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Kitahara, Kuninori, Hoshino, Masataka, Ozeki, Masashi (1988) Observation of Donor-Related Deep Levels in GaxIn1-xP (0.52≤x≤0.71) Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l110

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Reference TypeJournal (article/letter/editorial)
TitleObservation of Donor-Related Deep Levels in GaxIn1-xP (0.52≤x≤0.71)
JournalJapanese Journal of Applied Physics
AuthorsKitahara, KuninoriAuthor
Hoshino, MasatakaAuthor
Ozeki, MasashiAuthor
Year1988 (January 20)Volume27
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.27.l110Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14992145Long-form Identifiermindat:1:5:14992145:1
GUID0
Full ReferenceKitahara, Kuninori, Hoshino, Masataka, Ozeki, Masashi (1988) Observation of Donor-Related Deep Levels in GaxIn1-xP (0.52≤x≤0.71) Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l110
Plain TextKitahara, Kuninori, Hoshino, Masataka, Ozeki, Masashi (1988) Observation of Donor-Related Deep Levels in GaxIn1-xP (0.52≤x≤0.71) Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l110
In(1988) Japanese Journal of Applied Physics Vol. 27. Japan Society of Applied Physics

See Also

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Kitahara, Kuninori, Hoshino, Masataka, Kodama, Kunihiko, Ozeki, Masashi (1986) Donor-Related Deep Level in S-Doped Ga0.52In0.48P Grwon by Chloride VPE. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l534
Kitahara, Kuninori, Hoshino, Masataka, Kodama, Kunihiko, Ozeki, Masashi (1986) Shallow and Deep Donor Levels in S-Doped Ga0.52In0.48P Grown by Chloride VPE. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l191
Kodama, Kunihiko, Hoshino, Masataka, Kitahara, Kuninori, Ozeki, Masashi (1986) Near-Band-Edge Photoluminescenee of High-Purity GaxIn1-xP Grown by Chloride Vapor-Phase Epitaxy. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l551
Kodama, Kunihiko, Hoshino, Masataka, Kitahara, Kuninori, Takikawa, Masahiko, Ozeki, Masashi (1986) Two-Dimensional Electron Gas at GaAs/Ga0.52In0.48P Heterointerface Grown by Chloride Vapor-Phase Epitaxy. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l127
Kitahara, Kuninori, Hoshino, Masataka, Kodama, Kunihiko, Ozeki, Masashi (1987) Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase Epitaxy. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1119
Kitahara, Kuninori, Nakai, Kenya, Ozeki, Masashi, Shibatomi, Akihiro, Dazai, Koichi (1976) Photo-Ionization Cross Section Measurements of Deep Levels in Iron Doped GaAs. Japanese Journal of Applied Physics, 15 (11) 2275-2276 doi:10.1143/jjap.15.2275
Kitahara, Kuninori, Ozeki, Masashi, Shibatomi, Akihiro (1984) Optical Observation of Inhomogeneity of Chromium-Doped Semi-Insulating GaAs. Japanese Journal of Applied Physics, 23. 207-211 doi:10.1143/jjap.23.207
Kitahara, Kuninori, Kodama, Kunihiko, Ozeki, Masashi (1985) Quantitative Analysis of In Density in Semi-Insulating GaAs by Photoluminescence. Japanese Journal of Applied Physics, 24. 1503-1505 doi:10.1143/jjap.24.1503
Kitahara, Kuninori, Ozeki, Masashi (1984) Nondestructive Resistivity Measurement of Semi-Insulating GaAs Using Illuminated n+-GaAs Contacts. Japanese Journal of Applied Physics, 23. 1655-1656 doi:10.1143/jjap.23.1655
Hoshino, Masataka, Kodama, Kunihiko, Kitahara, Kuninori, Ozeki, Masashi (1986) Chloride vapor phase epitaxial growth of high‐purity GaInP. Applied Physics Letters, 48 (12). 770-772 doi:10.1063/1.96716
Hoshino, Masataka, Komeno, Junji, Ozeki, Masashi (1984) Growth of InGaAsP Quaternary by Chloride VPE. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l928
 
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