifiermindat:1:5:14989810:4
GUID0
Full ReferenceIshikawa, Katsuya, Yoshida, Masakatsu, Inoue, Morio (1987) Secondary Defects of As+Implanted Silicon Measured by Thermal Wave Technique. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1089
Plain TextIshikawa, Katsuya, Yoshida, Masakatsu, Inoue, Morio (1987) Secondary Defects of As+Implanted Silicon Measured by Thermal Wave Technique. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1089
In(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics

See Also

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Ishikawa, Katsuya, Yoshida, Masakatsu, Inoue, Mono (1989) Depth profiles of secondary defects of As+ and BF2+ implanted silicon measured by a thermal wave technique. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 317-320 doi:10.1016/0168-583x(89)90194-8
Nakashima, Shin-ichi, Mizoguchi, Kohji, Inoue, Morio, Yoshida, Masakatsu, Ishikawa, Katsuya (1992) Characterization of Ion Implantation Dose by Raman Scattering and Photothermal Wave Techniques. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l1422
Fujita, Tetsuo, Fukui, Minoru, Itoh, Noriaki (1987) Electron Paramagnetic Resonance Studies of Defects in Silicon-Implanted SiO2. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1967
Hara, Tohru, Gelpey, Jeffrey C. (1987) Capless Rapid Thermal Annealing of Silicon Ion Implanted Gallium Arsenide. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l94
Fujita, Tetsuo, Saitoh, Yasunobu, Itoh, Noriaki, Mizuno, Bunji, Kubota, Masafumi (1987) Electron Paramagnetic Resonance Studies of Defects in Oxygen-Implanted Silicon. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1116
Uematsu, Masashi (1987) Electrical Characteristics of Focused-Be-Implanted GaAs Activated by Rapid Thermal Annealing. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l246
Chikaura, Yoshinori, Imai, Masato, Ishikawa, Tetsuya (1987) Observation of Microdefects in Thin Silicon Crystals by Means of Plane-Wave Topography Using Synchrotron X-Radiation. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l889
Uematsu, Masashi, Yanagawa, Fumihiko (1987) Compositional Disordering of Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1407
Suezawa, Masashi, Sumino, Koji (1987) Complexes of Nitrogen and Point Defects in Silicon. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l997
Uematsu, Masashi, Yanagawa, Fumihiko (1987) Compositional Disordering of Focused-Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l2101
Namura, Takashi, Ishikawa, Katsuya, Aoki, Norishige, Fukuzaki, Yoshiki, Todokoro, Yoshihiro, Inoue, Morio (1991) Evaluation of Device Charging in Ion Implantation. Japanese Journal of Applied Physics, 30. 3223-3227 doi:10.1143/jjap.30.3223
 
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