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Fujita, Tetsuo, Saitoh, Yasunobu, Itoh, Noriaki, Mizuno, Bunji, Kubota, Masafumi (1987) Electron Paramagnetic Resonance Studies of Defects in Oxygen-Implanted Silicon. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1116

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Reference TypeJournal (article/letter/editorial)
TitleElectron Paramagnetic Resonance Studies of Defects in Oxygen-Implanted Silicon
JournalJapanese Journal of Applied Physics
AuthorsFujita, TetsuoAuthor
Saitoh, YasunobuAuthor
Itoh, NoriakiAuthor
Mizuno, BunjiAuthor
Kubota, MasafumiAuthor
Year1987 (July 20)Volume26
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.26.l1116Search in ResearchGate
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Mindat Ref. ID14989820Long-form Identifiermindat:1:5:14989820:3
GUID0
Full ReferenceFujita, Tetsuo, Saitoh, Yasunobu, Itoh, Noriaki, Mizuno, Bunji, Kubota, Masafumi (1987) Electron Paramagnetic Resonance Studies of Defects in Oxygen-Implanted Silicon. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1116
Plain TextFujita, Tetsuo, Saitoh, Yasunobu, Itoh, Noriaki, Mizuno, Bunji, Kubota, Masafumi (1987) Electron Paramagnetic Resonance Studies of Defects in Oxygen-Implanted Silicon. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1116
In(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics

See Also

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Fujita, Tetsuo, Fukui, Minoru, Itoh, Noriaki (1987) Electron Paramagnetic Resonance Studies of Defects in Silicon-Implanted SiO2. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1967
Fujita, Tetsuo, Fukui, Minoru, Okada, Shunji, Shimizu, Tsutomu, Itoh, Noriaki (1989) Anomalous Defect Processes in Silicon-Implanted SiO2. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1254
Furuta, Hiroshi, Yamanaka, Chihiro, Ikeya, Motoji (1998) Degradation of Photoluminescence and Electron Paramagnetic Defects in Naturally Oxidized or Oxygen-Implanted Porous Silicon with Electron Spin Resonance Imaging. Japanese Journal of Applied Physics, 37. 6446-6450 doi:10.1143/jjap.37.6446
Ishikawa, Katsuya, Yoshida, Masakatsu, Inoue, Morio (1987) Secondary Defects of As+Implanted Silicon Measured by Thermal Wave Technique. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1089
Suezawa, Masashi, Sumino, Koji (1987) Complexes of Nitrogen and Point Defects in Silicon. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l997
Shimizu‐Iwayama, Tsutomu, Fujita, Katsunori, Nakao, Setsuo, Saitoh, Kazuo, Fujita, Tetsuo, Itoh, Noriaki (1994) Visible photoluminescence in Si+‐implanted silica glass. Journal of Applied Physics, 75 (12). 7779-7783 doi:10.1063/1.357031
Hara, Tohru, Gelpey, Jeffrey C. (1987) Capless Rapid Thermal Annealing of Silicon Ion Implanted Gallium Arsenide. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l94
Itoh, Sanae-Inoue, Itoh, Kimitaka (1987) Impurity Injection using Multiple-Shell Pellet. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1338
Nishida, Akihiko, Horai, Kazumi, Fujita, Tetsuo (1989) Effects of Oxygen Ion Implantation on the Conduction Electron Spin Resonance in Aluminum. Japanese Journal of Applied Physics, 28. 384-390 doi:10.1143/jjap.28.384
Miki, Toshikatsu, Ikeya, Motoji (1987) Electron Spin Resonance Microscopy by Localized Magnetic Field Modulation. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1495
Nakai, Izumi, Imai, Katsuhiro, Kawashima, Takuji, Yoshizaki, Ryozo (1987) Structure of the HighTcSuperconductor, Ba2LaCu3-xO7-y-Studies on La-Ba Ordering and Oxygen Defects. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1244
 
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