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Watanabe, Satoru, Shigeno, Mayumi, Nakayama, Noriaki, Ito, Takashi (1991) Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water. Japanese Journal of Applied Physics, 30. 3575-3579 doi:10.1143/jjap.30.3575

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Reference TypeJournal (article/letter/editorial)
TitleSilicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water
JournalJapanese Journal of Applied Physics
AuthorsWatanabe, SatoruAuthor
Shigeno, MayumiAuthor
Nakayama, NoriakiAuthor
Ito, TakashiAuthor
Year1991 (December 30)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.3575Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14996402Long-form Identifiermindat:1:5:14996402:1
GUID0
Full ReferenceWatanabe, Satoru, Shigeno, Mayumi, Nakayama, Noriaki, Ito, Takashi (1991) Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water. Japanese Journal of Applied Physics, 30. 3575-3579 doi:10.1143/jjap.30.3575
Plain TextWatanabe, Satoru, Shigeno, Mayumi, Nakayama, Noriaki, Ito, Takashi (1991) Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water. Japanese Journal of Applied Physics, 30. 3575-3579 doi:10.1143/jjap.30.3575
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

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Nara, Yasuo, Sugita, Yoshihiro, Nakayama, Noriaki, Ito, Takashi (1991) Synchrotron Radiation-Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1753
Watanabe, Satoru, Nakayama, Noriaki, Ito, Takashi (1991) Homogeneous hydrogen‐terminated Si(111) surface formed using aqueous HF solution and water. Applied Physics Letters, 59 (12). 1458-1460 doi:10.1063/1.105287
Sugita, Yoshihiro, Nara, Yasuo, Nakayama, Noriaki, Ito, Takashi (1991) Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature. Japanese Journal of Applied Physics, 30. 3209-3214 doi:10.1143/jjap.30.3209
Watanabe, Satoru, Horiuchi, Kei, Ito, Takashi (1993) Atomic Step Structure on Vicinal H/Si(111) Surface Formed by Hot Water Immersion. Japanese Journal of Applied Physics, 32. 3420-3425 doi:10.1143/jjap.32.3420
Watanabe, Satoru, Shigeno, Mayumi (1992) Fluorine Adsorption and Etching on Si(111):SiH Surface during Immersion in HF Solution. Japanese Journal of Applied Physics, 31. 1702-1708 doi:10.1143/jjap.31.1702
Watanabe, Satoru, Sugino, Rinshi, Yamazaki, Tatsuya, Nara, Yasuo, Ito, Takashi (1989) Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality Silicon Epitaxy. Japanese Journal of Applied Physics, 28. 2167-2171 doi:10.1143/jjap.28.2167
Nakamura, Masakazu, Takahagi, Takayuki, Ishitani, Akira (1993) Fluorine Termination of Silicon Surface by F2and Succeeding Reaction with Water. Japanese Journal of Applied Physics, 32. 3125-3130 doi:10.1143/jjap.32.3125
Mizuta, Naomi, Watanabe, Satoru (2006) Chemical Structure of Nitrogen Atoms in Thin-Film Nitrided Silicon Dioxide Formed on Silicon Substrate after Hydrogenation Reaction in Hydrofluoric Acid. Japanese Journal of Applied Physics, 45 (4) 2408-2411 doi:10.1143/jjap.45.2408
Mori, Toshiki, Watanabe, Satoru (2005) Large Desorption Yield of Hydrogen Atoms from Silicon Surface in Homogeneous Electron Injection. Japanese Journal of Applied Physics, 44. doi:10.1143/jjap.44.l839
Imai, Shigeru, Takagi, Satoru, Sugiura, Osamu, Matsumura, Masakiyo (1991) A Novel Atomic Layer Epitaxy Method of Silicon. Japanese Journal of Applied Physics, 30. 3646-3651 doi:10.1143/jjap.30.3646
Hiramatsu, Masato, Kamimura, Takaaki, Nakajima, Mitsuo, Ito, Hiroshi (1991) Influence of Nitrogen Incorporation in Hydrogenated Amorphous Silicon Films Prepared by Photochemical Vapor Deposition. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l7
 
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