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Wada, Morio, Sakakibara, Katsutoshi, Higuchi, Masahiko, Sekiguchi, Yoichi (1992) Evaluation of Surface Zn Concentration in Zn Diffusion into InP. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l597

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Reference TypeJournal (article/letter/editorial)
TitleEvaluation of Surface Zn Concentration in Zn Diffusion into InP
JournalJapanese Journal of Applied Physics
AuthorsWada, MorioAuthor
Sakakibara, KatsutoshiAuthor
Higuchi, MasahikoAuthor
Sekiguchi, YoichiAuthor
Year1992 (May 15)Volume31
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.31.l597Search in ResearchGate
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Mindat Ref. ID14998707Long-form Identifiermindat:1:5:14998707:5
GUID0
Full ReferenceWada, Morio, Sakakibara, Katsutoshi, Higuchi, Masahiko, Sekiguchi, Yoichi (1992) Evaluation of Surface Zn Concentration in Zn Diffusion into InP. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l597
Plain TextWada, Morio, Sakakibara, Katsutoshi, Higuchi, Masahiko, Sekiguchi, Yoichi (1992) Evaluation of Surface Zn Concentration in Zn Diffusion into InP. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l597
In(1992) Japanese Journal of Applied Physics Vol. 31. Japan Society of Applied Physics

See Also

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Wada, Morio, Seko, Masahito, Sakakibara, Katsutoshi, Sekiguchi, Yoichi (1989) Zn Diffusion into InP Using Dimethylzinc as a Zn Source. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1700
Wada, Morio, Seko, Mashahito, Sakakibara, Katsutoshi, Sekiguchi, Yoichi (1990) GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn Diffusion Technique. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l401
Wada, Morio, Sakakibara, Katsutoshi, Sekiguchi, Yoichi (1991) Effects of Phosphorus Pressure on Low-Energy Emission Bands in Zn-Diffused InP. Japanese Journal of Applied Physics, 30. 2683-2692 doi:10.1143/jjap.30.2683
Sakakibara, Katsutoshi, Wada, Morio, Sekiguchi, Yoichi (1992) High-Speed GaInAs PIN Photodiodes with Low Series Resistance. Japanese Journal of Applied Physics, 31. 1807-1809 doi:10.1143/jjap.31.1807
Wada, Morio, Sakakibara, Katsutoshi (1993) Photoluminescence and Photoemission Studies of Defects in InP Induced by Zn Diffusion. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l469
Wada, Morio, Sakakibara, Katsutoshi, Higuchi, Masahiko, Sekiguchi, Yoichi, Iwaoka, Hideto (1991) Wide-Wavelength GaInAs PIN Photodiodes Using a Lattice-Mismatched Light-Absorbing Layer and a Thin InP Cap Layer. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1501
Wada, Morio, Seko, Masahito, Sakakibara, Katsutoshi, Sekiguchi, Yoichi (1990) Incorporation of Arsenic and Gallium in InP Layers in GaInAs/InP Heterostructures Grown by MOVPE. Japanese Journal of Applied Physics, 29. 2342-2350 doi:10.1143/jjap.29.2342
Wada, M., Sakakibara, K., Higuchi, M., Sekiguchi, Y. (1991) Investigation of Zn diffusion in InP using dimethylzinc as Zn source. Journal of Crystal Growth, 114 (3). 321-326 doi:10.1016/0022-0248(91)90048-a
Matsumoto, Yoshishige (1983) Diffusion of Cd and Zn into InP and InGaAsP (Eg=0.95-1.35 eV) Japanese Journal of Applied Physics, 22. 1699-1704 doi:10.1143/jjap.22.1699
Kikuma, Isao, Matsuo, Masatoshi, Komuro, Toyokazu (1992) In SituAnnealing of Melt-Grown ZnSe Crystals under Zn Partial Pressure. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l531
Kubota, Shinichi, Koyama, Fumio, Iga, Kenichi (1992) Low-Threshold GaInAsP/InP Transmission-Type Surface Emitting Laser. Japanese Journal of Applied Physics, 31. doi:10.1143/jjap.31.l175
 
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