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Fukuroda, Atsushi, Sugii, Toshihiro, Arimoto, Yoshihiro, Ito, Takashi (1991) Si Wafer Bonding with Ta Silicide Formation. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1693

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Reference TypeJournal (article/letter/editorial)
TitleSi Wafer Bonding with Ta Silicide Formation
JournalJapanese Journal of Applied Physics
AuthorsFukuroda, AtsushiAuthor
Sugii, ToshihiroAuthor
Arimoto, YoshihiroAuthor
Ito, TakashiAuthor
Year1991 (October 1)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1693Search in ResearchGate
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Mindat Ref. ID14996864Long-form Identifiermindat:1:5:14996864:7
GUID0
Full ReferenceFukuroda, Atsushi, Sugii, Toshihiro, Arimoto, Yoshihiro, Ito, Takashi (1991) Si Wafer Bonding with Ta Silicide Formation. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1693
Plain TextFukuroda, Atsushi, Sugii, Toshihiro, Arimoto, Yoshihiro, Ito, Takashi (1991) Si Wafer Bonding with Ta Silicide Formation. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1693
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

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Sugii, Toshihiro, Kojima, Manabu, Fukuroda, Atsushi, Fukano, Tetsu, Arimoto, Yoshihiro (1991) A New SOI-Lateral Bipolar Transistor for High-Speed Operation. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l2080
Sugii, Toshihiro, Yamazaki, Tatsuya, Ito, Takashi (1991) Achieving High Current Gain and Low Emitter Resistance with the SiCx:F Widegap Emitter. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l970
Hibino, Hiroki, Shinoda, Yukinobu, Kobayashi, Yoshihiro, Sugii, Kiyomasa (1991) Reflection High-Energy Electron Diffraction Studies of Vicinal Si(111) Surfaces. Japanese Journal of Applied Physics, 30. 1337-1342 doi:10.1143/jjap.30.1337
Arimoto, Yoshihiro, Sugimoto, Fumitoshi (1992) Pulse-Field-Assisted Wafer Bonding for Silicon on Insulator. Japanese Journal of Applied Physics, 31. 1709-1715 doi:10.1143/jjap.31.1709
Sugimoto, Fumitoshi, Horie, Hiroshi, Arimoto, Yoshihiro, Ito, Takashi (1995) A pH-Controlled Chemical Mechanical Polishing Method for Thin Bonded Silicon-on-Insulator Wafers. Japanese Journal of Applied Physics, 34. 30-35 doi:10.1143/jjap.34.30
Nara, Yasuo, Sugita, Yoshihiro, Nakayama, Noriaki, Ito, Takashi (1991) Synchrotron Radiation-Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1753
Imai, Kazuo (1991) A New Thinning Method for Obtaining Less than 100-nm-Thick Si Film on Wafer Bonding. Japanese Journal of Applied Physics, 30. 1154-1157 doi:10.1143/jjap.30.1154
Sugita, Yoshihiro, Nara, Yasuo, Nakayama, Noriaki, Ito, Takashi (1991) Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature. Japanese Journal of Applied Physics, 30. 3209-3214 doi:10.1143/jjap.30.3209
Ishiwara, Hiroshi, Jyokyu, Katsuyoshi (1991) Formation of Conductive SrVO3Films on Si Substrates. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l2059
Sugiyama, Yoshihiro, Tackeuchi, Atsushi, Inata, Tsuguo, Muto, Sunichi (1991) Temperature Dependence of Photoluminescence Decay Time in Tunneling Bi-Quantum-Well Structures. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1454
Sugimoto, Fumitoshi, Arimoto, Yoshihiro, Ito, Takashi (1995) Simultaneous Temperature Measurement of Wafers in Chemical Mechanical Polishing of Silicon Dioxide Layer. Japanese Journal of Applied Physics, 34. 6314-6320 doi:10.1143/jjap.34.6314
 
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