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Wada, Morio, Sakakibara, Katsutoshi, Higuchi, Masahiko, Sekiguchi, Yoichi, Iwaoka, Hideto (1991) Wide-Wavelength GaInAs PIN Photodiodes Using a Lattice-Mismatched Light-Absorbing Layer and a Thin InP Cap Layer. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1501

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Reference TypeJournal (article/letter/editorial)
TitleWide-Wavelength GaInAs PIN Photodiodes Using a Lattice-Mismatched Light-Absorbing Layer and a Thin InP Cap Layer
JournalJapanese Journal of Applied Physics
AuthorsWada, MorioAuthor
Sakakibara, KatsutoshiAuthor
Higuchi, MasahikoAuthor
Sekiguchi, YoichiAuthor
Iwaoka, HidetoAuthor
Year1991 (August 15)Volume30
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.30.l1501Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14996801Long-form Identifiermindat:1:5:14996801:2
GUID0
Full ReferenceWada, Morio, Sakakibara, Katsutoshi, Higuchi, Masahiko, Sekiguchi, Yoichi, Iwaoka, Hideto (1991) Wide-Wavelength GaInAs PIN Photodiodes Using a Lattice-Mismatched Light-Absorbing Layer and a Thin InP Cap Layer. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1501
Plain TextWada, Morio, Sakakibara, Katsutoshi, Higuchi, Masahiko, Sekiguchi, Yoichi, Iwaoka, Hideto (1991) Wide-Wavelength GaInAs PIN Photodiodes Using a Lattice-Mismatched Light-Absorbing Layer and a Thin InP Cap Layer. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1501
In(1991) Japanese Journal of Applied Physics Vol. 30. Japan Society of Applied Physics

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Wada, Morio, Seko, Mashahito, Sakakibara, Katsutoshi, Sekiguchi, Yoichi (1990) GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn Diffusion Technique. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l401
Sakakibara, Katsutoshi, Wada, Morio, Sekiguchi, Yoichi (1992) High-Speed GaInAs PIN Photodiodes with Low Series Resistance. Japanese Journal of Applied Physics, 31. 1807-1809 doi:10.1143/jjap.31.1807
Wada, Morio, Sakakibara, Katsutoshi, Higuchi, Masahiko, Sekiguchi, Yoichi (1992) Evaluation of Surface Zn Concentration in Zn Diffusion into InP. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l597
Wada, Morio, Sakakibara, Katsutoshi, Sekiguchi, Yoichi (1991) Effects of Phosphorus Pressure on Low-Energy Emission Bands in Zn-Diffused InP. Japanese Journal of Applied Physics, 30. 2683-2692 doi:10.1143/jjap.30.2683
Wada, Morio, Seko, Masahito, Sakakibara, Katsutoshi, Sekiguchi, Yoichi (1990) Incorporation of Arsenic and Gallium in InP Layers in GaInAs/InP Heterostructures Grown by MOVPE. Japanese Journal of Applied Physics, 29. 2342-2350 doi:10.1143/jjap.29.2342
Wada, Morio, Seko, Masahito, Sakakibara, Katsutoshi, Sekiguchi, Yoichi (1989) Zn Diffusion into InP Using Dimethylzinc as a Zn Source. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1700
Inoue, Takeshi, Nakajima, Shin-ichi, Luo, Yi, Oki, Tokukoh, Iwaoka, Hideto, Nakano, Yoshiaki, Tada, Kunio (1991) InGaAs/InP Gain-Coupled Distributed Feedback Laser with a Corrugated Active Layer. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1808
Wada, Morio, Sakakibara, Katsutoshi (1993) Photoluminescence and Photoemission Studies of Defects in InP Induced by Zn Diffusion. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l469
Uchida, Toshi K., Uchida, Takashi, Yokouchi, Noriyuki, Koyama, Fumio, Iga, Kenichi (1991) GaInAs/InP Quantum Wells and Strained-Layer Superlattices Grown by Chemical Beam Epitaxy. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l228
Miyamoto, Hiroshi, Ohta, Hiroshi, Tabuse, Kazuhiko, Iwaoka, Hideto, Miyagawa, Yoshihide (1991) A Broad-Band Traveling-Wave Ti:LiNbO3Optical Phase Modulator. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l383
Okamoto, Shinji, Nakazawa, Eiichiro, Suzuki, Takeo (1991) Thin-Film Cold Cathode Using ZnS Layer. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1321
 
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