Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Nara, Yasuo, Sugita, Yoshihiro, Nakayama, Noriaki, Ito, Takashi (1991) Synchrotron Radiation-Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1753

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleSynchrotron Radiation-Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface
JournalJapanese Journal of Applied Physics
AuthorsNara, YasuoAuthor
Sugita, YoshihiroAuthor
Nakayama, NoriakiAuthor
Ito, TakashiAuthor
Year1991 (October 1)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1753Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14996885Long-form Identifiermindat:1:5:14996885:2
GUID0
Full ReferenceNara, Yasuo, Sugita, Yoshihiro, Nakayama, Noriaki, Ito, Takashi (1991) Synchrotron Radiation-Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1753
Plain TextNara, Yasuo, Sugita, Yoshihiro, Nakayama, Noriaki, Ito, Takashi (1991) Synchrotron Radiation-Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1753
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Sugita, Yoshihiro, Nara, Yasuo, Nakayama, Noriaki, Ito, Takashi (1991) Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature. Japanese Journal of Applied Physics, 30. 3209-3214 doi:10.1143/jjap.30.3209
Nara, Yasuo, Sugita, Yoshihiro, Horiuchi, Kei, Ito, Takashi (1992) Synchrotron Radiation-Assisted Silicon Film Growth by Irradiation Parallel to the Substrate. Japanese Journal of Applied Physics, 31. 2333-2337 doi:10.1143/jjap.31.2333
Nara, Yasuo, Moscheni, Fabrice, Sugita, Yoshihiro, Horiuchi, Kei, Ito, Takashi (1992) Evaluation of Photoemitted Current from SiO2Film on Silicon During Synchrotron Radiation Irradiation. Japanese Journal of Applied Physics, 31. 4454-4458 doi:10.1143/jjap.31.4454
Watanabe, Satoru, Shigeno, Mayumi, Nakayama, Noriaki, Ito, Takashi (1991) Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water. Japanese Journal of Applied Physics, 30. 3575-3579 doi:10.1143/jjap.30.3575
Nara, Yasuo, Sugita, Yoshihiro, Horiuchi, Kei, Ito, Takashi (1992) Synchrotron radiation‐assisted silicon homoepitaxy at 100 °C using Si2H6/H2mixture. Applied Physics Letters, 61 (1). 93-95 doi:10.1063/1.107624
Nakajima, Anri, Nara, Yasuo, Sugita, Yoshihiro, Itakura, Toru, Nakayama, Noriaki (1993) Quantum-Size Effect from Photoluminescence of Low-Temperature-Oxidized Porous Si. Japanese Journal of Applied Physics, 32. 415-418 doi:10.1143/jjap.32.415
Fukuroda, Atsushi, Sugii, Toshihiro, Arimoto, Yoshihiro, Ito, Takashi (1991) Si Wafer Bonding with Ta Silicide Formation. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1693
Saito, Yoji, Imai, Hideo, Sugita, Yoshihiro, Ito, Takashi (1996) Recrystallization of Arsenic Implanted Layer in Silicon by Vacuum-Ultraviolet-Light Irradiation. Japanese Journal of Applied Physics, 35. 6239-6240 doi:10.1143/jjap.35.6239
Sugimoto, Fumitoshi, Horie, Hiroshi, Arimoto, Yoshihiro, Ito, Takashi (1995) A pH-Controlled Chemical Mechanical Polishing Method for Thin Bonded Silicon-on-Insulator Wafers. Japanese Journal of Applied Physics, 34. 30-35 doi:10.1143/jjap.34.30
Watanabe, Satoru, Sugino, Rinshi, Yamazaki, Tatsuya, Nara, Yasuo, Ito, Takashi (1989) Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality Silicon Epitaxy. Japanese Journal of Applied Physics, 28. 2167-2171 doi:10.1143/jjap.28.2167
Saito, Yoji, Imai, Hideo, Sugita, Yoshihiro, Ito, Takashi (1995) Effects of Vacuum-Ultraviolet-Light-Induced Surface Reaction on Selective and Anisotropic Etching of Silicon Dioxide Using Anhydrous Hydrogen Fluoride Gas. Japanese Journal of Applied Physics, 34. 6882-6885 doi:10.1143/jjap.34.6882
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 29, 2025 20:53:12
Go to top of page